DE2103573A1 - Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik - Google Patents

Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik

Info

Publication number
DE2103573A1
DE2103573A1 DE19712103573 DE2103573A DE2103573A1 DE 2103573 A1 DE2103573 A1 DE 2103573A1 DE 19712103573 DE19712103573 DE 19712103573 DE 2103573 A DE2103573 A DE 2103573A DE 2103573 A1 DE2103573 A1 DE 2103573A1
Authority
DE
Germany
Prior art keywords
semiconductor component
integrated semiconductor
component according
integrated
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712103573
Other languages
German (de)
English (en)
Inventor
Karl Dr.-Ing. 8000 München. P Goser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19712103573 priority Critical patent/DE2103573A1/de
Priority to FR7201674A priority patent/FR2123337A1/fr
Priority to GB291172A priority patent/GB1358795A/en
Priority to IT19658/72A priority patent/IT946799B/it
Priority to LU64648D priority patent/LU64648A1/xx
Priority to BE778529A priority patent/BE778529A/xx
Priority to NL7201066A priority patent/NL7201066A/xx
Publication of DE2103573A1 publication Critical patent/DE2103573A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE19712103573 1971-01-26 1971-01-26 Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik Pending DE2103573A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE19712103573 DE2103573A1 (de) 1971-01-26 1971-01-26 Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik
FR7201674A FR2123337A1 (enExample) 1971-01-26 1972-01-19
GB291172A GB1358795A (en) 1971-01-26 1972-01-21 Integrated circuits
IT19658/72A IT946799B (it) 1971-01-26 1972-01-21 Componente a semiconduttori inte grato specie elemento memorizza tore a basse perdite realizzato con la tecnica del canale com plementare
LU64648D LU64648A1 (enExample) 1971-01-26 1972-01-24
BE778529A BE778529A (fr) 1971-01-26 1972-01-26 Composant integre a semiconducteur, notamment element de memoire a faibles pertes, realise suivant la technique a canaux complementaires
NL7201066A NL7201066A (enExample) 1971-01-26 1972-01-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712103573 DE2103573A1 (de) 1971-01-26 1971-01-26 Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik

Publications (1)

Publication Number Publication Date
DE2103573A1 true DE2103573A1 (de) 1972-08-03

Family

ID=5796939

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712103573 Pending DE2103573A1 (de) 1971-01-26 1971-01-26 Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik

Country Status (7)

Country Link
BE (1) BE778529A (enExample)
DE (1) DE2103573A1 (enExample)
FR (1) FR2123337A1 (enExample)
GB (1) GB1358795A (enExample)
IT (1) IT946799B (enExample)
LU (1) LU64648A1 (enExample)
NL (1) NL7201066A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3530897A1 (de) * 1984-08-31 1986-03-13 Hitachi, Ltd., Tokio/Tokyo Integrierte halbleiterschaltung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4653026A (en) * 1981-08-12 1987-03-24 Hitachi, Ltd. Nonvolatile memory device or a single crystal silicon film
JPS58186961A (ja) * 1982-04-26 1983-11-01 Toshiba Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3530897A1 (de) * 1984-08-31 1986-03-13 Hitachi, Ltd., Tokio/Tokyo Integrierte halbleiterschaltung

Also Published As

Publication number Publication date
FR2123337A1 (enExample) 1972-09-08
IT946799B (it) 1973-05-21
LU64648A1 (enExample) 1972-06-26
GB1358795A (en) 1974-07-03
BE778529A (fr) 1972-05-16
NL7201066A (enExample) 1972-07-28

Similar Documents

Publication Publication Date Title
DE2143029B2 (de) Integrierte halbleiterschutzanordnung fuer zwei komplementaere isolierschicht-feldeffekttransistoren
DE1234856B (de) Festkoerper-Kippschaltung
DE2554296A1 (de) Integrierte schaltung mit komplementaeren feldeffekttransistoren
DE1246807B (de) Schaltungsanordnung zur Durchfuehrung der logischen Funktionen EXCLUSIV-ODER und EXCLUSIV-NICHTODER
DE2338239A1 (de) Integrierte halbleiterschaltung
DE69803073T2 (de) Elektronischer analogschalter
DE2504088A1 (de) Ladungsgekoppelte anordnung
DE69421119T2 (de) Thyristor mit isolierten Gate und Methode, derselben zu Betreiben
DE3743930A1 (de) Integrierte schaltung mit "latch-up"-schutzschaltung in komplementaerer mos-schaltungstechnik
DE69715368T2 (de) Normal leitender dual-thyristor
DE2103573A1 (de) Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik
EP0135136A2 (de) Integrierte RS-Flipflop-Schaltung
DE2552849C3 (de) Logische Schaltung
WO1989006047A1 (fr) Circuit integre a circuit de protection anti-''latch-up'' realise selon la technique des circuits cmos
DE2800924C2 (de) Logische integrierte Schaltung
DE2017172C3 (de) Halbleiteranordnung, die eine Passivierungsschicht an der Halbleiteroberfläche aufweist
DE3429577A1 (de) Feldeffekt-festkoerperbauelement
DE2451364A1 (de) Digitalsteuerbarer kondensator
DE2953403C2 (de) Hochleistungs-Schalter unter Verwendung eines torgesteuerten Diodenschalters
DE2029058A1 (de) Halbleiteranordnung mit einem Feld effekttransistor mit isolierter Torelek trode
DE2216060A1 (de) Ladungsgekoppelte Baueinheit mit tiefgelegtem Kanal
DE68907368T2 (de) Integrierte Schaltung mit komplementären MOS-Transistoren.
DE2430947C2 (de) Halbleiterspeichereinheit
DE69030074T2 (de) Supraleitender Gatter-Feld-Effekt-Transistor
EP0135139A2 (de) Integrierte JK-Flipflop-Schaltung