IT946799B - Componente a semiconduttori inte grato specie elemento memorizza tore a basse perdite realizzato con la tecnica del canale com plementare - Google Patents

Componente a semiconduttori inte grato specie elemento memorizza tore a basse perdite realizzato con la tecnica del canale com plementare

Info

Publication number
IT946799B
IT946799B IT19658/72A IT1965872A IT946799B IT 946799 B IT946799 B IT 946799B IT 19658/72 A IT19658/72 A IT 19658/72A IT 1965872 A IT1965872 A IT 1965872A IT 946799 B IT946799 B IT 946799B
Authority
IT
Italy
Prior art keywords
channel
technique
component
semiconductor integrated
low loss
Prior art date
Application number
IT19658/72A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT946799B publication Critical patent/IT946799B/it

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85Complementary IGFETs, e.g. CMOS
    • H10D84/856Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT19658/72A 1971-01-26 1972-01-21 Componente a semiconduttori inte grato specie elemento memorizza tore a basse perdite realizzato con la tecnica del canale com plementare IT946799B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712103573 DE2103573A1 (de) 1971-01-26 1971-01-26 Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik

Publications (1)

Publication Number Publication Date
IT946799B true IT946799B (it) 1973-05-21

Family

ID=5796939

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19658/72A IT946799B (it) 1971-01-26 1972-01-21 Componente a semiconduttori inte grato specie elemento memorizza tore a basse perdite realizzato con la tecnica del canale com plementare

Country Status (7)

Country Link
BE (1) BE778529A (enExample)
DE (1) DE2103573A1 (enExample)
FR (1) FR2123337A1 (enExample)
GB (1) GB1358795A (enExample)
IT (1) IT946799B (enExample)
LU (1) LU64648A1 (enExample)
NL (1) NL7201066A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4653026A (en) * 1981-08-12 1987-03-24 Hitachi, Ltd. Nonvolatile memory device or a single crystal silicon film
JPS58186961A (ja) * 1982-04-26 1983-11-01 Toshiba Corp 半導体装置
KR940002772B1 (ko) * 1984-08-31 1994-04-02 가부시기가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치 및 그 제조방법

Also Published As

Publication number Publication date
FR2123337A1 (enExample) 1972-09-08
LU64648A1 (enExample) 1972-06-26
GB1358795A (en) 1974-07-03
BE778529A (fr) 1972-05-16
DE2103573A1 (de) 1972-08-03
NL7201066A (enExample) 1972-07-28

Similar Documents

Publication Publication Date Title
SE381535B (sv) Halvledarstruktur och forfarande for dess framstellning
AT361042B (de) Integrierte halbleiterschaltung
IT964778B (it) Elemento di memoria a semicondut tore
IT1001601B (it) Circuito logico integrato perfezio nato
IT948659B (it) Circuito integrato bistabile
IT963413B (it) Procedimento di fotoincisione particolarmente per la fabbrica zione di circuiti integrati
IT946799B (it) Componente a semiconduttori inte grato specie elemento memorizza tore a basse perdite realizzato con la tecnica del canale com plementare
CH520403A (de) Halbleiterbauelement mit Druckkontakten
IT982341B (it) Componente a semiconduttori
CH526859A (de) Bistabiles Halbleiterbauelement
FI56289C (fi) Funktionsoevervakat informationsminne speciellt integrerat halvledarminne
DK145780C (da) Fremgangsmaade til udvinding af d-penicillamin
IT949867B (it) Circuito di soglia di tipo integrato
BR7203959D0 (pt) Um dispositivo semicondutor
IT967738B (it) Circuito a semiconduttori integrato
CH538621A (de) Absaugventil
CH430362A (de) Hochvakuumventil
IT970856B (it) Componente a semiconduttore
IT940035B (it) Circuito a transistore particolar mente del tipo integrat
IT975824B (it) Procedimento per al fabbricazione di dispositivi semiconduttori ottenuti col procedimento
SE383582B (sv) Halvledaranordning och sett for dess framstellning
CH533362A (de) Halbleiterbauelement
IT945066B (it) Metodo per collegare un semicondut tore con un sostrato e circuito risultante
BE789788A (fr) Module de fabrication
SE391901B (sv) Flerkkretsskyddsventil