BE778529A - Composant integre a semiconducteur, notamment element de memoire a faibles pertes, realise suivant la technique a canaux complementaires - Google Patents
Composant integre a semiconducteur, notamment element de memoire a faibles pertes, realise suivant la technique a canaux complementairesInfo
- Publication number
- BE778529A BE778529A BE778529A BE778529A BE778529A BE 778529 A BE778529 A BE 778529A BE 778529 A BE778529 A BE 778529A BE 778529 A BE778529 A BE 778529A BE 778529 A BE778529 A BE 778529A
- Authority
- BE
- Belgium
- Prior art keywords
- memory element
- semiconductor component
- integrated semiconductor
- especially low
- made following
- Prior art date
Links
- 230000000295 complement effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712103573 DE2103573A1 (de) | 1971-01-26 | 1971-01-26 | Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE778529A true BE778529A (fr) | 1972-05-16 |
Family
ID=5796939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE778529A BE778529A (fr) | 1971-01-26 | 1972-01-26 | Composant integre a semiconducteur, notamment element de memoire a faibles pertes, realise suivant la technique a canaux complementaires |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE778529A (enExample) |
| DE (1) | DE2103573A1 (enExample) |
| FR (1) | FR2123337A1 (enExample) |
| GB (1) | GB1358795A (enExample) |
| IT (1) | IT946799B (enExample) |
| LU (1) | LU64648A1 (enExample) |
| NL (1) | NL7201066A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4653026A (en) * | 1981-08-12 | 1987-03-24 | Hitachi, Ltd. | Nonvolatile memory device or a single crystal silicon film |
| JPS58186961A (ja) * | 1982-04-26 | 1983-11-01 | Toshiba Corp | 半導体装置 |
| KR940002772B1 (ko) * | 1984-08-31 | 1994-04-02 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 집적회로 장치 및 그 제조방법 |
-
1971
- 1971-01-26 DE DE19712103573 patent/DE2103573A1/de active Pending
-
1972
- 1972-01-19 FR FR7201674A patent/FR2123337A1/fr not_active Withdrawn
- 1972-01-21 GB GB291172A patent/GB1358795A/en not_active Expired
- 1972-01-21 IT IT19658/72A patent/IT946799B/it active
- 1972-01-24 LU LU64648D patent/LU64648A1/xx unknown
- 1972-01-26 NL NL7201066A patent/NL7201066A/xx unknown
- 1972-01-26 BE BE778529A patent/BE778529A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2123337A1 (enExample) | 1972-09-08 |
| IT946799B (it) | 1973-05-21 |
| LU64648A1 (enExample) | 1972-06-26 |
| GB1358795A (en) | 1974-07-03 |
| DE2103573A1 (de) | 1972-08-03 |
| NL7201066A (enExample) | 1972-07-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL188608C (nl) | Geintegreerde halfgeleiderschakeling. | |
| NL159822B (nl) | Halfgeleiderinrichting. | |
| NL153362B (nl) | Spoelkokersamenstel. | |
| ES205712Y (es) | Un perno. | |
| NL161923C (nl) | Halfgeleiderinrichting. | |
| CH554600A (de) | Halbleiterbauelement. | |
| NL7312547A (nl) | Halfgeleiderinrichting, werkwijze ter vervaardiging daarvan en schakeling bevattende de inrichting. | |
| CH546482A (de) | Halbleiterbauelement. | |
| CH501980A (de) | Monolithische, integrierte Halbleiteranordnung | |
| NL154866B (nl) | Werkwijze voor het vervaardigen van een halfgeleiderinrichting alsmede halfgeleiderinrichting, vervaardigd volgens de werkwijze. | |
| NO140055C (no) | Fremgangsmaate for fremstilling av urea. | |
| NL176405C (nl) | Geintegreerde halfgeleidergeheugeninrichting. | |
| ES176807Y (es) | Elemento de construccion semiconductor. | |
| BE778529A (fr) | Composant integre a semiconducteur, notamment element de memoire a faibles pertes, realise suivant la technique a canaux complementaires | |
| NL171753C (nl) | Geintegreerd halfgeleidergeheugen. | |
| NL169803C (nl) | Geintegreerde halfgeleiderschakeling. | |
| CH549286A (de) | Halbleiterbauelement. | |
| FI56289B (fi) | Funktionsoevervakat informationsminne, speciellt integrerat halvledarminne | |
| AT316652B (de) | Stabilisiertes Halbleiterbauelement | |
| BE817065A (fr) | Composant semi-conducteur | |
| NL184814C (nl) | Geintegreerde halfgeleiderschakeling. | |
| NL161550C (nl) | Verbindingselement. | |
| NL154620B (nl) | Geintegreerde halfgeleiderschakeling. | |
| DK131066B (da) | Primært, alkalisk element. | |
| AU4108868A (en) | Securing self rimming sinks drainers, basins or troughs |