DE2103276C3 - Dynamisches Schieberegister - Google Patents
Dynamisches SchieberegisterInfo
- Publication number
- DE2103276C3 DE2103276C3 DE2103276A DE2103276A DE2103276C3 DE 2103276 C3 DE2103276 C3 DE 2103276C3 DE 2103276 A DE2103276 A DE 2103276A DE 2103276 A DE2103276 A DE 2103276A DE 2103276 C3 DE2103276 C3 DE 2103276C3
- Authority
- DE
- Germany
- Prior art keywords
- cell
- sub
- shift
- clock
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
- G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Shift Register Type Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US649870A | 1970-01-28 | 1970-01-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2103276A1 DE2103276A1 (de) | 1971-08-05 |
| DE2103276B2 DE2103276B2 (de) | 1977-04-28 |
| DE2103276C3 true DE2103276C3 (de) | 1981-05-21 |
Family
ID=21721176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2103276A Expired DE2103276C3 (de) | 1970-01-28 | 1971-01-25 | Dynamisches Schieberegister |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3621279A (enExample) |
| DE (1) | DE2103276C3 (enExample) |
| FR (1) | FR2077369B1 (enExample) |
| GB (1) | GB1322851A (enExample) |
| NL (1) | NL7017917A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3921194A (en) * | 1970-07-20 | 1975-11-18 | Gen Electric | Method and apparatus for storing and transferring information |
| US3921195A (en) * | 1970-10-29 | 1975-11-18 | Bell Telephone Labor Inc | Two and four phase charge coupled devices |
| US4646119A (en) * | 1971-01-14 | 1987-02-24 | Rca Corporation | Charge coupled circuits |
| US3747064A (en) * | 1971-06-30 | 1973-07-17 | Ibm | Fet dynamic logic circuit and layout |
| NL165870C (nl) * | 1971-09-16 | 1981-05-15 | Philips Nv | Analoog schuifregister. |
| DE2558287C2 (de) * | 1974-12-23 | 1983-07-28 | Casio Computer Co., Ltd., Tokyo | Informationsspeicher |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3322974A (en) * | 1966-03-14 | 1967-05-30 | Rca Corp | Flip-flop adaptable for counter comprising inverters and inhibitable gates and in cooperation with overlapping clocks for temporarily maintaining complementary outputs at same digital level |
| US3506851A (en) * | 1966-12-14 | 1970-04-14 | North American Rockwell | Field effect transistor driver using capacitor feedback |
| US3524077A (en) * | 1968-02-28 | 1970-08-11 | Rca Corp | Translating information with multi-phase clock signals |
-
1970
- 1970-01-28 US US6498A patent/US3621279A/en not_active Expired - Lifetime
- 1970-12-09 NL NL7017917A patent/NL7017917A/xx unknown
- 1970-12-17 FR FR7047134A patent/FR2077369B1/fr not_active Expired
-
1971
- 1971-01-14 GB GB179071A patent/GB1322851A/en not_active Expired
- 1971-01-25 DE DE2103276A patent/DE2103276C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2077369B1 (enExample) | 1974-09-20 |
| NL7017917A (enExample) | 1971-07-30 |
| FR2077369A1 (enExample) | 1971-10-22 |
| DE2103276A1 (de) | 1971-08-05 |
| DE2103276B2 (de) | 1977-04-28 |
| GB1322851A (en) | 1973-07-11 |
| US3621279A (en) | 1971-11-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |