DE2050320A1 - Halbleiteranordnung - Google Patents
HalbleiteranordnungInfo
- Publication number
- DE2050320A1 DE2050320A1 DE19702050320 DE2050320A DE2050320A1 DE 2050320 A1 DE2050320 A1 DE 2050320A1 DE 19702050320 DE19702050320 DE 19702050320 DE 2050320 A DE2050320 A DE 2050320A DE 2050320 A1 DE2050320 A1 DE 2050320A1
- Authority
- DE
- Germany
- Prior art keywords
- control electrode
- semiconductor
- different
- semiconductor body
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 239000000463 material Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702050320 DE2050320A1 (de) | 1970-10-13 | 1970-10-13 | Halbleiteranordnung |
| NL7113931A NL7113931A (xx) | 1970-10-13 | 1971-10-11 | |
| FR7136661A FR2110392B1 (xx) | 1970-10-13 | 1971-10-12 | |
| GB4772771A GB1352202A (en) | 1970-10-13 | 1971-10-13 | Semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702050320 DE2050320A1 (de) | 1970-10-13 | 1970-10-13 | Halbleiteranordnung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2050320A1 true DE2050320A1 (de) | 1972-04-20 |
Family
ID=5785031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702050320 Pending DE2050320A1 (de) | 1970-10-13 | 1970-10-13 | Halbleiteranordnung |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE2050320A1 (xx) |
| FR (1) | FR2110392B1 (xx) |
| GB (1) | GB1352202A (xx) |
| NL (1) | NL7113931A (xx) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2331393A1 (de) * | 1972-06-30 | 1974-01-17 | Ibm | Verfahren zum herstellen von torelektroden aus silicium und aluminium bei feldeffekttransistoren |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH657712A5 (de) * | 1978-03-08 | 1986-09-15 | Hitachi Ltd | Referenzspannungserzeuger. |
-
1970
- 1970-10-13 DE DE19702050320 patent/DE2050320A1/de active Pending
-
1971
- 1971-10-11 NL NL7113931A patent/NL7113931A/xx unknown
- 1971-10-12 FR FR7136661A patent/FR2110392B1/fr not_active Expired
- 1971-10-13 GB GB4772771A patent/GB1352202A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2331393A1 (de) * | 1972-06-30 | 1974-01-17 | Ibm | Verfahren zum herstellen von torelektroden aus silicium und aluminium bei feldeffekttransistoren |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2110392A1 (xx) | 1972-06-02 |
| GB1352202A (en) | 1974-05-08 |
| NL7113931A (xx) | 1972-04-17 |
| FR2110392B1 (xx) | 1975-07-18 |
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