DE2047612A1 - Halbleiteranordnung - Google Patents
HalbleiteranordnungInfo
- Publication number
- DE2047612A1 DE2047612A1 DE19702047612 DE2047612A DE2047612A1 DE 2047612 A1 DE2047612 A1 DE 2047612A1 DE 19702047612 DE19702047612 DE 19702047612 DE 2047612 A DE2047612 A DE 2047612A DE 2047612 A1 DE2047612 A1 DE 2047612A1
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- substrate
- clock pulse
- transistors
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
- H03K5/135—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals by the use of time reference signals, e.g. clock signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Logic Circuits (AREA)
- Static Random-Access Memory (AREA)
- Shift Register Type Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP44077645A JPS5126772B1 (https=) | 1969-09-29 | 1969-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2047612A1 true DE2047612A1 (de) | 1971-04-22 |
Family
ID=13639614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702047612 Withdrawn DE2047612A1 (de) | 1969-09-29 | 1970-09-28 | Halbleiteranordnung |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5126772B1 (https=) |
| DE (1) | DE2047612A1 (https=) |
| FR (1) | FR2063062B1 (https=) |
| GB (1) | GB1309139A (https=) |
| NL (1) | NL166819C (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1459892A (fr) * | 1964-08-20 | 1966-06-17 | Texas Instruments Inc | Dispositifs semi-conducteurs |
| GB1131675A (en) * | 1966-07-11 | 1968-10-23 | Hitachi Ltd | Semiconductor device |
| GB1170705A (en) * | 1967-02-27 | 1969-11-12 | Hitachi Ltd | An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same |
-
1969
- 1969-09-29 JP JP44077645A patent/JPS5126772B1/ja active Pending
-
1970
- 1970-09-25 GB GB4582770A patent/GB1309139A/en not_active Expired
- 1970-09-28 DE DE19702047612 patent/DE2047612A1/de not_active Withdrawn
- 1970-09-29 NL NL7014289.A patent/NL166819C/xx not_active IP Right Cessation
- 1970-09-29 FR FR7035188A patent/FR2063062B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5126772B1 (https=) | 1976-08-09 |
| NL166819C (nl) | 1981-09-15 |
| FR2063062B1 (https=) | 1974-08-23 |
| FR2063062A1 (https=) | 1971-07-02 |
| NL166819B (nl) | 1981-04-15 |
| NL7014289A (https=) | 1971-03-31 |
| GB1309139A (en) | 1973-03-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |