GB1309139A - Integrated logic circuit semiconductor devices - Google Patents
Integrated logic circuit semiconductor devicesInfo
- Publication number
- GB1309139A GB1309139A GB4582770A GB4582770A GB1309139A GB 1309139 A GB1309139 A GB 1309139A GB 4582770 A GB4582770 A GB 4582770A GB 4582770 A GB4582770 A GB 4582770A GB 1309139 A GB1309139 A GB 1309139A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- layer
- type
- intermediately
- sept
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 230000003071 parasitic effect Effects 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000003993 interaction Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
- H03K5/135—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals by the use of time reference signals, e.g. clock signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Non-Volatile Memory (AREA)
- Logic Circuits (AREA)
- Static Random-Access Memory (AREA)
- Shift Register Type Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
1309139 Semi-conductor devices SONY CORP 25 Sept 1970 [29 Sept 1969] 45827/70 Heading H1K [Also in Division H3] Adjacent transistors M 3 of a plurality of delay flip-flop memory circuits (Fig. 5, not shown) comprising MIS transistors formed on a common substrate have drain and source electrodes Db, Sb, Dc, Sc formed with P-type layers in N-type substrate 2; an oxide insulant layer Cb overlying Db, Sb with gate Gb thereon, and an oxide insulant layer Cc overlying Dc, Sc with gate Gc thereon. A thicker insulant layer C2b, C2c is formed on the substrate intermediately of Cb and Cc to reduce the mutual conductance of the parasitic transistor Mb, Mc (Fig. 7, not shown) and is overlain by lead 3b interconnecting the gates to a clock pulse, and parasitic interaction leading to readout loss is prevented by a P-type layer 5 formed in the substrate intermediately of Sb and Sc simultaneously with the formation thereof; with an electrode 4 deposited thereon and connected to lead 3b. The drain and source are interchangable, and the memory circuit is described in detail. Specification 1,290,149 is referred to.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP44077645A JPS5126772B1 (en) | 1969-09-29 | 1969-09-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1309139A true GB1309139A (en) | 1973-03-07 |
Family
ID=13639614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4582770A Expired GB1309139A (en) | 1969-09-29 | 1970-09-25 | Integrated logic circuit semiconductor devices |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5126772B1 (en) |
DE (1) | DE2047612A1 (en) |
FR (1) | FR2063062B1 (en) |
GB (1) | GB1309139A (en) |
NL (1) | NL166819C (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1459892A (en) * | 1964-08-20 | 1966-06-17 | Texas Instruments Inc | Semiconductor devices |
GB1131675A (en) * | 1966-07-11 | 1968-10-23 | Hitachi Ltd | Semiconductor device |
GB1170705A (en) * | 1967-02-27 | 1969-11-12 | Hitachi Ltd | An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same |
-
1969
- 1969-09-29 JP JP44077645A patent/JPS5126772B1/ja active Pending
-
1970
- 1970-09-25 GB GB4582770A patent/GB1309139A/en not_active Expired
- 1970-09-28 DE DE19702047612 patent/DE2047612A1/en not_active Withdrawn
- 1970-09-29 FR FR7035188A patent/FR2063062B1/fr not_active Expired
- 1970-09-29 NL NL7014289A patent/NL166819C/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE2047612A1 (en) | 1971-04-22 |
FR2063062B1 (en) | 1974-08-23 |
FR2063062A1 (en) | 1971-07-02 |
JPS5126772B1 (en) | 1976-08-09 |
NL166819C (en) | 1981-09-15 |
NL166819B (en) | 1981-04-15 |
NL7014289A (en) | 1971-03-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PE20 | Patent expired after termination of 20 years |