JPS5126772B1 - - Google Patents

Info

Publication number
JPS5126772B1
JPS5126772B1 JP44077645A JP7764569A JPS5126772B1 JP S5126772 B1 JPS5126772 B1 JP S5126772B1 JP 44077645 A JP44077645 A JP 44077645A JP 7764569 A JP7764569 A JP 7764569A JP S5126772 B1 JPS5126772 B1 JP S5126772B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44077645A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP44077645A priority Critical patent/JPS5126772B1/ja
Priority to GB4582770A priority patent/GB1309139A/en
Priority to DE19702047612 priority patent/DE2047612A1/en
Priority to FR7035188A priority patent/FR2063062B1/fr
Priority to NL7014289A priority patent/NL166819C/en
Publication of JPS5126772B1 publication Critical patent/JPS5126772B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/13Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
    • H03K5/135Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals by the use of time reference signals, e.g. clock signals
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Nonlinear Science (AREA)
  • Logic Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Shift Register Type Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Static Random-Access Memory (AREA)
JP44077645A 1969-09-29 1969-09-29 Pending JPS5126772B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP44077645A JPS5126772B1 (en) 1969-09-29 1969-09-29
GB4582770A GB1309139A (en) 1969-09-29 1970-09-25 Integrated logic circuit semiconductor devices
DE19702047612 DE2047612A1 (en) 1969-09-29 1970-09-28 Semiconductor device
FR7035188A FR2063062B1 (en) 1969-09-29 1970-09-29
NL7014289A NL166819C (en) 1969-09-29 1970-09-29 SEMICONDUCTOR DEVICE CONTAINING A SEMICONDUCTOR BODY WITH AT LEAST TWO DISTANCE FROM EACH OTHER IN THE SEMICONDUCTOR BODY, INCLUDING AN INSULATIC COATING ON A HORSE-PROOF COATING ON A COATING LAYER.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44077645A JPS5126772B1 (en) 1969-09-29 1969-09-29

Publications (1)

Publication Number Publication Date
JPS5126772B1 true JPS5126772B1 (en) 1976-08-09

Family

ID=13639614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44077645A Pending JPS5126772B1 (en) 1969-09-29 1969-09-29

Country Status (5)

Country Link
JP (1) JPS5126772B1 (en)
DE (1) DE2047612A1 (en)
FR (1) FR2063062B1 (en)
GB (1) GB1309139A (en)
NL (1) NL166819C (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1459892A (en) * 1964-08-20 1966-06-17 Texas Instruments Inc Semiconductor devices
GB1131675A (en) * 1966-07-11 1968-10-23 Hitachi Ltd Semiconductor device
GB1170705A (en) * 1967-02-27 1969-11-12 Hitachi Ltd An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same

Also Published As

Publication number Publication date
NL166819C (en) 1981-09-15
DE2047612A1 (en) 1971-04-22
FR2063062A1 (en) 1971-07-02
GB1309139A (en) 1973-03-07
NL166819B (en) 1981-04-15
NL7014289A (en) 1971-03-31
FR2063062B1 (en) 1974-08-23

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