DE202013012849U1 - Vorrichtung zum Behandeln eines Siliziumsubstrates für ein Photovoltaikelement mit stabilisiertem Wirkungsgrad und verfahrensgemäß hergestelltes Photovoltaikelement - Google Patents

Vorrichtung zum Behandeln eines Siliziumsubstrates für ein Photovoltaikelement mit stabilisiertem Wirkungsgrad und verfahrensgemäß hergestelltes Photovoltaikelement Download PDF

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Publication number
DE202013012849U1
DE202013012849U1 DE202013012849.6U DE202013012849U DE202013012849U1 DE 202013012849 U1 DE202013012849 U1 DE 202013012849U1 DE 202013012849 U DE202013012849 U DE 202013012849U DE 202013012849 U1 DE202013012849 U1 DE 202013012849U1
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Prior art keywords
silicon substrate
hydrogen
photovoltaic element
silicon
temperature
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Expired - Lifetime
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DE202013012849.6U
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German (de)
English (en)
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Universitaet Konstanz
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Universitaet Konstanz
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Application filed by Universitaet Konstanz filed Critical Universitaet Konstanz
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/06—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated
    • F27B9/062—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated electrically heated
    • F27B9/066—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated electrically heated heated by lamps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/30—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B9/40—Arrangements of controlling or monitoring devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
DE202013012849.6U 2013-06-26 2013-09-26 Vorrichtung zum Behandeln eines Siliziumsubstrates für ein Photovoltaikelement mit stabilisiertem Wirkungsgrad und verfahrensgemäß hergestelltes Photovoltaikelement Expired - Lifetime DE202013012849U1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013010575 2013-06-26
DE102013010575.7 2013-06-26

Publications (1)

Publication Number Publication Date
DE202013012849U1 true DE202013012849U1 (de) 2020-07-03

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ID=49274634

Family Applications (2)

Application Number Title Priority Date Filing Date
DE202013012849.6U Expired - Lifetime DE202013012849U1 (de) 2013-06-26 2013-09-26 Vorrichtung zum Behandeln eines Siliziumsubstrates für ein Photovoltaikelement mit stabilisiertem Wirkungsgrad und verfahrensgemäß hergestelltes Photovoltaikelement
DE112013005591.0T Active DE112013005591C5 (de) 2013-06-26 2013-09-26 Verfahren und Vorrichtung zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE112013005591.0T Active DE112013005591C5 (de) 2013-06-26 2013-09-26 Verfahren und Vorrichtung zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad

Country Status (10)

Country Link
US (2) US10892376B2 (https=)
EP (1) EP3014663B1 (https=)
JP (1) JP6266768B2 (https=)
KR (1) KR101807381B1 (https=)
CN (1) CN105340085B (https=)
DE (2) DE202013012849U1 (https=)
ES (1) ES2830766T3 (https=)
MY (1) MY182430A (https=)
SG (1) SG11201510423YA (https=)
WO (1) WO2014206504A1 (https=)

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DE102013113123B4 (de) 2013-11-27 2021-11-18 Hanwha Q Cells Gmbh Solarzellenherstellungsverfahren
DE102013113108B4 (de) 2013-11-27 2024-08-29 Hanwha Q Cells Gmbh Solarzellenherstellungsverfahren
US20160005915A1 (en) * 2014-07-03 2016-01-07 Sino-American Silicon Products Inc. Method and apparatus for inhibiting light-induced degradation of photovoltaic device
JPWO2016067516A1 (ja) * 2014-10-27 2017-08-10 パナソニックＩｐマネジメント株式会社 太陽電池モジュールの製造方法、及び太陽電池モジュールの製造装置
EP3268982A4 (en) * 2015-03-13 2019-04-24 NewSouth Innovations Pty Limited PROCESS FOR MACHINING A SILICON MATERIAL
US10443941B2 (en) * 2015-05-20 2019-10-15 Illinois Tool Works Inc. Light annealing in a cooling chamber of a firing furnace
DE102015114298A1 (de) 2015-08-27 2017-03-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Stabilisieren einer photovoltaischen Silizium-Solarzelle
DE102015114240B4 (de) * 2015-08-27 2026-02-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Bearbeitung eines Halbleitersubstrats mittels Laserstrahlung
DE102015219087A1 (de) * 2015-10-02 2017-04-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Stabilisierung der Konversionseffizienz von Siliziumsolarzellen
CN108604619A (zh) * 2016-02-22 2018-09-28 应用材料意大利有限公司 用于处理太阳能电池基板的设备、用于处理太阳能电池基板的系统和用于处理太阳能电池基板的方法
FR3051074B1 (fr) * 2016-05-03 2018-05-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'une cellule photovoltaique a heterojonction
WO2017210731A1 (en) * 2016-06-06 2017-12-14 Newsouth Innovations Pty Limited A method for processing silicon material
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JP6655791B2 (ja) * 2016-08-25 2020-02-26 パナソニックＩｐマネジメント株式会社 太陽電池セル及びその製造方法
TWI585988B (zh) * 2016-10-21 2017-06-01 茂迪股份有限公司 太陽能電池
CN109983561B (zh) * 2016-11-22 2023-07-14 新南创新私人有限公司 用于加工硅基光伏器件的方法
KR101912772B1 (ko) * 2016-12-26 2019-01-14 주식회사 한화 광기전력 소자 제조 장치 및 제조 방법
US20220262973A1 (en) * 2018-07-30 2022-08-18 mPower Technology, Inc. In-situ rapid annealing and operation of solar cells for extreme environment applications
DE102019102227A1 (de) 2019-01-29 2019-11-14 Universität Konstanz Vorrichtung zum Messen einer Strahlungsintensität insbesondere in einem Durchlaufofen
CN112768372A (zh) * 2019-11-05 2021-05-07 伊利诺斯工具制品有限公司 烧结设备
DE102020002335B4 (de) 2020-04-17 2022-02-24 Ce Cell Engineering Gmbh Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Silizumsolarzelle
CN112599609B (zh) * 2020-12-15 2022-07-08 山东力诺阳光电力科技有限公司 一种高效晶体硅太阳能电池及其制备方法
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Also Published As

Publication number Publication date
DE112013005591A5 (de) 2015-10-22
US20160141445A1 (en) 2016-05-19
KR20160023687A (ko) 2016-03-03
WO2014206504A1 (de) 2014-12-31
JP6266768B2 (ja) 2018-01-24
ES2830766T3 (es) 2021-06-04
US20210057600A1 (en) 2021-02-25
DE112013005591B4 (de) 2016-08-04
EP3014663A1 (de) 2016-05-04
EP3014663B1 (de) 2020-09-02
US11784279B2 (en) 2023-10-10
US10892376B2 (en) 2021-01-12
CN105340085A (zh) 2016-02-17
JP2016525276A (ja) 2016-08-22
DE112013005591C5 (de) 2018-10-04
SG11201510423YA (en) 2016-01-28
MY182430A (en) 2021-01-25
KR101807381B1 (ko) 2018-01-10
CN105340085B (zh) 2018-07-06

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