DE2001584C3 - Sperrschicht-Feldeffekttransistor - Google Patents

Sperrschicht-Feldeffekttransistor

Info

Publication number
DE2001584C3
DE2001584C3 DE2001584A DE2001584A DE2001584C3 DE 2001584 C3 DE2001584 C3 DE 2001584C3 DE 2001584 A DE2001584 A DE 2001584A DE 2001584 A DE2001584 A DE 2001584A DE 2001584 C3 DE2001584 C3 DE 2001584C3
Authority
DE
Germany
Prior art keywords
zone
channel
conductivity type
semiconductor
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2001584A
Other languages
German (de)
English (en)
Other versions
DE2001584B2 (de
DE2001584A1 (de
Inventor
Heinz Prof.Dr.Rer.Nat. 5100 Aachen Beneking
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE2001584A priority Critical patent/DE2001584C3/de
Priority to GB5973570A priority patent/GB1335037A/en
Priority to FR707046908A priority patent/FR2076118B3/fr
Priority to US106199A priority patent/US3693055A/en
Publication of DE2001584A1 publication Critical patent/DE2001584A1/de
Publication of DE2001584B2 publication Critical patent/DE2001584B2/de
Application granted granted Critical
Publication of DE2001584C3 publication Critical patent/DE2001584C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
DE2001584A 1970-01-15 1970-01-15 Sperrschicht-Feldeffekttransistor Expired DE2001584C3 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE2001584A DE2001584C3 (de) 1970-01-15 1970-01-15 Sperrschicht-Feldeffekttransistor
GB5973570A GB1335037A (en) 1970-01-15 1970-12-16 Field effect transistor
FR707046908A FR2076118B3 (cg-RX-API-DMAC10.html) 1970-01-15 1970-12-28
US106199A US3693055A (en) 1970-01-15 1971-01-13 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2001584A DE2001584C3 (de) 1970-01-15 1970-01-15 Sperrschicht-Feldeffekttransistor

Publications (3)

Publication Number Publication Date
DE2001584A1 DE2001584A1 (de) 1971-07-29
DE2001584B2 DE2001584B2 (de) 1974-06-20
DE2001584C3 true DE2001584C3 (de) 1975-02-13

Family

ID=5759651

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2001584A Expired DE2001584C3 (de) 1970-01-15 1970-01-15 Sperrschicht-Feldeffekttransistor

Country Status (4)

Country Link
US (1) US3693055A (cg-RX-API-DMAC10.html)
DE (1) DE2001584C3 (cg-RX-API-DMAC10.html)
FR (1) FR2076118B3 (cg-RX-API-DMAC10.html)
GB (1) GB1335037A (cg-RX-API-DMAC10.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE29971E (en) * 1971-07-31 1979-04-17 Zaidan Hojin Hondotai Kenkyn Shinkokai Field effect semiconductor device having an unsaturated triode vacuum tube characteristic
JPS5217720B1 (cg-RX-API-DMAC10.html) * 1971-07-31 1977-05-17
JPS50122183A (cg-RX-API-DMAC10.html) * 1974-03-13 1975-09-25
US4240089A (en) * 1978-10-18 1980-12-16 General Electric Company Linearized charge transfer devices
FR2454703B1 (fr) * 1979-04-21 1985-11-15 Nippon Telegraph & Telephone Transistor a effet de champ et procede de fabrication

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3316131A (en) * 1963-08-15 1967-04-25 Texas Instruments Inc Method of producing a field-effect transistor
US3413531A (en) * 1966-09-06 1968-11-26 Ion Physics Corp High frequency field effect transistor

Also Published As

Publication number Publication date
DE2001584B2 (de) 1974-06-20
DE2001584A1 (de) 1971-07-29
US3693055A (en) 1972-09-19
FR2076118A7 (cg-RX-API-DMAC10.html) 1971-10-15
FR2076118B3 (cg-RX-API-DMAC10.html) 1973-08-10
GB1335037A (en) 1973-10-24

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E771 Valid patent as to the heymanns-index 1977, willingness to grant licences
8327 Change in the person/name/address of the patent owner

Owner name: LICENTIA PATENT-VERWALTUNGS-GMBH, 6000 FRANKFURT,

8339 Ceased/non-payment of the annual fee