GB1335037A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
GB1335037A
GB1335037A GB5973570A GB5973570A GB1335037A GB 1335037 A GB1335037 A GB 1335037A GB 5973570 A GB5973570 A GB 5973570A GB 5973570 A GB5973570 A GB 5973570A GB 1335037 A GB1335037 A GB 1335037A
Authority
GB
United Kingdom
Prior art keywords
region
gate
channel
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5973570A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB1335037A publication Critical patent/GB1335037A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
GB5973570A 1970-01-15 1970-12-16 Field effect transistor Expired GB1335037A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2001584A DE2001584C3 (de) 1970-01-15 1970-01-15 Sperrschicht-Feldeffekttransistor

Publications (1)

Publication Number Publication Date
GB1335037A true GB1335037A (en) 1973-10-24

Family

ID=5759651

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5973570A Expired GB1335037A (en) 1970-01-15 1970-12-16 Field effect transistor

Country Status (4)

Country Link
US (1) US3693055A (cg-RX-API-DMAC10.html)
DE (1) DE2001584C3 (cg-RX-API-DMAC10.html)
FR (1) FR2076118B3 (cg-RX-API-DMAC10.html)
GB (1) GB1335037A (cg-RX-API-DMAC10.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE29971E (en) * 1971-07-31 1979-04-17 Zaidan Hojin Hondotai Kenkyn Shinkokai Field effect semiconductor device having an unsaturated triode vacuum tube characteristic
JPS5217720B1 (cg-RX-API-DMAC10.html) * 1971-07-31 1977-05-17
JPS50122183A (cg-RX-API-DMAC10.html) * 1974-03-13 1975-09-25
US4240089A (en) * 1978-10-18 1980-12-16 General Electric Company Linearized charge transfer devices
FR2454703B1 (fr) * 1979-04-21 1985-11-15 Nippon Telegraph & Telephone Transistor a effet de champ et procede de fabrication

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3316131A (en) * 1963-08-15 1967-04-25 Texas Instruments Inc Method of producing a field-effect transistor
US3413531A (en) * 1966-09-06 1968-11-26 Ion Physics Corp High frequency field effect transistor

Also Published As

Publication number Publication date
DE2001584B2 (de) 1974-06-20
DE2001584A1 (de) 1971-07-29
US3693055A (en) 1972-09-19
FR2076118A7 (cg-RX-API-DMAC10.html) 1971-10-15
FR2076118B3 (cg-RX-API-DMAC10.html) 1973-08-10
DE2001584C3 (de) 1975-02-13

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees