DE19751745A1 - Gateisolierschicht mit diamantähnlichem Kohlenstoff und Dünnfilmtransistor, der diese verwendet, und einen Prozeß zum Herstellen der Gateisolierschicht und des Dünnfilmtransistors - Google Patents
Gateisolierschicht mit diamantähnlichem Kohlenstoff und Dünnfilmtransistor, der diese verwendet, und einen Prozeß zum Herstellen der Gateisolierschicht und des DünnfilmtransistorsInfo
- Publication number
- DE19751745A1 DE19751745A1 DE19751745A DE19751745A DE19751745A1 DE 19751745 A1 DE19751745 A1 DE 19751745A1 DE 19751745 A DE19751745 A DE 19751745A DE 19751745 A DE19751745 A DE 19751745A DE 19751745 A1 DE19751745 A1 DE 19751745A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- diamond
- carbon
- active layer
- source electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 127
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 127
- 239000010409 thin film Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims description 42
- 230000008569 process Effects 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title abstract description 11
- 239000010408 film Substances 0.000 title description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 44
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 40
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 13
- 229920005591 polysilicon Polymers 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 38
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 238000009413 insulation Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 4
- 230000005685 electric field effect Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000003575 carbonaceous material Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960057811A KR100272260B1 (ko) | 1996-11-27 | 1996-11-27 | 유사다이아몬드를 이용한 박막트랜지스터 및 그의 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE19751745A1 true DE19751745A1 (de) | 1998-05-28 |
Family
ID=19483727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19751745A Ceased DE19751745A1 (de) | 1996-11-27 | 1997-11-21 | Gateisolierschicht mit diamantähnlichem Kohlenstoff und Dünnfilmtransistor, der diese verwendet, und einen Prozeß zum Herstellen der Gateisolierschicht und des Dünnfilmtransistors |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3054862B2 (ko) |
| KR (1) | KR100272260B1 (ko) |
| DE (1) | DE19751745A1 (ko) |
| GB (1) | GB2319660B (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001045147A1 (en) * | 1999-12-15 | 2001-06-21 | Koninklijke Philips Electronics N.V. | Method of manufacturing a transistor |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11307782A (ja) * | 1998-04-24 | 1999-11-05 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| TW521537B (en) * | 1998-05-08 | 2003-02-21 | Idemitsu Kosan Co | Organic electroluminescence element |
| KR20000039802A (ko) * | 1998-12-16 | 2000-07-05 | 김영환 | 박막 트랜지스터 액정표시소자의 하부기판 제조방법 |
| KR100713877B1 (ko) * | 1998-12-18 | 2007-07-18 | 비오이 하이디스 테크놀로지 주식회사 | 박막 트랜지스터 액정표시장치 |
| KR100767354B1 (ko) * | 2000-09-04 | 2007-10-16 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그 제조방법 |
| JP2005228819A (ja) * | 2004-02-10 | 2005-08-25 | Mitsubishi Electric Corp | 半導体装置 |
| JP2005235923A (ja) | 2004-02-18 | 2005-09-02 | Nippon Hoso Kyokai <Nhk> | 有機薄膜トランジスタ及びその製造方法並びに有機薄膜デバイス |
| KR100696536B1 (ko) * | 2005-09-26 | 2007-03-19 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 이를 구비한 유기 발광디스플레이 장치 |
| KR100786498B1 (ko) * | 2005-09-27 | 2007-12-17 | 삼성에스디아이 주식회사 | 투명박막 트랜지스터 및 그 제조방법 |
| KR100963026B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| KR100963027B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| KR102573763B1 (ko) * | 2017-10-12 | 2023-08-31 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 유발 손상을 감소시키기 위한 프로세스 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2813023B2 (ja) * | 1990-03-13 | 1998-10-22 | 株式会社神戸製鋼所 | Ｍｉｓ型ダイヤモンド電界効果トランジスタ |
| JPH0815160B2 (ja) * | 1991-03-29 | 1996-02-14 | 株式会社神戸製鋼所 | ダイヤモンドショットキーゲート型電界効果トランジスタ |
| JPH0799318A (ja) * | 1993-09-28 | 1995-04-11 | Kobe Steel Ltd | ダイヤモンド薄膜電界効果トランジスタ及びその製造方法 |
| US5559367A (en) * | 1994-07-12 | 1996-09-24 | International Business Machines Corporation | Diamond-like carbon for use in VLSI and ULSI interconnect systems |
-
1996
- 1996-11-27 KR KR1019960057811A patent/KR100272260B1/ko not_active IP Right Cessation
-
1997
- 1997-11-20 GB GB9724618A patent/GB2319660B/en not_active Expired - Lifetime
- 1997-11-21 DE DE19751745A patent/DE19751745A1/de not_active Ceased
- 1997-11-21 JP JP9337840A patent/JP3054862B2/ja not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001045147A1 (en) * | 1999-12-15 | 2001-06-21 | Koninklijke Philips Electronics N.V. | Method of manufacturing a transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9724618D0 (en) | 1998-01-21 |
| JPH10294468A (ja) | 1998-11-04 |
| KR19980038871A (ko) | 1998-08-17 |
| KR100272260B1 (ko) | 2000-11-15 |
| GB2319660B (en) | 2001-10-24 |
| GB2319660A (en) | 1998-05-27 |
| JP3054862B2 (ja) | 2000-06-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8127 | New person/name/address of the applicant |
Owner name: HYUNDAI DISPLAY TECHNOLOGY, INC., KYOUNGKI, KR |
|
| 8127 | New person/name/address of the applicant |
Owner name: BOE-HYDIS TECHNOLOGY CO., LTD., KYOUNGKI, KR |
|
| 8131 | Rejection |