DE19737561C1 - Mehrfarbensensor - Google Patents

Mehrfarbensensor

Info

Publication number
DE19737561C1
DE19737561C1 DE19737561A DE19737561A DE19737561C1 DE 19737561 C1 DE19737561 C1 DE 19737561C1 DE 19737561 A DE19737561 A DE 19737561A DE 19737561 A DE19737561 A DE 19737561A DE 19737561 C1 DE19737561 C1 DE 19737561C1
Authority
DE
Germany
Prior art keywords
layers
color sensor
layer
diode
sensor according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19737561A
Other languages
German (de)
English (en)
Inventor
Helmut Stiebig
Dietmar Knipp
Joachim Foelsch
Heribert Wagner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE19737561A priority Critical patent/DE19737561C1/de
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Priority to PCT/DE1998/002598 priority patent/WO1999012206A1/de
Priority to US09/486,567 priority patent/US6310382B1/en
Priority to DE19881585T priority patent/DE19881585D2/de
Priority to DE59813530T priority patent/DE59813530D1/de
Priority to JP2000509116A priority patent/JP2001515275A/ja
Priority to EP98952540A priority patent/EP1018162B1/de
Priority to JP2000509115A priority patent/JP2001515274A/ja
Priority to EP98951263A priority patent/EP1016141A1/de
Priority to US09/486,208 priority patent/US6281561B1/en
Priority to PCT/DE1998/002593 priority patent/WO1999012205A1/de
Application granted granted Critical
Publication of DE19737561C1 publication Critical patent/DE19737561C1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass H10F
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
DE19737561A 1997-08-28 1997-08-28 Mehrfarbensensor Expired - Fee Related DE19737561C1 (de)

Priority Applications (11)

Application Number Priority Date Filing Date Title
DE19737561A DE19737561C1 (de) 1997-08-28 1997-08-28 Mehrfarbensensor
EP98951263A EP1016141A1 (de) 1997-08-28 1998-08-28 Mehrfarbensensor
DE19881585T DE19881585D2 (de) 1997-08-28 1998-08-28 Mehrfarbensensor
DE59813530T DE59813530D1 (de) 1997-08-28 1998-08-28 Mehrfarbensensor
JP2000509116A JP2001515275A (ja) 1997-08-28 1998-08-28 マルチカラーセンサー
EP98952540A EP1018162B1 (de) 1997-08-28 1998-08-28 Mehrfarbensensor
PCT/DE1998/002598 WO1999012206A1 (de) 1997-08-28 1998-08-28 Mehrfarbensensor
US09/486,567 US6310382B1 (en) 1997-08-28 1998-08-28 Multicolor sensor
US09/486,208 US6281561B1 (en) 1997-08-28 1998-08-28 Multicolor-color sensor
PCT/DE1998/002593 WO1999012205A1 (de) 1997-08-28 1998-08-28 Mehrfarbensensor
JP2000509115A JP2001515274A (ja) 1997-08-28 1998-08-28 マルチカラーセンサー

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19737561A DE19737561C1 (de) 1997-08-28 1997-08-28 Mehrfarbensensor

Publications (1)

Publication Number Publication Date
DE19737561C1 true DE19737561C1 (de) 1999-04-15

Family

ID=7840482

Family Applications (3)

Application Number Title Priority Date Filing Date
DE19737561A Expired - Fee Related DE19737561C1 (de) 1997-08-28 1997-08-28 Mehrfarbensensor
DE59813530T Expired - Fee Related DE59813530D1 (de) 1997-08-28 1998-08-28 Mehrfarbensensor
DE19881585T Expired - Fee Related DE19881585D2 (de) 1997-08-28 1998-08-28 Mehrfarbensensor

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE59813530T Expired - Fee Related DE59813530D1 (de) 1997-08-28 1998-08-28 Mehrfarbensensor
DE19881585T Expired - Fee Related DE19881585D2 (de) 1997-08-28 1998-08-28 Mehrfarbensensor

Country Status (5)

Country Link
US (2) US6281561B1 (enExample)
EP (2) EP1016141A1 (enExample)
JP (2) JP2001515275A (enExample)
DE (3) DE19737561C1 (enExample)
WO (2) WO1999012205A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10352741A1 (de) * 2003-11-12 2005-06-23 Austriamicrosystems Ag Strahlungsdetektierendes optoelektronisches Bauelement
DE102013112882A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Strahlungsempfängervorrichtung

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6373117B1 (en) * 1999-05-03 2002-04-16 Agilent Technologies, Inc. Stacked multiple photosensor structure including independent electrical connections to each photosensor
US6731397B1 (en) * 1999-05-21 2004-05-04 Foveon, Inc. Method for storing and retrieving digital image data from an imaging array
EP2144106A1 (en) * 1999-09-08 2010-01-13 Olympus Corporation Endoscope image pickup optical system
DE10131608B4 (de) * 2001-06-29 2004-02-05 Forschungszentrum Jülich GmbH Photosensor für ein Durchlichtverfahren zur Detektion der Bewegungsrichtung von Intensitätsmaxima und Intensitätsminima einer optischen stehenden Welle
US6646318B1 (en) 2002-08-15 2003-11-11 National Semiconductor Corporation Bandgap tuned vertical color imager cell
US6727530B1 (en) 2003-03-04 2004-04-27 Xindium Technologies, Inc. Integrated photodetector and heterojunction bipolar transistors
JP4075678B2 (ja) * 2003-05-06 2008-04-16 ソニー株式会社 固体撮像素子
US6958194B1 (en) 2003-10-21 2005-10-25 Foveon, Inc. Imager with improved sensitivity
JP2007027462A (ja) * 2005-07-19 2007-02-01 Sharp Corp 積層型カラーセンサ
JP5017989B2 (ja) * 2006-09-27 2012-09-05 ソニー株式会社 撮像装置、撮像方法
US7947941B2 (en) * 2006-11-01 2011-05-24 Finisar Corporation Photodiode having rounded edges for high electrostatic discharge threshold
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
JP5101925B2 (ja) * 2007-05-18 2012-12-19 オリンパス株式会社 光電変換膜積層型固体撮像素子
JP5498670B2 (ja) * 2007-07-13 2014-05-21 株式会社半導体エネルギー研究所 半導体基板の作製方法
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
WO2009059238A1 (en) 2007-11-02 2009-05-07 Applied Materials, Inc. Plasma treatment between deposition processes
US8471939B2 (en) * 2008-08-01 2013-06-25 Omnivision Technologies, Inc. Image sensor having multiple sensing layers
US20110088760A1 (en) * 2009-10-20 2011-04-21 Applied Materials, Inc. Methods of forming an amorphous silicon layer for thin film solar cell application
JP2011135058A (ja) * 2009-11-30 2011-07-07 Honda Motor Co Ltd 太陽電池素子、カラーセンサ、ならびに発光素子及び受光素子の製造方法
US20110317048A1 (en) 2010-06-29 2011-12-29 Aptina Imaging Corporation Image sensor with dual layer photodiode structure
US8872298B2 (en) 2010-07-01 2014-10-28 Samsung Electronics Co., Ltd. Unit pixel array of an image sensor
US8816461B2 (en) * 2011-09-13 2014-08-26 The Boeing Company Dichromatic photodiodes
FR3047002B1 (fr) * 2016-01-21 2020-01-31 Degremont Procede et dispositif de traitement d'eaux residuaires par oxydation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4820915A (en) * 1986-10-08 1989-04-11 Yamatake-Honeywell Co., Ltd. Color sensor with amorphous pin structure
EP0494694A2 (en) * 1991-01-11 1992-07-15 Canon Kabushiki Kaisha Photoelectric converting device and image processing apparatus utilizing the same
DE19512493A1 (de) * 1995-04-04 1996-10-10 Siemens Ag Farbsensoranordnung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0671097B2 (ja) * 1987-03-31 1994-09-07 鐘淵化学工業株式会社 カラ−センサ−
JPH0693519B2 (ja) * 1987-09-17 1994-11-16 株式会社富士電機総合研究所 非晶質光電変換装置
US5352920A (en) * 1988-06-06 1994-10-04 Canon Kabushiki Kaisha Photoelectric converter with light shielding sections
US5311047A (en) 1988-11-16 1994-05-10 National Science Council Amorphous SI/SIC heterojunction color-sensitive phototransistor
US5298771A (en) * 1992-11-09 1994-03-29 Xerox Corporation Color imaging charge-coupled array with photosensitive layers in potential wells
US5738731A (en) * 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
US6191465B1 (en) * 1994-01-10 2001-02-20 John Lawrence Freeouf Solid state radiation detector
AU3519395A (en) * 1994-10-30 1996-05-23 Markus Bohm Three-colour sensor
US5923049A (en) * 1995-08-31 1999-07-13 Cohausz & Florack Trichromatic sensor
US6043549A (en) * 1998-03-20 2000-03-28 Trw Inc. Responsivity photodetector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4820915A (en) * 1986-10-08 1989-04-11 Yamatake-Honeywell Co., Ltd. Color sensor with amorphous pin structure
EP0494694A2 (en) * 1991-01-11 1992-07-15 Canon Kabushiki Kaisha Photoelectric converting device and image processing apparatus utilizing the same
DE19512493A1 (de) * 1995-04-04 1996-10-10 Siemens Ag Farbsensoranordnung

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10352741A1 (de) * 2003-11-12 2005-06-23 Austriamicrosystems Ag Strahlungsdetektierendes optoelektronisches Bauelement
US7683449B2 (en) 2003-11-12 2010-03-23 Austriamicrosystems Ag Radiation-detecting optoelectronic component
DE10352741B4 (de) * 2003-11-12 2012-08-16 Austriamicrosystems Ag Strahlungsdetektierendes optoelektronisches Bauelement, Verfahren zu dessen Herstellung und Verwendung
DE102013112882A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Strahlungsempfängervorrichtung
US9843399B2 (en) 2013-11-21 2017-12-12 Osram Opto Semiconductors Gmbh Radiation receiver apparatus
DE102013112882B4 (de) 2013-11-21 2019-05-09 Osram Opto Semiconductors Gmbh Strahlungsempfängervorrichtung

Also Published As

Publication number Publication date
WO1999012205A1 (de) 1999-03-11
DE59813530D1 (de) 2006-06-08
JP2001515274A (ja) 2001-09-18
US6281561B1 (en) 2001-08-28
EP1018162B1 (de) 2006-05-03
WO1999012205A9 (de) 1999-09-02
US6310382B1 (en) 2001-10-30
DE19881585D2 (de) 2000-10-12
WO1999012206A1 (de) 1999-03-11
JP2001515275A (ja) 2001-09-18
EP1018162A1 (de) 2000-07-12
EP1016141A1 (de) 2000-07-05

Similar Documents

Publication Publication Date Title
DE19737561C1 (de) Mehrfarbensensor
DE69721112T2 (de) Drei- oder Vier-Band-multispektrale Strukturen mit zwei gleichzeitigen Ausgangssignalen
DE69222229T2 (de) Zweifarbige Strahlungsdetektoranordnung und Verfahren zu ihrer Herstellung
DE60318848T2 (de) Abbildungsvorrichtung
DE102007037020B3 (de) Avalanche-Photodiode
DE69130732T2 (de) Herstellungsverfahren für eine Opto-elektronische Strahlungsdetektormatrix
DE3503048A1 (de) Zweidimensionale bildlesevorrichtung
EP0788661B1 (de) Dreifarbensensor
DE19714054A1 (de) SiGe-Photodetektor mit hohem Wirkungsgrad
EP0892992B1 (de) Drei-farbensensor mit einer pin- oder nip-schichtenfolge
DE8706818U1 (de) Fotodiodenmatrix
DE3234044C2 (enExample)
DE3877785T2 (de) Seitlich bestrahlte detektorenanordnung mit stoerstellenbandleitung.
DE102020209822A1 (de) Sensor und verfahren zum bilden von selbigem
DE69802234T2 (de) Aus amorphem Silizium und Legierungen bestehendes Infrarot-Detektor Bauelement
DE69503565T2 (de) Spannungsgesteuerter Photodetektor mit veränderlichem Spektrum für 2D-Farbbildaufnahmen
DE2818002C2 (de) Flüssigkristall-Lichtventil
DE10019089C1 (de) Wellenlängenselektive pn-Übergangs-Photodiode
DE19512493A1 (de) Farbsensoranordnung
DE3533146A1 (de) Farbsensorelement, farbempfindliche sensoranordnung mit derartigen farbsensorelementen, eine anwendung des elements oder der anordnung und ein verfahren zur herstellung eines halbleitermaterials fuer das farbsensorelement
DE60127335T2 (de) Vorrichtung und Verfahren zum Schutz integrierter Ladungsspeicherelemente vor photoinduzierten Strömen
DE4101110A1 (de) Photoleitfaehiges material
DE19637126C2 (de) Variospektral-Vielfarbendiode
EP0948817A1 (de) Farbbildsensor in ladungsverschiebetechnik
DE3125976C2 (enExample)

Legal Events

Date Code Title Description
8100 Publication of patent without earlier publication of application
D1 Grant (no unexamined application published) patent law 81
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee