JP2001515275A - マルチカラーセンサー - Google Patents

マルチカラーセンサー

Info

Publication number
JP2001515275A
JP2001515275A JP2000509116A JP2000509116A JP2001515275A JP 2001515275 A JP2001515275 A JP 2001515275A JP 2000509116 A JP2000509116 A JP 2000509116A JP 2000509116 A JP2000509116 A JP 2000509116A JP 2001515275 A JP2001515275 A JP 2001515275A
Authority
JP
Japan
Prior art keywords
layers
layer
diode
sensor
pin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000509116A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001515275A5 (enExample
Inventor
シュティービヒ・ヘルムート
クニップ・ディートマル
フェルシュ・ヨーアヒム
ヴァーグナー・ヘーリベルト
Original Assignee
フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング filed Critical フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング
Publication of JP2001515275A publication Critical patent/JP2001515275A/ja
Publication of JP2001515275A5 publication Critical patent/JP2001515275A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass H10F
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2000509116A 1997-08-28 1998-08-28 マルチカラーセンサー Pending JP2001515275A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19737561A DE19737561C1 (de) 1997-08-28 1997-08-28 Mehrfarbensensor
DE19737561.8 1997-08-28
PCT/DE1998/002598 WO1999012206A1 (de) 1997-08-28 1998-08-28 Mehrfarbensensor

Publications (2)

Publication Number Publication Date
JP2001515275A true JP2001515275A (ja) 2001-09-18
JP2001515275A5 JP2001515275A5 (enExample) 2007-11-08

Family

ID=7840482

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000509115A Pending JP2001515274A (ja) 1997-08-28 1998-08-28 マルチカラーセンサー
JP2000509116A Pending JP2001515275A (ja) 1997-08-28 1998-08-28 マルチカラーセンサー

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2000509115A Pending JP2001515274A (ja) 1997-08-28 1998-08-28 マルチカラーセンサー

Country Status (5)

Country Link
US (2) US6310382B1 (enExample)
EP (2) EP1016141A1 (enExample)
JP (2) JP2001515274A (enExample)
DE (3) DE19737561C1 (enExample)
WO (2) WO1999012205A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027462A (ja) * 2005-07-19 2007-02-01 Sharp Corp 積層型カラーセンサ
JP2008288404A (ja) * 2007-05-18 2008-11-27 Olympus Corp 光電変換膜積層型固体撮像素子
KR101116448B1 (ko) * 2003-05-06 2012-03-07 소니 주식회사 고체 촬상 소자

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6373117B1 (en) * 1999-05-03 2002-04-16 Agilent Technologies, Inc. Stacked multiple photosensor structure including independent electrical connections to each photosensor
US6731397B1 (en) * 1999-05-21 2004-05-04 Foveon, Inc. Method for storing and retrieving digital image data from an imaging array
WO2001018585A1 (en) * 1999-09-08 2001-03-15 Olympus Optical Co., Ltd. Image pickup optical system for endoscope
DE10131608B4 (de) * 2001-06-29 2004-02-05 Forschungszentrum Jülich GmbH Photosensor für ein Durchlichtverfahren zur Detektion der Bewegungsrichtung von Intensitätsmaxima und Intensitätsminima einer optischen stehenden Welle
US6646318B1 (en) 2002-08-15 2003-11-11 National Semiconductor Corporation Bandgap tuned vertical color imager cell
US6727530B1 (en) 2003-03-04 2004-04-27 Xindium Technologies, Inc. Integrated photodetector and heterojunction bipolar transistors
US6958194B1 (en) 2003-10-21 2005-10-25 Foveon, Inc. Imager with improved sensitivity
DE10352741B4 (de) * 2003-11-12 2012-08-16 Austriamicrosystems Ag Strahlungsdetektierendes optoelektronisches Bauelement, Verfahren zu dessen Herstellung und Verwendung
JP5017989B2 (ja) * 2006-09-27 2012-09-05 ソニー株式会社 撮像装置、撮像方法
US7947941B2 (en) * 2006-11-01 2011-05-24 Finisar Corporation Photodiode having rounded edges for high electrostatic discharge threshold
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
JP5498670B2 (ja) * 2007-07-13 2014-05-21 株式会社半導体エネルギー研究所 半導体基板の作製方法
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
US7741144B2 (en) 2007-11-02 2010-06-22 Applied Materials, Inc. Plasma treatment between deposition processes
US8471939B2 (en) * 2008-08-01 2013-06-25 Omnivision Technologies, Inc. Image sensor having multiple sensing layers
US20110088760A1 (en) * 2009-10-20 2011-04-21 Applied Materials, Inc. Methods of forming an amorphous silicon layer for thin film solar cell application
JP2011135058A (ja) * 2009-11-30 2011-07-07 Honda Motor Co Ltd 太陽電池素子、カラーセンサ、ならびに発光素子及び受光素子の製造方法
US20110317048A1 (en) 2010-06-29 2011-12-29 Aptina Imaging Corporation Image sensor with dual layer photodiode structure
US8872298B2 (en) 2010-07-01 2014-10-28 Samsung Electronics Co., Ltd. Unit pixel array of an image sensor
US8816461B2 (en) * 2011-09-13 2014-08-26 The Boeing Company Dichromatic photodiodes
DE102013112882B4 (de) * 2013-11-21 2019-05-09 Osram Opto Semiconductors Gmbh Strahlungsempfängervorrichtung
FR3047002B1 (fr) * 2016-01-21 2020-01-31 Degremont Procede et dispositif de traitement d'eaux residuaires par oxydation

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6394125A (ja) * 1986-10-08 1988-04-25 Yamatake Honeywell Co Ltd カラ−センサ
JPH0671097B2 (ja) * 1987-03-31 1994-09-07 鐘淵化学工業株式会社 カラ−センサ−
JPH0693519B2 (ja) * 1987-09-17 1994-11-16 株式会社富士電機総合研究所 非晶質光電変換装置
US5352920A (en) * 1988-06-06 1994-10-04 Canon Kabushiki Kaisha Photoelectric converter with light shielding sections
US5311047A (en) * 1988-11-16 1994-05-10 National Science Council Amorphous SI/SIC heterojunction color-sensitive phototransistor
JP2765635B2 (ja) * 1991-01-11 1998-06-18 キヤノン株式会社 光電変換装置
US5298771A (en) * 1992-11-09 1994-03-29 Xerox Corporation Color imaging charge-coupled array with photosensitive layers in potential wells
US5738731A (en) * 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
US6191465B1 (en) * 1994-01-10 2001-02-20 John Lawrence Freeouf Solid state radiation detector
EP0788661B1 (de) * 1994-10-30 1999-06-16 Böhm, Markus, Prof. Dr.-Ing. Dreifarbensensor
DE19512493A1 (de) * 1995-04-04 1996-10-10 Siemens Ag Farbsensoranordnung
US5923049A (en) * 1995-08-31 1999-07-13 Cohausz & Florack Trichromatic sensor
US6043549A (en) * 1998-03-20 2000-03-28 Trw Inc. Responsivity photodetector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101116448B1 (ko) * 2003-05-06 2012-03-07 소니 주식회사 고체 촬상 소자
JP2007027462A (ja) * 2005-07-19 2007-02-01 Sharp Corp 積層型カラーセンサ
JP2008288404A (ja) * 2007-05-18 2008-11-27 Olympus Corp 光電変換膜積層型固体撮像素子

Also Published As

Publication number Publication date
EP1018162B1 (de) 2006-05-03
EP1018162A1 (de) 2000-07-12
EP1016141A1 (de) 2000-07-05
JP2001515274A (ja) 2001-09-18
WO1999012206A1 (de) 1999-03-11
WO1999012205A9 (de) 1999-09-02
DE19737561C1 (de) 1999-04-15
US6281561B1 (en) 2001-08-28
US6310382B1 (en) 2001-10-30
DE59813530D1 (de) 2006-06-08
DE19881585D2 (de) 2000-10-12
WO1999012205A1 (de) 1999-03-11

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