DE19615179B4 - Verfahren zur Herstellung lichtemittierender Halbleiterbauelemente mit verbesserter Stabilität - Google Patents

Verfahren zur Herstellung lichtemittierender Halbleiterbauelemente mit verbesserter Stabilität Download PDF

Info

Publication number
DE19615179B4
DE19615179B4 DE19615179A DE19615179A DE19615179B4 DE 19615179 B4 DE19615179 B4 DE 19615179B4 DE 19615179 A DE19615179 A DE 19615179A DE 19615179 A DE19615179 A DE 19615179A DE 19615179 B4 DE19615179 B4 DE 19615179B4
Authority
DE
Germany
Prior art keywords
oxygen
forming
region
layer
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19615179A
Other languages
German (de)
English (en)
Other versions
DE19615179A1 (de
Inventor
Stephen A. San Jose Stockman
Daniel A. Cupertino Steigerwald
Changhua San Jose Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds LLC
Original Assignee
Lumileds LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumileds LLC filed Critical Lumileds LLC
Publication of DE19615179A1 publication Critical patent/DE19615179A1/de
Application granted granted Critical
Publication of DE19615179B4 publication Critical patent/DE19615179B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure

Landscapes

  • Led Devices (AREA)
DE19615179A 1995-06-05 1996-04-17 Verfahren zur Herstellung lichtemittierender Halbleiterbauelemente mit verbesserter Stabilität Expired - Fee Related DE19615179B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US46337195A 1995-06-05 1995-06-05
US08/463,371 1995-06-05

Publications (2)

Publication Number Publication Date
DE19615179A1 DE19615179A1 (de) 1996-12-12
DE19615179B4 true DE19615179B4 (de) 2004-04-08

Family

ID=23839854

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19615179A Expired - Fee Related DE19615179B4 (de) 1995-06-05 1996-04-17 Verfahren zur Herstellung lichtemittierender Halbleiterbauelemente mit verbesserter Stabilität

Country Status (5)

Country Link
US (1) US5909051A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP3682938B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE19615179B4 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2301934B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW319916B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6794731B2 (en) * 1997-02-18 2004-09-21 Lumileds Lighting U.S., Llc Minority carrier semiconductor devices with improved reliability
JP3461112B2 (ja) * 1997-12-19 2003-10-27 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子
US20010020703A1 (en) * 1998-07-24 2001-09-13 Nathan F. Gardner Algainp light emitting devices with thin active layers
US6469314B1 (en) * 1999-12-21 2002-10-22 Lumileds Lighting U.S., Llc Thin multi-well active layer LED with controlled oxygen doping
US6573537B1 (en) 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US6903376B2 (en) 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
US6486499B1 (en) 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6885035B2 (en) 1999-12-22 2005-04-26 Lumileds Lighting U.S., Llc Multi-chip semiconductor LED assembly
US6514782B1 (en) 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
US6555457B1 (en) * 2000-04-07 2003-04-29 Triquint Technology Holding Co. Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit
US6429460B1 (en) * 2000-09-28 2002-08-06 United Epitaxy Company, Ltd. Highly luminous light emitting device
CN1207937C (zh) * 2000-10-09 2005-06-22 诺基亚公司 无线电资源管理
US6608328B2 (en) * 2001-02-05 2003-08-19 Uni Light Technology Inc. Semiconductor light emitting diode on a misoriented substrate
US6563142B2 (en) * 2001-07-11 2003-05-13 Lumileds Lighting, U.S., Llc Reducing the variation of far-field radiation patterns of flipchip light emitting diodes
US6891202B2 (en) 2001-12-14 2005-05-10 Infinera Corporation Oxygen-doped Al-containing current blocking layers in active semiconductor devices
KR100916489B1 (ko) * 2007-07-27 2009-09-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8237049B2 (en) * 2007-08-29 2012-08-07 The Boeing Company Photovoltaic cells with selectively patterned transparent conductive coatings, and associated methods
DE102010035489A1 (de) * 2010-08-26 2012-03-01 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelement
WO2020121794A1 (ja) 2018-12-11 2020-06-18 パナソニックセミコンダクターソリューションズ株式会社 窒化物系半導体発光素子及びその製造方法、並びに、窒化物系半導体結晶の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3869281A (en) * 1974-02-14 1975-03-04 Nl Industries Inc Removal of nickel from molten magnesium metal
US4231050A (en) * 1979-01-30 1980-10-28 Bell Telephone Laboratories, Incorporated Reduction of surface recombination current in GaAs devices
DE3614079A1 (de) * 1985-02-04 1987-10-29 Mitsubishi Monsanto Chem Einkristall einer iii/v-verbindung, insbesondere gaas und verfahren zu seiner herstellung
US5068204A (en) * 1987-03-27 1991-11-26 Misawa Co. Ltd. Method of manufacturing a light emitting element
US5103269A (en) * 1989-07-10 1992-04-07 Sharp Kabushiki Kaisha Electroluminescent device of compound semiconductor comprising zns or zns and znse
US5153889A (en) * 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JPH0797780A (ja) * 1993-05-17 1995-04-11 Tokai Senko Kk 捺染布帛の蒸熱処理における含水率調整装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3812516A (en) * 1970-05-01 1974-05-21 Bell Telephone Labor Inc Spontaneously emitting hetero-structure junction diodes
US3806774A (en) * 1972-07-10 1974-04-23 Bell Telephone Labor Inc Bistable light emitting devices
US3936322A (en) * 1974-07-29 1976-02-03 International Business Machines Corporation Method of making a double heterojunction diode laser
US4160261A (en) * 1978-01-13 1979-07-03 Bell Telephone Laboratories, Incorporated Mis heterojunction structures
JPS54152485A (en) * 1978-05-23 1979-11-30 Toshiba Corp Electrode forming method for gallium phosphide light- emitting diode
US4297783A (en) * 1979-01-30 1981-11-03 Bell Telephone Laboratories, Incorporated Method of fabricating GaAs devices utilizing a semi-insulating layer of AlGaAs in combination with an overlying masking layer
US4548654A (en) * 1983-06-03 1985-10-22 Motorola, Inc. Surface denuding of silicon wafer
US4888624A (en) * 1984-06-15 1989-12-19 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement
US4719497A (en) * 1984-06-15 1988-01-12 Hewlett-Packard Company High efficiency light-emitting diode
US4610731A (en) * 1985-04-03 1986-09-09 At&T Bell Laboratories Shallow impurity neutralization
JPS6286785A (ja) * 1985-10-11 1987-04-21 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
US4861976A (en) * 1988-06-06 1989-08-29 American Telephone And Telegraph Company, At&T Bell Laboratories Optical or opto-electronic device having a trapping layer in contact with a semiconductive layer
JP2795195B2 (ja) * 1994-09-28 1998-09-10 信越半導体株式会社 発光素子

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3869281A (en) * 1974-02-14 1975-03-04 Nl Industries Inc Removal of nickel from molten magnesium metal
US4231050A (en) * 1979-01-30 1980-10-28 Bell Telephone Laboratories, Incorporated Reduction of surface recombination current in GaAs devices
DE3614079A1 (de) * 1985-02-04 1987-10-29 Mitsubishi Monsanto Chem Einkristall einer iii/v-verbindung, insbesondere gaas und verfahren zu seiner herstellung
US5068204A (en) * 1987-03-27 1991-11-26 Misawa Co. Ltd. Method of manufacturing a light emitting element
US5153889A (en) * 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5103269A (en) * 1989-07-10 1992-04-07 Sharp Kabushiki Kaisha Electroluminescent device of compound semiconductor comprising zns or zns and znse
JPH0797780A (ja) * 1993-05-17 1995-04-11 Tokai Senko Kk 捺染布帛の蒸熱処理における含水率調整装置

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
"Appl.Phys.Lett." 61 (1992) 1266-1268 *
ASHCROFT, N.W.,MERMIN, N.D.: "Solid State Physics", Saunders College, Philadelphia 1981, S. 635-636 *
KITTEL, Ch.: "Einführung in die Festkörperphysik", 6. Aufl., R. Oldenbourg Verlag, München 1983, S. 615-617
KITTEL, Ch.: "Einführung in die Festkörperphysik",6. Aufl., R. Oldenbourg Verlag, München 1983, S. 615-617 *
SZE, S.M.: "Physics of Semiconductor Devices" J. Wiley & Sons (1969) S. 30 *

Also Published As

Publication number Publication date
US5909051A (en) 1999-06-01
JP3682938B2 (ja) 2005-08-17
TW319916B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1997-11-11
DE19615179A1 (de) 1996-12-12
GB2301934A (en) 1996-12-18
GB2301934B (en) 2000-01-19
JPH08330626A (ja) 1996-12-13
GB9611093D0 (en) 1996-07-31

Similar Documents

Publication Publication Date Title
DE19615179B4 (de) Verfahren zur Herstellung lichtemittierender Halbleiterbauelemente mit verbesserter Stabilität
DE69524341T2 (de) Lichtemittierende Vorrichtung aus einer Nitridverbindung der Gruppe III
DE4017632C2 (de) Lichtemittierende Halbleitervorrichtung
DE69017396T2 (de) Lichtemittierende Diode mit einer elektrisch leitenden Fensterschicht.
DE19725578B4 (de) Reduzierung der Rißbildung im Material von III-V-Nitrid-Halbleiterbauelementen bei gleichzeitiger Maximierung der elektrischen Dotierung
DE68923135T2 (de) Verfahren zur Herstellung einer elektro-optischen Vorrichtung mit einem umgekehrten durchsichtigen Substrat.
DE68927272T2 (de) Doppelte Heteroübergang-AlGaAs-Elektrolumineszierende Diode mit P-Typ nach oben
DE60014097T2 (de) Nitrid-halbleiterschichtenstruktur und deren anwendung in halbleiterlasern
DE4119921C2 (de) Halbleiterlaser zur Erzeugung sichtbaren Lichts
DE19830838B4 (de) Halbleiterlichtemissionseinrichtung
DE19648955A1 (de) III-V-Verbindungshalbleiter und lichtemittierende Vorrichtung
DE19882202B4 (de) Lichtemittierende Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE102005006766A1 (de) Niedrig dotierte Schicht für ein nitrid-basiertes Halbleiterbauelement
DE3104082C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE3721761C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE10008584A1 (de) Halbleiterbauelement für die Emission elektromagnetischer Strahlung und Verfahren zu dessen Herstellung
DE2600319C3 (de) Verfahren zur Herstellung einer Galliumarsenid-Lumineszenzdiode
DE112014002691T5 (de) Anregungsbereich, der Nanopunkte (auch als "Quantenpunkte" bezeichnet) in einem Matrixkristall umfasst, der auf Si-Substrat gezüchtet wurde und aus AlyInxGa1-y-xN-Kristall (y ≧ 0, x > 0) mit Zinkblendestruktur (auch als "kubisch" bezeichnet) besteht, und lichtemittierende Vorrichtung (LED und LD), die unter Verwendung desselben erhalten wurde
DE3887790T2 (de) Lichtemittierende Halbleitervorrichtung.
DE69219100T2 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE69522026T2 (de) Lichtemittierende Halbleitervorrichtung mit Verbindung aus Stickstoff und Elementen der Gruppe III
DE3587702T2 (de) Halbleiterlaser.
DE2627355B2 (de) Lichtemittierende Festkörpervorrichtung und Verfahren zu deren Herstellung
DE3324220A1 (de) Gallium-phosphid-leuchtdiode
DE3880442T2 (de) Epitaxiale scheibe.

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA

8127 New person/name/address of the applicant

Owner name: LUMILEDS LIGHTING, U.S., LLC, SAN JOSE, CALIF., US

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY,LLC, SAN JOS, US

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20111102