DE19522161C2 - MOS-Halbleiterbauelement mit verbesserten Durchlaßeigenschaften - Google Patents

MOS-Halbleiterbauelement mit verbesserten Durchlaßeigenschaften

Info

Publication number
DE19522161C2
DE19522161C2 DE19522161A DE19522161A DE19522161C2 DE 19522161 C2 DE19522161 C2 DE 19522161C2 DE 19522161 A DE19522161 A DE 19522161A DE 19522161 A DE19522161 A DE 19522161A DE 19522161 C2 DE19522161 C2 DE 19522161C2
Authority
DE
Germany
Prior art keywords
base
electrode
source
base region
mos semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19522161A
Other languages
German (de)
English (en)
Other versions
DE19522161A1 (de
Inventor
Heinrich Dr Brunner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to DE19522161A priority Critical patent/DE19522161C2/de
Priority to US08/645,505 priority patent/US5703384A/en
Priority to EP96109350A priority patent/EP0750351B1/de
Priority to DE59610322T priority patent/DE59610322D1/de
Priority to JP8157085A priority patent/JPH098304A/ja
Publication of DE19522161A1 publication Critical patent/DE19522161A1/de
Application granted granted Critical
Publication of DE19522161C2 publication Critical patent/DE19522161C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Thyristors (AREA)
DE19522161A 1995-06-19 1995-06-19 MOS-Halbleiterbauelement mit verbesserten Durchlaßeigenschaften Expired - Fee Related DE19522161C2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE19522161A DE19522161C2 (de) 1995-06-19 1995-06-19 MOS-Halbleiterbauelement mit verbesserten Durchlaßeigenschaften
US08/645,505 US5703384A (en) 1995-06-19 1996-05-14 MOS semiconductor component having improved transmission properties
EP96109350A EP0750351B1 (de) 1995-06-19 1996-06-10 MOS-Halbleiterbauelement mit verbesserten Durchlasseigenschaften
DE59610322T DE59610322D1 (de) 1995-06-19 1996-06-10 MOS-Halbleiterbauelement mit verbesserten Durchlasseigenschaften
JP8157085A JPH098304A (ja) 1995-06-19 1996-06-18 良好な導通特性を備えたｍｏｓ半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19522161A DE19522161C2 (de) 1995-06-19 1995-06-19 MOS-Halbleiterbauelement mit verbesserten Durchlaßeigenschaften

Publications (2)

Publication Number Publication Date
DE19522161A1 DE19522161A1 (de) 1997-01-09
DE19522161C2 true DE19522161C2 (de) 1998-12-24

Family

ID=7764673

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19522161A Expired - Fee Related DE19522161C2 (de) 1995-06-19 1995-06-19 MOS-Halbleiterbauelement mit verbesserten Durchlaßeigenschaften
DE59610322T Expired - Lifetime DE59610322D1 (de) 1995-06-19 1996-06-10 MOS-Halbleiterbauelement mit verbesserten Durchlasseigenschaften

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE59610322T Expired - Lifetime DE59610322D1 (de) 1995-06-19 1996-06-10 MOS-Halbleiterbauelement mit verbesserten Durchlasseigenschaften

Country Status (4)

Country Link
US (1) US5703384A (enExample)
EP (1) EP0750351B1 (enExample)
JP (1) JPH098304A (enExample)
DE (2) DE19522161C2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266622A (ja) * 1996-04-11 2007-10-11 Mitsubishi Electric Corp 高耐圧半導体装置およびその製造方法
DE19651108C2 (de) 1996-04-11 2000-11-23 Mitsubishi Electric Corp Halbleitereinrichtung des Gategrabentyps mit hoher Durchbruchsspannung und ihr Herstellungsverfahren
GB2321337B (en) * 1997-01-21 2001-11-07 Plessey Semiconductors Ltd Improvements in or relating to semiconductor devices
JP3424579B2 (ja) * 1998-02-27 2003-07-07 株式会社豊田中央研究所 半導体装置
WO2000030177A1 (de) * 1998-11-18 2000-05-25 Infineon Technologies Ag Halbleiterbauelement mit dielektrischen oder halbisolierenden abschirmstrukturen
EP1005092A1 (en) 1998-11-26 2000-05-31 STMicroelectronics S.r.l. High breakdown voltage PN junction structure and related manufacturing process
JP4696327B2 (ja) * 1999-06-04 2011-06-08 株式会社豊田中央研究所 絶縁ゲート形半導体素子
JP4783975B2 (ja) * 2000-11-21 2011-09-28 富士電機株式会社 Ｍｉｓ半導体装置およびその製造方法
JP4779204B2 (ja) * 2001-01-09 2011-09-28 富士電機株式会社 Ｍｉｓ半導体装置
JP4800597B2 (ja) * 2004-07-02 2011-10-26 株式会社豊田中央研究所 半導体装置
JP5114832B2 (ja) * 2004-09-02 2013-01-09 富士電機株式会社 半導体装置およびその製造方法
US8120074B2 (en) * 2009-10-29 2012-02-21 Infineon Technologies Austria Ag Bipolar semiconductor device and manufacturing method
JP5461599B2 (ja) * 2012-02-15 2014-04-02 三菱電機株式会社 電力用半導体装置
KR20150031668A (ko) * 2013-09-16 2015-03-25 삼성전기주식회사 전력 반도체 소자
CN111697078A (zh) * 2020-06-29 2020-09-22 电子科技大学 高雪崩耐量的vdmos器件及制备方法
JP7513553B2 (ja) * 2021-03-11 2024-07-09 株式会社東芝 半導体装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237965A (ja) * 1985-08-13 1987-02-18 Tdk Corp 縦形半導体装置およびその製造方法
US4862232A (en) * 1986-09-22 1989-08-29 General Motors Corporation Transistor structure for high temperature logic circuits with insulation around source and drain regions
US4791462A (en) * 1987-09-10 1988-12-13 Siliconix Incorporated Dense vertical j-MOS transistor
JP2653095B2 (ja) * 1988-04-22 1997-09-10 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
TW399774U (en) * 1989-07-03 2000-07-21 Gen Electric FET, IGBT and MCT structures to enhance operating characteristics
DE4113756C2 (de) * 1991-04-26 1994-05-26 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
JP3063278B2 (ja) * 1991-08-28 2000-07-12 日本電気株式会社 縦型電界効果トランジスタ
US5396087A (en) * 1992-12-14 1995-03-07 North Carolina State University Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up
JPH06268227A (ja) * 1993-03-10 1994-09-22 Hitachi Ltd 絶縁ゲート型バイポーラトランジスタ
DE4315723C2 (de) * 1993-05-11 1995-10-05 Siemens Ag MOS-Halbleiterbauelement
JPH06334503A (ja) * 1993-05-24 1994-12-02 Nippondenso Co Ltd 縦型ｍｉｓトランジスタ
JP3307112B2 (ja) * 1994-09-21 2002-07-24 株式会社豊田中央研究所 半導体装置の製造方法
JP3325736B2 (ja) * 1995-02-09 2002-09-17 三菱電機株式会社 絶縁ゲート型半導体装置
JP3319215B2 (ja) * 1995-03-31 2002-08-26 株式会社豊田中央研究所 絶縁ゲート型半導体装置およびその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Jap. J. Appl. Phys., Vol. 33 (1994), pp.563-566 *
Solid State El., Vol.37, No.3, pp.507-514, 1994 *

Also Published As

Publication number Publication date
DE19522161A1 (de) 1997-01-09
US5703384A (en) 1997-12-30
DE59610322D1 (de) 2003-05-15
EP0750351B1 (de) 2003-04-09
JPH098304A (ja) 1997-01-10
EP0750351A2 (de) 1996-12-27
EP0750351A3 (enExample) 1997-02-05

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee