DE1942374A1 - Verfahren zur Schaffung Ohmscher Kontakte an verschiedenen Zonen einer Halbleiterscheibe - Google Patents

Verfahren zur Schaffung Ohmscher Kontakte an verschiedenen Zonen einer Halbleiterscheibe

Info

Publication number
DE1942374A1
DE1942374A1 DE19691942374 DE1942374A DE1942374A1 DE 1942374 A1 DE1942374 A1 DE 1942374A1 DE 19691942374 DE19691942374 DE 19691942374 DE 1942374 A DE1942374 A DE 1942374A DE 1942374 A1 DE1942374 A1 DE 1942374A1
Authority
DE
Germany
Prior art keywords
zone
layer
completely
semiconductor wafer
cover layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691942374
Other languages
German (de)
English (en)
Inventor
Bodway George E
Sanehiko Kakihana
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of DE1942374A1 publication Critical patent/DE1942374A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/147—Silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
DE19691942374 1968-08-20 1969-08-20 Verfahren zur Schaffung Ohmscher Kontakte an verschiedenen Zonen einer Halbleiterscheibe Pending DE1942374A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75404968A 1968-08-20 1968-08-20

Publications (1)

Publication Number Publication Date
DE1942374A1 true DE1942374A1 (de) 1970-02-26

Family

ID=25033279

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691942374 Pending DE1942374A1 (de) 1968-08-20 1969-08-20 Verfahren zur Schaffung Ohmscher Kontakte an verschiedenen Zonen einer Halbleiterscheibe

Country Status (5)

Country Link
US (1) US3571913A (enExample)
JP (1) JPS4914384B1 (enExample)
DE (1) DE1942374A1 (enExample)
FR (1) FR2015935B1 (enExample)
GB (2) GB1253092A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2083421A1 (enExample) * 1970-03-19 1971-12-17 Siemens Ag
FR2131930A1 (enExample) * 1971-04-05 1972-11-17 Rca Corp

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3754168A (en) * 1970-03-09 1973-08-21 Texas Instruments Inc Metal contact and interconnection system for nonhermetic enclosed semiconductor devices
US3943621A (en) * 1974-03-25 1976-03-16 General Electric Company Semiconductor device and method of manufacture therefor
US4109372A (en) * 1977-05-02 1978-08-29 International Business Machines Corporation Method for making an insulated gate field effect transistor utilizing a silicon gate and silicide interconnection vias
US4354307A (en) * 1979-12-03 1982-10-19 Burroughs Corporation Method for mass producing miniature field effect transistors in high density LSI/VLSI chips
US4569722A (en) * 1984-11-23 1986-02-11 At&T Bell Laboratories Ethylene glycol etch for processes using metal silicides
JPH02231712A (ja) * 1989-03-03 1990-09-13 Mitsubishi Electric Corp 半導体装置の製造方法
US5773368A (en) * 1996-01-22 1998-06-30 Motorola, Inc. Method of etching adjacent layers
US20050218372A1 (en) * 2004-04-01 2005-10-06 Brask Justin K Modifying the viscosity of etchants
JP5734734B2 (ja) 2010-05-18 2015-06-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 半導体上に電流トラックを形成する方法
CN103980905B (zh) * 2014-05-07 2017-04-05 佛山市中山大学研究院 一种用于氧化物材料体系的蚀刻液及其蚀刻方法和应用

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370207A (en) * 1964-02-24 1968-02-20 Gen Electric Multilayer contact system for semiconductor devices including gold and copper layers
DE1521977B1 (de) * 1964-06-29 1969-09-11 Sperry Rand Corp Substanz und Verfahren zum Aetzen von Mustern mit m¦glichst geringer Unterätzung in Metalle
US3431636A (en) * 1964-11-12 1969-03-11 Texas Instruments Inc Method of making diffused semiconductor devices
FR1488678A (enExample) * 1965-08-21 1967-10-25
NL149638B (nl) * 1966-04-14 1976-05-17 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting bevattende ten minste een veldeffecttransistor, en halfgeleiderinrichting, vervaardigd volgens deze werkwijze.
US3391452A (en) * 1966-05-16 1968-07-09 Hewlett Packard Co Method of making a reliable low-ohmic nonrectifying connection to a semiconductor substrate
FR1536321A (fr) * 1966-06-30 1968-08-10 Texas Instruments Inc Contacts ohmiques pour des dispositifs à semi-conducteurs
US3432920A (en) * 1966-12-01 1969-03-18 Rca Corp Semiconductor devices and methods of making them
FR1546423A (fr) * 1966-12-09 1968-11-15 Kobe Ind Corp Dispositif à semi-conducteur
US3480841A (en) * 1967-01-13 1969-11-25 Ibm Solderable backside ohmic contact metal system for semiconductor devices and fabrication process therefor
US3449825A (en) * 1967-04-21 1969-06-17 Northern Electric Co Fabrication of semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2083421A1 (enExample) * 1970-03-19 1971-12-17 Siemens Ag
FR2131930A1 (enExample) * 1971-04-05 1972-11-17 Rca Corp

Also Published As

Publication number Publication date
GB1261160A (en) 1972-01-26
JPS4914384B1 (enExample) 1974-04-06
US3571913A (en) 1971-03-23
FR2015935B1 (enExample) 1974-05-24
FR2015935A1 (enExample) 1970-04-30
GB1253092A (enExample) 1971-11-10

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