DE1936143A1 - Verfahren zur Herstellung von Halbleiterelementen - Google Patents

Verfahren zur Herstellung von Halbleiterelementen

Info

Publication number
DE1936143A1
DE1936143A1 DE19691936143 DE1936143A DE1936143A1 DE 1936143 A1 DE1936143 A1 DE 1936143A1 DE 19691936143 DE19691936143 DE 19691936143 DE 1936143 A DE1936143 A DE 1936143A DE 1936143 A1 DE1936143 A1 DE 1936143A1
Authority
DE
Germany
Prior art keywords
disc
contact
main surfaces
ring
peripheral part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691936143
Other languages
German (de)
English (en)
Inventor
Garrett John Mansell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Publication of DE1936143A1 publication Critical patent/DE1936143A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/199—Anode base regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/959—Mechanical polishing of wafer

Landscapes

  • Braking Arrangements (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19691936143 1968-08-06 1969-07-16 Verfahren zur Herstellung von Halbleiterelementen Pending DE1936143A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB37377/68A GB1211627A (en) 1968-08-06 1968-08-06 Methods of manufacture of semiconductor elements and elements manufactured therby

Publications (1)

Publication Number Publication Date
DE1936143A1 true DE1936143A1 (de) 1970-02-12

Family

ID=10396001

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691936143 Pending DE1936143A1 (de) 1968-08-06 1969-07-16 Verfahren zur Herstellung von Halbleiterelementen

Country Status (7)

Country Link
US (1) US3611554A (https=)
JP (1) JPS4915912B1 (https=)
CH (1) CH512821A (https=)
DE (1) DE1936143A1 (https=)
FR (1) FR2016875B1 (https=)
GB (1) GB1211627A (https=)
NL (1) NL6911942A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2340107A1 (de) * 1973-07-06 1975-01-23 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3943547A (en) * 1970-12-26 1976-03-09 Hitachi, Ltd. Semiconductor device
US4110780A (en) * 1973-07-06 1978-08-29 Bbc Brown Boveri & Company, Limited Semiconductor power component
DE2340128C3 (de) * 1973-08-08 1982-08-12 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbauelement hoher Sperrfähigkeit
DE3137695A1 (de) * 1981-09-22 1983-04-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem mehrschichten-halbleiterkoerper mit pnpn-schichtfolge und verfahren zu seiner herstellung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1471981A (fr) * 1965-03-25 1967-03-03 Asea Ab Thyristor avec zone latérale à gorge
FR1479716A (fr) * 1965-05-11 1967-05-05 Itt Perfectionnements aux dispositifs à semi-conducteurs, tels que, par exemple, des thyristors de puissance

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2340107A1 (de) * 1973-07-06 1975-01-23 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement

Also Published As

Publication number Publication date
FR2016875A1 (https=) 1970-05-15
JPS4915912B1 (https=) 1974-04-18
NL6911942A (https=) 1970-02-10
FR2016875B1 (https=) 1975-01-10
US3611554A (en) 1971-10-12
GB1211627A (en) 1970-11-11
CH512821A (de) 1971-09-15

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