DE1928787A1 - Halbleiterelement - Google Patents
HalbleiterelementInfo
- Publication number
- DE1928787A1 DE1928787A1 DE19691928787 DE1928787A DE1928787A1 DE 1928787 A1 DE1928787 A1 DE 1928787A1 DE 19691928787 DE19691928787 DE 19691928787 DE 1928787 A DE1928787 A DE 1928787A DE 1928787 A1 DE1928787 A1 DE 1928787A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- semiconductor wafer
- semiconductor element
- recess
- conical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 33
- 230000007704 transition Effects 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1055368A CH485324A (de) | 1968-07-15 | 1968-07-15 | Halbleiterelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1928787A1 true DE1928787A1 (de) | 1970-11-12 |
Family
ID=4364431
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691928787 Pending DE1928787A1 (de) | 1968-07-15 | 1969-06-06 | Halbleiterelement |
| DE6922591U Expired DE6922591U (de) | 1968-07-15 | 1969-06-06 | Halbleiterelement |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE6922591U Expired DE6922591U (de) | 1968-07-15 | 1969-06-06 | Halbleiterelement |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT278907B (enrdf_load_stackoverflow) |
| CH (1) | CH485324A (enrdf_load_stackoverflow) |
| DE (2) | DE1928787A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2012977A7 (enrdf_load_stackoverflow) |
| GB (1) | GB1220315A (enrdf_load_stackoverflow) |
| NL (1) | NL6812691A (enrdf_load_stackoverflow) |
| SE (1) | SE354381B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3518863A1 (de) * | 1984-05-25 | 1985-11-28 | Mitsubishi Denki K.K., Tokio/Tokyo | Halbleitertablette mit verringerter oberflaechenfeldintensitaet |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10326578B4 (de) | 2003-06-12 | 2006-01-19 | Siltronic Ag | Verfahren zur Herstellung einer SOI-Scheibe |
-
1968
- 1968-07-15 CH CH1055368A patent/CH485324A/de not_active IP Right Cessation
- 1968-08-08 AT AT777368A patent/AT278907B/de not_active IP Right Cessation
- 1968-09-05 NL NL6812691A patent/NL6812691A/xx unknown
-
1969
- 1969-06-06 DE DE19691928787 patent/DE1928787A1/de active Pending
- 1969-06-06 DE DE6922591U patent/DE6922591U/de not_active Expired
- 1969-07-11 FR FR6923762A patent/FR2012977A7/fr not_active Expired
- 1969-07-14 GB GB35239/69A patent/GB1220315A/en not_active Expired
- 1969-07-14 SE SE09954/69A patent/SE354381B/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3518863A1 (de) * | 1984-05-25 | 1985-11-28 | Mitsubishi Denki K.K., Tokio/Tokyo | Halbleitertablette mit verringerter oberflaechenfeldintensitaet |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2012977A7 (enrdf_load_stackoverflow) | 1970-03-27 |
| SE354381B (enrdf_load_stackoverflow) | 1973-03-05 |
| DE6922591U (de) | 1971-03-18 |
| GB1220315A (en) | 1971-01-27 |
| NL6812691A (enrdf_load_stackoverflow) | 1970-01-19 |
| CH485324A (de) | 1970-01-31 |
| AT278907B (de) | 1970-02-25 |
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