FR2012977A7 - - Google Patents

Info

Publication number
FR2012977A7
FR2012977A7 FR6923762A FR6923762A FR2012977A7 FR 2012977 A7 FR2012977 A7 FR 2012977A7 FR 6923762 A FR6923762 A FR 6923762A FR 6923762 A FR6923762 A FR 6923762A FR 2012977 A7 FR2012977 A7 FR 2012977A7
Authority
FR
France
Prior art keywords
groove
region
regions
junction
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR6923762A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC BROWN BOVERI and CIE
BBC Brown Boveri AG Switzerland
Original Assignee
BBC BROWN BOVERI and CIE
Brown Boveri und Cie AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC BROWN BOVERI and CIE, Brown Boveri und Cie AG Switzerland filed Critical BBC BROWN BOVERI and CIE
Application granted granted Critical
Publication of FR2012977A7 publication Critical patent/FR2012977A7/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors

Landscapes

  • Thyristors (AREA)
FR6923762A 1968-07-15 1969-07-11 Expired FR2012977A7 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1055368A CH485324A (de) 1968-07-15 1968-07-15 Halbleiterelement

Publications (1)

Publication Number Publication Date
FR2012977A7 true FR2012977A7 (enrdf_load_stackoverflow) 1970-03-27

Family

ID=4364431

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6923762A Expired FR2012977A7 (enrdf_load_stackoverflow) 1968-07-15 1969-07-11

Country Status (7)

Country Link
AT (1) AT278907B (enrdf_load_stackoverflow)
CH (1) CH485324A (enrdf_load_stackoverflow)
DE (2) DE1928787A1 (enrdf_load_stackoverflow)
FR (1) FR2012977A7 (enrdf_load_stackoverflow)
GB (1) GB1220315A (enrdf_load_stackoverflow)
NL (1) NL6812691A (enrdf_load_stackoverflow)
SE (1) SE354381B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60250670A (ja) * 1984-05-25 1985-12-11 Mitsubishi Electric Corp 半導体装置
DE10326578B4 (de) 2003-06-12 2006-01-19 Siltronic Ag Verfahren zur Herstellung einer SOI-Scheibe

Also Published As

Publication number Publication date
SE354381B (enrdf_load_stackoverflow) 1973-03-05
DE6922591U (de) 1971-03-18
DE1928787A1 (de) 1970-11-12
GB1220315A (en) 1971-01-27
NL6812691A (enrdf_load_stackoverflow) 1970-01-19
CH485324A (de) 1970-01-31
AT278907B (de) 1970-02-25

Similar Documents

Publication Publication Date Title
NL134915C (enrdf_load_stackoverflow)
JPS5225713B1 (enrdf_load_stackoverflow)
GB1301192A (en) Semiconductor controlled rectifier device
ES393035A1 (es) Un dispositivo semiconductor.
GB1134019A (en) Improvements in semi-conductor devices
GB983266A (en) Semiconductor switching devices
FR2012977A7 (enrdf_load_stackoverflow)
GB1246864A (en) Transistor
GB1245765A (en) Surface diffused semiconductor devices
GB1098760A (en) Method of making semiconductor device
GB1335037A (en) Field effect transistor
GB1102197A (en) Semi-conductor elements
GB1073707A (en) A pnpn semi-conductor component
GB1007936A (en) Improvements in or relating to semiconductive devices
GB1140643A (en) Improvements in or relating to transistors
JPS4819113B1 (enrdf_load_stackoverflow)
GB1428742A (en) Semiconductor devices
GB1275498A (en) Semiconductor device
GB1031449A (en) Improvements in or relating to semiconductor elements
GB1206202A (en) Junction transistors
GB1148268A (en) Alloyed ohmic contacts in semiconductor material
ES332522A1 (es) Dispositivo transistor de alta tension.
GB1447989A (en) Semiconductor devices
GB1079197A (en) Semiconductor rectifier devices
GB723808A (en) Signal translating devices utilizing semiconductive bodies

Legal Events

Date Code Title Description
ST Notification of lapse