DE1927585C3 - Transistor mit lateraler Emitterzone und gleichdotierter lateraler Kollektorzone - Google Patents

Transistor mit lateraler Emitterzone und gleichdotierter lateraler Kollektorzone

Info

Publication number
DE1927585C3
DE1927585C3 DE1927585A DE1927585A DE1927585C3 DE 1927585 C3 DE1927585 C3 DE 1927585C3 DE 1927585 A DE1927585 A DE 1927585A DE 1927585 A DE1927585 A DE 1927585A DE 1927585 C3 DE1927585 C3 DE 1927585C3
Authority
DE
Germany
Prior art keywords
zone
lateral
transistor
doped
substrate part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1927585A
Other languages
German (de)
English (en)
Other versions
DE1927585A1 (de
DE1927585B2 (de
Inventor
Werner Dipl.-Ing. 8000 Muenchen Hoehne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE1927585A priority Critical patent/DE1927585C3/de
Priority to NL7007290A priority patent/NL7007290A/xx
Priority to FR7019154A priority patent/FR2043813B1/fr
Priority to CH785370A priority patent/CH504785A/de
Priority to JP45045560A priority patent/JPS4813871B1/ja
Priority to GB25889/70A priority patent/GB1284015A/en
Priority to AT482270A priority patent/AT318711B/de
Priority to SE07585/70A priority patent/SE357641B/xx
Publication of DE1927585A1 publication Critical patent/DE1927585A1/de
Publication of DE1927585B2 publication Critical patent/DE1927585B2/de
Application granted granted Critical
Publication of DE1927585C3 publication Critical patent/DE1927585C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE1927585A 1969-05-30 1969-05-30 Transistor mit lateraler Emitterzone und gleichdotierter lateraler Kollektorzone Expired DE1927585C3 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE1927585A DE1927585C3 (de) 1969-05-30 1969-05-30 Transistor mit lateraler Emitterzone und gleichdotierter lateraler Kollektorzone
NL7007290A NL7007290A (enExample) 1969-05-30 1970-05-20
FR7019154A FR2043813B1 (enExample) 1969-05-30 1970-05-26
CH785370A CH504785A (de) 1969-05-30 1970-05-27 Transistor mit lateraler Emitterzone und lateraler Kollektorzone
JP45045560A JPS4813871B1 (enExample) 1969-05-30 1970-05-28
GB25889/70A GB1284015A (en) 1969-05-30 1970-05-29 Improvements in or relating to transistors
AT482270A AT318711B (de) 1969-05-30 1970-05-29 Transistor mit lateraler Emitterzone und lateraler Kollektorzone
SE07585/70A SE357641B (enExample) 1969-05-30 1970-06-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1927585A DE1927585C3 (de) 1969-05-30 1969-05-30 Transistor mit lateraler Emitterzone und gleichdotierter lateraler Kollektorzone

Publications (3)

Publication Number Publication Date
DE1927585A1 DE1927585A1 (de) 1971-02-04
DE1927585B2 DE1927585B2 (de) 1971-07-01
DE1927585C3 true DE1927585C3 (de) 1978-10-12

Family

ID=5735640

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1927585A Expired DE1927585C3 (de) 1969-05-30 1969-05-30 Transistor mit lateraler Emitterzone und gleichdotierter lateraler Kollektorzone

Country Status (8)

Country Link
JP (1) JPS4813871B1 (enExample)
AT (1) AT318711B (enExample)
CH (1) CH504785A (enExample)
DE (1) DE1927585C3 (enExample)
FR (1) FR2043813B1 (enExample)
GB (1) GB1284015A (enExample)
NL (1) NL7007290A (enExample)
SE (1) SE357641B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2516396C3 (de) * 1975-04-15 1981-11-19 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement mit einer Diode
FR2341232A1 (fr) * 1976-02-13 1977-09-09 Thomson Csf Element logique bistable
JPS52108564A (en) * 1976-03-09 1977-09-12 Agency Of Ind Science & Technol Rotary sifter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3411051A (en) * 1964-12-29 1968-11-12 Texas Instruments Inc Transistor with an isolated region having a p-n junction extending from the isolation wall to a surface

Also Published As

Publication number Publication date
FR2043813B1 (enExample) 1975-01-10
NL7007290A (enExample) 1970-12-02
JPS4813871B1 (enExample) 1973-05-01
GB1284015A (en) 1972-08-02
FR2043813A1 (enExample) 1971-02-19
AT318711B (de) 1974-11-11
CH504785A (de) 1971-03-15
DE1927585A1 (de) 1971-02-04
DE1927585B2 (de) 1971-07-01
SE357641B (enExample) 1973-07-02

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
EHJ Ceased/non-payment of the annual fee