FR2043813B1 - - Google Patents

Info

Publication number
FR2043813B1
FR2043813B1 FR7019154A FR7019154A FR2043813B1 FR 2043813 B1 FR2043813 B1 FR 2043813B1 FR 7019154 A FR7019154 A FR 7019154A FR 7019154 A FR7019154 A FR 7019154A FR 2043813 B1 FR2043813 B1 FR 2043813B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7019154A
Other languages
French (fr)
Other versions
FR2043813A1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of FR2043813A1 publication Critical patent/FR2043813A1/fr
Application granted granted Critical
Publication of FR2043813B1 publication Critical patent/FR2043813B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7019154A 1969-05-30 1970-05-26 Expired FR2043813B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1927585A DE1927585C3 (de) 1969-05-30 1969-05-30 Transistor mit lateraler Emitterzone und gleichdotierter lateraler Kollektorzone

Publications (2)

Publication Number Publication Date
FR2043813A1 FR2043813A1 (enExample) 1971-02-19
FR2043813B1 true FR2043813B1 (enExample) 1975-01-10

Family

ID=5735640

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7019154A Expired FR2043813B1 (enExample) 1969-05-30 1970-05-26

Country Status (8)

Country Link
JP (1) JPS4813871B1 (enExample)
AT (1) AT318711B (enExample)
CH (1) CH504785A (enExample)
DE (1) DE1927585C3 (enExample)
FR (1) FR2043813B1 (enExample)
GB (1) GB1284015A (enExample)
NL (1) NL7007290A (enExample)
SE (1) SE357641B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2516396C3 (de) * 1975-04-15 1981-11-19 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement mit einer Diode
FR2341232A1 (fr) * 1976-02-13 1977-09-09 Thomson Csf Element logique bistable
JPS52108564A (en) * 1976-03-09 1977-09-12 Agency Of Ind Science & Technol Rotary sifter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3411051A (en) * 1964-12-29 1968-11-12 Texas Instruments Inc Transistor with an isolated region having a p-n junction extending from the isolation wall to a surface

Also Published As

Publication number Publication date
NL7007290A (enExample) 1970-12-02
JPS4813871B1 (enExample) 1973-05-01
GB1284015A (en) 1972-08-02
FR2043813A1 (enExample) 1971-02-19
AT318711B (de) 1974-11-11
CH504785A (de) 1971-03-15
DE1927585C3 (de) 1978-10-12
DE1927585A1 (de) 1971-02-04
DE1927585B2 (de) 1971-07-01
SE357641B (enExample) 1973-07-02

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Legal Events

Date Code Title Description
ST Notification of lapse