DE1915692A1 - Verfahren zur Dotierung der Halbleiterkristalle und Halbleiterschichten - Google Patents

Verfahren zur Dotierung der Halbleiterkristalle und Halbleiterschichten

Info

Publication number
DE1915692A1
DE1915692A1 DE19691915692 DE1915692A DE1915692A1 DE 1915692 A1 DE1915692 A1 DE 1915692A1 DE 19691915692 DE19691915692 DE 19691915692 DE 1915692 A DE1915692 A DE 1915692A DE 1915692 A1 DE1915692 A1 DE 1915692A1
Authority
DE
Germany
Prior art keywords
doping
semiconductor
crystals
layers
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691915692
Other languages
German (de)
English (en)
Inventor
Stanislav Hermanek
Jaromir Mikusek
Jaromir Plecek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Czech Academy of Sciences CAS
Original Assignee
Czech Academy of Sciences CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Czech Academy of Sciences CAS filed Critical Czech Academy of Sciences CAS
Publication of DE1915692A1 publication Critical patent/DE1915692A1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
DE19691915692 1968-04-01 1969-03-27 Verfahren zur Dotierung der Halbleiterkristalle und Halbleiterschichten Pending DE1915692A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CS244768 1968-04-01

Publications (1)

Publication Number Publication Date
DE1915692A1 true DE1915692A1 (de) 1969-12-18

Family

ID=5361638

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691915692 Pending DE1915692A1 (de) 1968-04-01 1969-03-27 Verfahren zur Dotierung der Halbleiterkristalle und Halbleiterschichten

Country Status (4)

Country Link
JP (1) JPS492787B1 (enrdf_load_stackoverflow)
DE (1) DE1915692A1 (enrdf_load_stackoverflow)
GB (1) GB1258125A (enrdf_load_stackoverflow)
NL (1) NL6904893A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6686595B2 (en) * 2002-06-26 2004-02-03 Semequip Inc. Electron impact ion source
KR100788474B1 (ko) 2002-06-26 2007-12-24 세미이큅, 인코포레이티드 자기 요크 어셈블리
WO2016133205A1 (ja) 2015-02-20 2016-08-25 株式会社日立製作所 磁場調整方法

Also Published As

Publication number Publication date
JPS492787B1 (enrdf_load_stackoverflow) 1974-01-22
NL6904893A (enrdf_load_stackoverflow) 1969-10-03
GB1258125A (enrdf_load_stackoverflow) 1971-12-22

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