DE1816081A1 - Integrierte Halbleiterschaltungsanordnung - Google Patents

Integrierte Halbleiterschaltungsanordnung

Info

Publication number
DE1816081A1
DE1816081A1 DE19681816081 DE1816081A DE1816081A1 DE 1816081 A1 DE1816081 A1 DE 1816081A1 DE 19681816081 DE19681816081 DE 19681816081 DE 1816081 A DE1816081 A DE 1816081A DE 1816081 A1 DE1816081 A1 DE 1816081A1
Authority
DE
Germany
Prior art keywords
zone
transistor
collector
shaped area
sequence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19681816081
Other languages
German (de)
English (en)
Inventor
Dr-Phys Heinz Dorendorf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19681816081 priority Critical patent/DE1816081A1/de
Priority to NL6915025A priority patent/NL6915025A/xx
Priority to CH1869969A priority patent/CH504110A/de
Priority to FR6943697A priority patent/FR2026660A1/fr
Publication of DE1816081A1 publication Critical patent/DE1816081A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE19681816081 1968-12-20 1968-12-20 Integrierte Halbleiterschaltungsanordnung Pending DE1816081A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19681816081 DE1816081A1 (de) 1968-12-20 1968-12-20 Integrierte Halbleiterschaltungsanordnung
NL6915025A NL6915025A (https=) 1968-12-20 1969-10-03
CH1869969A CH504110A (de) 1968-12-20 1969-12-16 Integrierte Halbleiterschaltung
FR6943697A FR2026660A1 (https=) 1968-12-20 1969-12-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681816081 DE1816081A1 (de) 1968-12-20 1968-12-20 Integrierte Halbleiterschaltungsanordnung

Publications (1)

Publication Number Publication Date
DE1816081A1 true DE1816081A1 (de) 1970-06-25

Family

ID=5716944

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681816081 Pending DE1816081A1 (de) 1968-12-20 1968-12-20 Integrierte Halbleiterschaltungsanordnung

Country Status (4)

Country Link
CH (1) CH504110A (https=)
DE (1) DE1816081A1 (https=)
FR (1) FR2026660A1 (https=)
NL (1) NL6915025A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4232328A (en) * 1978-12-20 1980-11-04 Bell Telephone Laboratories, Incorporated Dielectrically-isolated integrated circuit complementary transistors for high voltage use

Also Published As

Publication number Publication date
FR2026660A1 (https=) 1970-09-18
CH504110A (de) 1971-02-28
NL6915025A (https=) 1970-06-23

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