DE1816081A1 - Integrierte Halbleiterschaltungsanordnung - Google Patents
Integrierte HalbleiterschaltungsanordnungInfo
- Publication number
- DE1816081A1 DE1816081A1 DE19681816081 DE1816081A DE1816081A1 DE 1816081 A1 DE1816081 A1 DE 1816081A1 DE 19681816081 DE19681816081 DE 19681816081 DE 1816081 A DE1816081 A DE 1816081A DE 1816081 A1 DE1816081 A1 DE 1816081A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- transistor
- collector
- shaped area
- sequence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 9
- 230000000295 complement effect Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 102000004207 Neuropilin-1 Human genes 0.000 description 1
- 108090000772 Neuropilin-1 Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681816081 DE1816081A1 (de) | 1968-12-20 | 1968-12-20 | Integrierte Halbleiterschaltungsanordnung |
| NL6915025A NL6915025A (enrdf_load_stackoverflow) | 1968-12-20 | 1969-10-03 | |
| CH1869969A CH504110A (de) | 1968-12-20 | 1969-12-16 | Integrierte Halbleiterschaltung |
| FR6943697A FR2026660A1 (enrdf_load_stackoverflow) | 1968-12-20 | 1969-12-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681816081 DE1816081A1 (de) | 1968-12-20 | 1968-12-20 | Integrierte Halbleiterschaltungsanordnung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1816081A1 true DE1816081A1 (de) | 1970-06-25 |
Family
ID=5716944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19681816081 Pending DE1816081A1 (de) | 1968-12-20 | 1968-12-20 | Integrierte Halbleiterschaltungsanordnung |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH504110A (enrdf_load_stackoverflow) |
| DE (1) | DE1816081A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2026660A1 (enrdf_load_stackoverflow) |
| NL (1) | NL6915025A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4232328A (en) * | 1978-12-20 | 1980-11-04 | Bell Telephone Laboratories, Incorporated | Dielectrically-isolated integrated circuit complementary transistors for high voltage use |
-
1968
- 1968-12-20 DE DE19681816081 patent/DE1816081A1/de active Pending
-
1969
- 1969-10-03 NL NL6915025A patent/NL6915025A/xx unknown
- 1969-12-16 CH CH1869969A patent/CH504110A/de not_active IP Right Cessation
- 1969-12-17 FR FR6943697A patent/FR2026660A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| CH504110A (de) | 1971-02-28 |
| NL6915025A (enrdf_load_stackoverflow) | 1970-06-23 |
| FR2026660A1 (enrdf_load_stackoverflow) | 1970-09-18 |
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