DE1800578C3 - Strahlungsdetektor - Google Patents

Strahlungsdetektor

Info

Publication number
DE1800578C3
DE1800578C3 DE1800578A DE1800578A DE1800578C3 DE 1800578 C3 DE1800578 C3 DE 1800578C3 DE 1800578 A DE1800578 A DE 1800578A DE 1800578 A DE1800578 A DE 1800578A DE 1800578 C3 DE1800578 C3 DE 1800578C3
Authority
DE
Germany
Prior art keywords
layer
plate
detector
resistance
specific resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1800578A
Other languages
German (de)
English (en)
Other versions
DE1800578B2 (de
DE1800578A1 (de
Inventor
Johannes Rame-Caen Meuleman (Frankreich)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1800578A1 publication Critical patent/DE1800578A1/de
Publication of DE1800578B2 publication Critical patent/DE1800578B2/de
Application granted granted Critical
Publication of DE1800578C3 publication Critical patent/DE1800578C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/298—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation the devices being characterised by field-effect operation, e.g. MIS type detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Radiation Pyrometers (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE1800578A 1967-10-09 1968-10-02 Strahlungsdetektor Expired DE1800578C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR123745A FR1546686A (fr) 1967-10-09 1967-10-09 Détecteur pour la localisation de particules et son procédé de fabrication

Publications (3)

Publication Number Publication Date
DE1800578A1 DE1800578A1 (de) 1969-10-16
DE1800578B2 DE1800578B2 (de) 1978-02-09
DE1800578C3 true DE1800578C3 (de) 1978-10-19

Family

ID=8639732

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1800578A Expired DE1800578C3 (de) 1967-10-09 1968-10-02 Strahlungsdetektor

Country Status (5)

Country Link
US (1) US3582654A (enExample)
JP (1) JPS4725400B1 (enExample)
DE (1) DE1800578C3 (enExample)
FR (1) FR1546686A (enExample)
GB (1) GB1239255A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3971057A (en) * 1973-08-21 1976-07-20 The United States Of America As Represented By The Secretary Of The Navy Lateral photodetector of improved sensitivity
US3870887A (en) * 1973-10-10 1975-03-11 Mc Donnell Douglas Corp Optical image position indicator means using time and phase delay sensing
US4243885A (en) * 1979-09-25 1981-01-06 The United States Of America As Represented By The United States Department Of Energy Cadmium telluride photovoltaic radiation detector
DD151242A1 (de) * 1980-06-02 1981-10-08 Hartmut Reinhardt Halbleiter-sperrschicht-detektor
DE10308626B4 (de) * 2003-02-27 2015-02-19 Ketek Gmbh Verfahren zur Herstellung von Halbleiter-Strahlungsdetektoren und Halbleiter-Strahlungsdetektor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3152939A (en) * 1960-08-12 1964-10-13 Westinghouse Electric Corp Process for preparing semiconductor members
US3117229A (en) * 1960-10-03 1964-01-07 Solid State Radiations Inc Solid state radiation detector with separate ohmic contacts to reduce leakage current
US3225198A (en) * 1961-05-16 1965-12-21 Hughes Aircraft Co Method of measuring nuclear radiation utilizing a semiconductor crystal having a lithium compensated intrinsic region
US3396318A (en) * 1966-09-16 1968-08-06 Electro Nuclear Lab Inc Charged particle detector with lithium compensated intrinsic silicon as an intermediate region

Also Published As

Publication number Publication date
DE1800578B2 (de) 1978-02-09
DE1800578A1 (de) 1969-10-16
GB1239255A (enExample) 1971-07-14
FR1546686A (fr) 1968-11-22
US3582654A (en) 1971-06-01
JPS4725400B1 (enExample) 1972-07-11

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee