DE1800212A1 - Verfahren zum Herstellen einer Halbleiteranordnung - Google Patents
Verfahren zum Herstellen einer HalbleiteranordnungInfo
- Publication number
- DE1800212A1 DE1800212A1 DE19681800212 DE1800212A DE1800212A1 DE 1800212 A1 DE1800212 A1 DE 1800212A1 DE 19681800212 DE19681800212 DE 19681800212 DE 1800212 A DE1800212 A DE 1800212A DE 1800212 A1 DE1800212 A1 DE 1800212A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- base
- alloyed
- semiconductor body
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000011888 foil Substances 0.000 claims description 18
- 238000010894 electron beam technology Methods 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- VJRVSSUCOHZSHP-UHFFFAOYSA-N [As].[Au] Chemical compound [As].[Au] VJRVSSUCOHZSHP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- OPEKUPPJGIMIDT-UHFFFAOYSA-N boron gold Chemical compound [B].[Au] OPEKUPPJGIMIDT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 230000033764 rhythmic process Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 230000000873 masking effect Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Cold Cathode And The Manufacture (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681800212 DE1800212A1 (de) | 1968-10-01 | 1968-10-01 | Verfahren zum Herstellen einer Halbleiteranordnung |
| GB1234544D GB1234544A (US20020095090A1-20020718-M00002.png) | 1968-10-01 | 1969-10-01 | |
| US862776A US3629017A (en) | 1968-10-01 | 1969-10-01 | Method of producing a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681800212 DE1800212A1 (de) | 1968-10-01 | 1968-10-01 | Verfahren zum Herstellen einer Halbleiteranordnung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1800212A1 true DE1800212A1 (de) | 1970-05-06 |
Family
ID=5709157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19681800212 Pending DE1800212A1 (de) | 1968-10-01 | 1968-10-01 | Verfahren zum Herstellen einer Halbleiteranordnung |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3629017A (US20020095090A1-20020718-M00002.png) |
| DE (1) | DE1800212A1 (US20020095090A1-20020718-M00002.png) |
| GB (1) | GB1234544A (US20020095090A1-20020718-M00002.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2406304A1 (fr) * | 1977-10-11 | 1979-05-11 | Fujitsu Ltd | Procede et appareil d'etablissement d'un contact electrique par decharge avec une plaquette semi-conductrice |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3895977A (en) * | 1973-12-20 | 1975-07-22 | Harris Corp | Method of fabricating a bipolar transistor |
| US4364778A (en) * | 1980-05-30 | 1982-12-21 | Bell Telephone Laboratories, Incorporated | Formation of multilayer dopant distributions in a semiconductor |
| US4525733A (en) * | 1982-03-03 | 1985-06-25 | Eastman Kodak Company | Patterning method for reducing hillock density in thin metal films and a structure produced thereby |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1527116A (fr) * | 1967-04-18 | 1968-05-31 | Cit Alcatel | Procédé de fabrication des diodes par impulsions électriques |
-
1968
- 1968-10-01 DE DE19681800212 patent/DE1800212A1/de active Pending
-
1969
- 1969-10-01 US US862776A patent/US3629017A/en not_active Expired - Lifetime
- 1969-10-01 GB GB1234544D patent/GB1234544A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2406304A1 (fr) * | 1977-10-11 | 1979-05-11 | Fujitsu Ltd | Procede et appareil d'etablissement d'un contact electrique par decharge avec une plaquette semi-conductrice |
Also Published As
| Publication number | Publication date |
|---|---|
| US3629017A (en) | 1971-12-21 |
| GB1234544A (US20020095090A1-20020718-M00002.png) | 1971-06-03 |
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