DE1789206C3 - Feldeffekt-Transistor - Google Patents

Feldeffekt-Transistor

Info

Publication number
DE1789206C3
DE1789206C3 DE1789206A DE1789206A DE1789206C3 DE 1789206 C3 DE1789206 C3 DE 1789206C3 DE 1789206 A DE1789206 A DE 1789206A DE 1789206 A DE1789206 A DE 1789206A DE 1789206 C3 DE1789206 C3 DE 1789206C3
Authority
DE
Germany
Prior art keywords
layer
substrate
field effect
effect transistor
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1789206A
Other languages
German (de)
English (en)
Inventor
Andrew Francis Crawley Sussex Beer
Nigel Malcolm St. John Redhill Surrey Murphy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE1789206C3 publication Critical patent/DE1789206C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
DE1789206A 1965-06-18 1966-06-18 Feldeffekt-Transistor Expired DE1789206C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB25874/65A GB1153428A (en) 1965-06-18 1965-06-18 Improvements in Semiconductor Devices.

Publications (1)

Publication Number Publication Date
DE1789206C3 true DE1789206C3 (de) 1984-02-02

Family

ID=10234780

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1789206A Expired DE1789206C3 (de) 1965-06-18 1966-06-18 Feldeffekt-Transistor
DE1564411A Expired DE1564411C3 (de) 1965-06-18 1966-06-18 Feldeffekt-Transistor

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1564411A Expired DE1564411C3 (de) 1965-06-18 1966-06-18 Feldeffekt-Transistor

Country Status (10)

Country Link
US (1) US3745425A (enExample)
AT (1) AT263084B (enExample)
BE (1) BE682752A (enExample)
CH (1) CH466434A (enExample)
DE (2) DE1789206C3 (enExample)
DK (1) DK119016B (enExample)
ES (1) ES327989A1 (enExample)
GB (1) GB1153428A (enExample)
NL (1) NL156268B (enExample)
SE (1) SE344656B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung
DE2000093C2 (de) * 1970-01-02 1982-04-01 6000 Frankfurt Licentia Patent-Verwaltungs-Gmbh Feldeffekttransistor
JPS4936514B1 (enExample) * 1970-05-13 1974-10-01
JPS5123432B2 (enExample) * 1971-08-26 1976-07-16
US3927418A (en) * 1971-12-11 1975-12-16 Sony Corp Charge transfer device
JPS5024084A (enExample) * 1973-07-05 1975-03-14
DE2812049C2 (de) * 1974-09-20 1982-05-27 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
US4011105A (en) * 1975-09-15 1977-03-08 Mos Technology, Inc. Field inversion control for n-channel device integrated circuits
GB1569897A (en) * 1975-12-31 1980-06-25 Ibm Field effect transistor
JPS52131483A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Mis-type semiconductor device
NL7606483A (nl) * 1976-06-16 1977-12-20 Philips Nv Inrichting voor het mengen van signalen.
US4350991A (en) * 1978-01-06 1982-09-21 International Business Machines Corp. Narrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitance
JPS54125986A (en) * 1978-03-23 1979-09-29 Handotai Kenkyu Shinkokai Semiconductor including insulated gate type transistor
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
JPS55156370A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Manufacture of semiconductor device
US5348898A (en) * 1979-05-25 1994-09-20 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
JPS56155572A (en) * 1980-04-30 1981-12-01 Sanyo Electric Co Ltd Insulated gate field effect type semiconductor device
DE3208500A1 (de) * 1982-03-09 1983-09-15 Siemens AG, 1000 Berlin und 8000 München Spannungsfester mos-transistor fuer hoechstintegrierte schaltungen
EP0122313B1 (de) * 1983-04-18 1987-01-07 Deutsche ITT Industries GmbH Verfahren zum Herstellen einer monolithisch integrierten Schaltung mit mindestens einem integrierten Isolierschicht-Feldeffekttransistor
JPS60123055A (ja) * 1983-12-07 1985-07-01 Fujitsu Ltd 半導体装置及びその製造方法
WO1991001569A1 (fr) * 1989-07-14 1991-02-07 Seiko Instruments Inc. Dispositif a semi-conducteurs et procede de production
KR960002100B1 (ko) * 1993-03-27 1996-02-10 삼성전자주식회사 전하결합소자형 이미지센서
DE4415568C2 (de) * 1994-05-03 1996-03-07 Siemens Ag Herstellungsverfahren für MOSFETs mit LDD
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE637064A (enExample) * 1962-09-07 Rca Corp
US2791758A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive translating device
US2869055A (en) * 1957-09-20 1959-01-13 Beckman Instruments Inc Field effect transistor
US3056888A (en) * 1960-08-17 1962-10-02 Bell Telephone Labor Inc Semiconductor triode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2791758A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive translating device
US2869055A (en) * 1957-09-20 1959-01-13 Beckman Instruments Inc Field effect transistor
US3056888A (en) * 1960-08-17 1962-10-02 Bell Telephone Labor Inc Semiconductor triode
BE637064A (enExample) * 1962-09-07 Rca Corp

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
DE-Pat.Anm. S. 32 766 VIIIc/21g vom 15.11.1956 *
In Betracht gezogenes älteres Patent: DE-PS 15 64 151 *
Proc. IEEE, Aug. 1964, S. 985,986 *
Proc. IEEE, Sept. 1963, S. 1190-1202 *
The Bell System Technical Journal, Bd. 39, 1960, S. 933-946 *

Also Published As

Publication number Publication date
AT263084B (de) 1968-07-10
BE682752A (enExample) 1966-12-19
NL6608260A (enExample) 1966-12-19
GB1153428A (en) 1969-05-29
NL156268B (nl) 1978-03-15
DK119016B (da) 1970-11-02
US3745425A (en) 1973-07-10
ES327989A1 (es) 1967-04-01
DE1564411A1 (de) 1969-07-24
DE1564411B2 (de) 1973-10-31
CH466434A (de) 1968-12-15
SE344656B (enExample) 1972-04-24
DE1564411C3 (de) 1981-02-05

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Legal Events

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Free format text: BEAL, JULIAN ROBERT ANTHONY, RYGATE, SURREY, GB BEER, ANDREW FRANCIS, CRAWLEY, SUSSEX, GB KLEIN, THOMAS, PALO ALTO, CALIF., US MURPHY, NIGEL MALCOLM ST. JOHN, REDHILL, SURREY, GB

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