DE1772500A1 - Metallische Abdeckfilme zum AEtzen von Oxyden - Google Patents

Metallische Abdeckfilme zum AEtzen von Oxyden

Info

Publication number
DE1772500A1
DE1772500A1 DE19681772500 DE1772500A DE1772500A1 DE 1772500 A1 DE1772500 A1 DE 1772500A1 DE 19681772500 DE19681772500 DE 19681772500 DE 1772500 A DE1772500 A DE 1772500A DE 1772500 A1 DE1772500 A1 DE 1772500A1
Authority
DE
Germany
Prior art keywords
layer
substrate
silicon dioxide
metal layer
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19681772500
Other languages
German (de)
English (en)
Inventor
Schaefer Donald Louis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE1772500A1 publication Critical patent/DE1772500A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
DE19681772500 1967-05-29 1968-05-24 Metallische Abdeckfilme zum AEtzen von Oxyden Pending DE1772500A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64190267A 1967-05-29 1967-05-29

Publications (1)

Publication Number Publication Date
DE1772500A1 true DE1772500A1 (de) 1971-12-30

Family

ID=24574329

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681772500 Pending DE1772500A1 (de) 1967-05-29 1968-05-24 Metallische Abdeckfilme zum AEtzen von Oxyden

Country Status (4)

Country Link
US (1) US3483108A (enExample)
DE (1) DE1772500A1 (enExample)
FR (1) FR1570763A (enExample)
GB (1) GB1220364A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3867272A (en) * 1970-06-30 1975-02-18 Hughes Aircraft Co Electrolytic anticompromise apparatus
DE2117199C3 (de) * 1971-04-08 1974-08-22 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur Herstellung geätzter Muster in dünnen Schichten mit definierten Kantenprofilen
IT947673B (it) * 1971-04-16 1973-05-30 Ibm Procedimento atto a impedire o at tenuare l autodrogaggio o diffusio ne spontanea di impurita in dispo sitivi semiconduttori
US3769109A (en) * 1972-04-19 1973-10-30 Bell Telephone Labor Inc PRODUCTION OF SiO{11 {11 TAPERED FILMS
US4054497A (en) * 1975-10-06 1977-10-18 Honeywell Inc. Method for electrolytically etching semiconductor material
NL7607298A (nl) * 1976-07-02 1978-01-04 Philips Nv Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd volgens de werkwijze.
US4098638A (en) * 1977-06-14 1978-07-04 Westinghouse Electric Corp. Methods for making a sloped insulator for solid state devices
US4439270A (en) * 1983-08-08 1984-03-27 International Business Machines Corporation Process for the controlled etching of tapered vias in borosilicate glass dielectrics
US6027632A (en) * 1996-03-05 2000-02-22 Candescent Technologies Corporation Multi-step removal of excess emitter material in fabricating electron-emitting device
US5766446A (en) * 1996-03-05 1998-06-16 Candescent Technologies Corporation Electrochemical removal of material, particularly excess emitter material in electron-emitting device
US5893967A (en) * 1996-03-05 1999-04-13 Candescent Technologies Corporation Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device
US6120674A (en) * 1997-06-30 2000-09-19 Candescent Technologies Corporation Electrochemical removal of material in electron-emitting device
US6007695A (en) * 1997-09-30 1999-12-28 Candescent Technologies Corporation Selective removal of material using self-initiated galvanic activity in electrolytic bath

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB586003A (en) * 1944-03-25 1947-03-04 Kodak Ltd Method of making diaphragms wholly or partly of metal
US2656496A (en) * 1951-07-31 1953-10-20 Bell Telephone Labor Inc Semiconductor translating device
US3245313A (en) * 1961-02-23 1966-04-12 Philco Corp Light modulating means employing a self-erasing plating solution
US3346384A (en) * 1963-04-25 1967-10-10 Gen Electric Metal image formation
US3423262A (en) * 1964-11-23 1969-01-21 Westinghouse Electric Corp Electrophoretic treatment of photoresist for microcircuity
US3405017A (en) * 1965-02-26 1968-10-08 Hughes Aircraft Co Use of organosilicon subbing layer in photoresist method for obtaining fine patterns for microcircuitry

Also Published As

Publication number Publication date
FR1570763A (enExample) 1969-06-13
US3483108A (en) 1969-12-09
GB1220364A (en) 1971-01-27

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