IT947673B - Procedimento atto a impedire o at tenuare l autodrogaggio o diffusio ne spontanea di impurita in dispo sitivi semiconduttori - Google Patents

Procedimento atto a impedire o at tenuare l autodrogaggio o diffusio ne spontanea di impurita in dispo sitivi semiconduttori

Info

Publication number
IT947673B
IT947673B IT2071272A IT2071272A IT947673B IT 947673 B IT947673 B IT 947673B IT 2071272 A IT2071272 A IT 2071272A IT 2071272 A IT2071272 A IT 2071272A IT 947673 B IT947673 B IT 947673B
Authority
IT
Italy
Prior art keywords
sitive
semiconductive
impurities
keeping
drop
Prior art date
Application number
IT2071272A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT947673B publication Critical patent/IT947673B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
IT2071272A 1971-04-16 1972-02-18 Procedimento atto a impedire o at tenuare l autodrogaggio o diffusio ne spontanea di impurita in dispo sitivi semiconduttori IT947673B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13456671A 1971-04-16 1971-04-16

Publications (1)

Publication Number Publication Date
IT947673B true IT947673B (it) 1973-05-30

Family

ID=22463938

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2071272A IT947673B (it) 1971-04-16 1972-02-18 Procedimento atto a impedire o at tenuare l autodrogaggio o diffusio ne spontanea di impurita in dispo sitivi semiconduttori

Country Status (6)

Country Link
JP (1) JPS5029788B1 (it)
CA (1) CA960943A (it)
DE (1) DE2214996A1 (it)
FR (1) FR2133598B1 (it)
GB (1) GB1314149A (it)
IT (1) IT947673B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5627935A (en) * 1979-08-15 1981-03-18 Toshiba Corp Semiconductor device
WO2004064131A2 (de) * 2003-01-10 2004-07-29 Infineon Technologies Ag Verfahren zur epitaktischen abscheidung von schichten
CN107532258B (zh) 2015-06-15 2019-05-28 新日铁住金株式会社 高Cr系奥氏体不锈钢

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3483108A (en) * 1967-05-29 1969-12-09 Gen Electric Method of chemically etching a non-conductive material using an electrolytically controlled mask

Also Published As

Publication number Publication date
GB1314149A (en) 1973-04-18
FR2133598B1 (it) 1976-06-11
JPS5029788B1 (it) 1975-09-26
CA960943A (en) 1975-01-14
DE2214996A1 (de) 1972-10-26
FR2133598A1 (it) 1972-12-01

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