DE1771301B1 - Verfahren zum aetzen und polieren von gegenstaenden aus halbleitendem material - Google Patents

Verfahren zum aetzen und polieren von gegenstaenden aus halbleitendem material

Info

Publication number
DE1771301B1
DE1771301B1 DE19681771301 DE1771301A DE1771301B1 DE 1771301 B1 DE1771301 B1 DE 1771301B1 DE 19681771301 DE19681771301 DE 19681771301 DE 1771301 A DE1771301 A DE 1771301A DE 1771301 B1 DE1771301 B1 DE 1771301B1
Authority
DE
Germany
Prior art keywords
fluorine
halogen compound
etching
gaseous
objects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19681771301
Other languages
German (de)
English (en)
Inventor
Hays Robert Guy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE1771301B1 publication Critical patent/DE1771301B1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/054—Flat sheets-substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Sealing Of Bearings (AREA)
DE19681771301 1967-05-08 1968-05-03 Verfahren zum aetzen und polieren von gegenstaenden aus halbleitendem material Pending DE1771301B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US63693867A 1967-05-08 1967-05-08
US63692867A 1967-05-08 1967-05-08

Publications (1)

Publication Number Publication Date
DE1771301B1 true DE1771301B1 (de) 1971-10-07

Family

ID=27092726

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681771301 Pending DE1771301B1 (de) 1967-05-08 1968-05-03 Verfahren zum aetzen und polieren von gegenstaenden aus halbleitendem material

Country Status (6)

Country Link
US (2) US3511727A (enExample)
BE (1) BE714771A (enExample)
DE (1) DE1771301B1 (enExample)
FR (1) FR1563406A (enExample)
GB (1) GB1180187A (enExample)
NL (1) NL6806497A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3345353A1 (de) * 1983-12-15 1985-08-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und metallisierung einer keramikoberflaeche

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NL7003431A (enExample) * 1970-03-11 1971-09-14
US3816166A (en) * 1970-03-11 1974-06-11 Philips Corp Vapor depositing method
FR2130353A1 (en) * 1971-03-19 1972-11-03 Itt Gas-etching for silicon nitride deposits - by glow discharge technique
FR2138539B1 (enExample) * 1971-05-27 1973-05-25 Alsthom
US3900363A (en) * 1972-11-15 1975-08-19 Nippon Columbia Method of making crystal
LU67513A1 (enExample) * 1972-11-20 1973-07-13
US3854443A (en) * 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
US3964124A (en) * 1974-12-30 1976-06-22 Midwest-Precision Corporation Sealed caster
US4243865A (en) * 1976-05-14 1981-01-06 Data General Corporation Process for treating material in plasma environment
US4348784A (en) * 1980-06-23 1982-09-14 Stewart-Warner Corporation Swivel type caster with seal and lubrication ring
US4421576A (en) * 1981-09-14 1983-12-20 Rca Corporation Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
US4494271A (en) * 1981-11-30 1985-01-22 Perlin Materials Handling Development Co. Caster having a three piece encapsulating bearing assembly
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
US4738272A (en) * 1984-05-21 1988-04-19 Mcconnell Christopher F Vessel and system for treating wafers with fluids
FR2574816B1 (fr) * 1984-12-14 1987-02-20 Cogema Procede de fabrication de pieces en forme par elimination chimique selective d'un noyau
US5159267A (en) * 1990-09-28 1992-10-27 Sematech, Inc. Pneumatic energy fluxmeter
US5159264A (en) * 1991-10-02 1992-10-27 Sematech, Inc. Pneumatic energy fluxmeter
US5461753A (en) * 1993-10-22 1995-10-31 Albion Industries, Inc. Seal for swivel caster assembly
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films
JPH0864559A (ja) * 1994-06-14 1996-03-08 Fsi Internatl Inc 基板面から不要な物質を除去する方法
US6015503A (en) * 1994-06-14 2000-01-18 Fsi International, Inc. Method and apparatus for surface conditioning
US5479677A (en) * 1994-09-07 1996-01-02 Chong; Ping-Feng Caster device
US5635102A (en) 1994-09-28 1997-06-03 Fsi International Highly selective silicon oxide etching method
US6849471B2 (en) 2003-03-28 2005-02-01 Reflectivity, Inc. Barrier layers for microelectromechanical systems
DE19681602T1 (de) * 1995-10-19 1998-11-26 Massachusetts Inst Technology Verfahren zum Entfernen von Metall
US5817174A (en) * 1995-12-15 1998-10-06 Kabushiki Kaisha Toshiba Semiconductor substrate and method of treating semiconductor substrate
US7025831B1 (en) 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
US6077451A (en) * 1996-03-28 2000-06-20 Kabushiki Kaisha Toshiba Method and apparatus for etching of silicon materials
JP3055471B2 (ja) * 1996-10-03 2000-06-26 日本電気株式会社 半導体基板の製造方法及びその製造装置
US5954884A (en) * 1997-03-17 1999-09-21 Fsi International Inc. UV/halogen metals removal process
US6165273A (en) 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
US6465374B1 (en) 1997-10-21 2002-10-15 Fsi International, Inc. Method of surface preparation
KR100271763B1 (ko) * 1997-12-05 2001-02-01 윤종용 폴리실리콘식각방법및그식각장치
US7041224B2 (en) * 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US6960305B2 (en) * 1999-10-26 2005-11-01 Reflectivity, Inc Methods for forming and releasing microelectromechanical structures
US6942811B2 (en) * 1999-10-26 2005-09-13 Reflectivity, Inc Method for achieving improved selectivity in an etching process
US6949202B1 (en) 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
US7019376B2 (en) * 2000-08-11 2006-03-28 Reflectivity, Inc Micromirror array device with a small pitch size
WO2002095800A2 (en) * 2001-05-22 2002-11-28 Reflectivity, Inc. A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
US7189332B2 (en) * 2001-09-17 2007-03-13 Texas Instruments Incorporated Apparatus and method for detecting an endpoint in a vapor phase etch
US20030073302A1 (en) * 2001-10-12 2003-04-17 Reflectivity, Inc., A California Corporation Methods for formation of air gap interconnects
US6965468B2 (en) * 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US7027200B2 (en) * 2002-03-22 2006-04-11 Reflectivity, Inc Etching method used in fabrications of microstructures
CA2498320A1 (en) 2002-09-20 2004-04-01 Integrated Dna Technologies, Inc. Anthraquinone quencher dyes, their methods of preparation and use
US6913942B2 (en) 2003-03-28 2005-07-05 Reflectvity, Inc Sacrificial layers for use in fabrications of microelectromechanical devices
JP4204374B2 (ja) * 2003-04-21 2009-01-07 信越石英株式会社 石英ガラス治具の製造方法
CA2430504C (en) * 2003-05-30 2006-06-06 Red Lan Stroller with a rotatable seat disposed rotatably on a stroller frame through bearings and connected fixedly to a fork member
US6980347B2 (en) * 2003-07-03 2005-12-27 Reflectivity, Inc Micromirror having reduced space between hinge and mirror plate of the micromirror
US7645704B2 (en) * 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures
DE102004036803A1 (de) * 2004-07-29 2006-03-23 Robert Bosch Gmbh Verfahren zum Ätzen einer Schicht auf einem Substrat
CN101880880B (zh) * 2009-05-06 2011-07-27 中国科学院微电子研究所 二氧化碳缓冲硅片打孔装置
US12150596B1 (en) * 2023-11-09 2024-11-26 Wendy Jestings Appliance kitchen caddy with 360-degree wheels

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB932543A (en) * 1959-02-17 1963-07-31 Gevaert Photo Prod Nv Improvements relating to photographic colour printing, and apparatus therefor
DE1202616B (de) * 1962-02-23 1965-10-07 Siemens Ag Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2787804A (en) * 1955-03-23 1957-04-09 Faultless Caster Corp Caster bearing seal and damper
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
US3399421A (en) * 1965-03-22 1968-09-03 Thomas A. Crawford Sanitary seal for casters

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB932543A (en) * 1959-02-17 1963-07-31 Gevaert Photo Prod Nv Improvements relating to photographic colour printing, and apparatus therefor
DE1202616B (de) * 1962-02-23 1965-10-07 Siemens Ag Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3345353A1 (de) * 1983-12-15 1985-08-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und metallisierung einer keramikoberflaeche

Also Published As

Publication number Publication date
GB1180187A (en) 1970-02-04
BE714771A (enExample) 1968-11-07
FR1563406A (enExample) 1969-04-11
NL6806497A (enExample) 1968-11-11
US3479680A (en) 1969-11-25
US3511727A (en) 1970-05-12

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