FR1563406A - - Google Patents
Info
- Publication number
- FR1563406A FR1563406A FR1563406DA FR1563406A FR 1563406 A FR1563406 A FR 1563406A FR 1563406D A FR1563406D A FR 1563406DA FR 1563406 A FR1563406 A FR 1563406A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/054—Flat sheets-substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/974—Substrate surface preparation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Sealing Of Bearings (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US63693867A | 1967-05-08 | 1967-05-08 | |
US63692867A | 1967-05-08 | 1967-05-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1563406A true FR1563406A (fr) | 1969-04-11 |
Family
ID=27092726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1563406D Expired FR1563406A (fr) | 1967-05-08 | 1968-05-06 |
Country Status (6)
Country | Link |
---|---|
US (2) | US3511727A (fr) |
BE (1) | BE714771A (fr) |
DE (1) | DE1771301B1 (fr) |
FR (1) | FR1563406A (fr) |
GB (1) | GB1180187A (fr) |
NL (1) | NL6806497A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2551583A1 (fr) * | 1983-07-27 | 1985-03-08 | American Telephone & Telegraph | Procede d'attaque selective de materiaux dans les dispositifs semi-conducteurs |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7003431A (fr) * | 1970-03-11 | 1971-09-14 | ||
US3816166A (en) * | 1970-03-11 | 1974-06-11 | Philips Corp | Vapor depositing method |
FR2130353A1 (en) * | 1971-03-19 | 1972-11-03 | Itt | Gas-etching for silicon nitride deposits - by glow discharge technique |
FR2138539B1 (fr) * | 1971-05-27 | 1973-05-25 | Alsthom | |
US3900363A (en) * | 1972-11-15 | 1975-08-19 | Nippon Columbia | Method of making crystal |
LU67513A1 (fr) * | 1972-11-20 | 1973-07-13 | ||
US3854443A (en) * | 1973-12-19 | 1974-12-17 | Intel Corp | Gas reactor for depositing thin films |
US3964124A (en) * | 1974-12-30 | 1976-06-22 | Midwest-Precision Corporation | Sealed caster |
US4243865A (en) * | 1976-05-14 | 1981-01-06 | Data General Corporation | Process for treating material in plasma environment |
US4348784A (en) * | 1980-06-23 | 1982-09-14 | Stewart-Warner Corporation | Swivel type caster with seal and lubrication ring |
US4421576A (en) * | 1981-09-14 | 1983-12-20 | Rca Corporation | Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate |
US4494271A (en) * | 1981-11-30 | 1985-01-22 | Perlin Materials Handling Development Co. | Caster having a three piece encapsulating bearing assembly |
DE3345353A1 (de) * | 1983-12-15 | 1985-08-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren und metallisierung einer keramikoberflaeche |
US4738272A (en) * | 1984-05-21 | 1988-04-19 | Mcconnell Christopher F | Vessel and system for treating wafers with fluids |
FR2574816B1 (fr) * | 1984-12-14 | 1987-02-20 | Cogema | Procede de fabrication de pieces en forme par elimination chimique selective d'un noyau |
JP2720966B2 (ja) | 1987-07-13 | 1998-03-04 | セントラル硝子株式会社 | 薄膜を付着した部品の再生利用方法 |
US5159267A (en) * | 1990-09-28 | 1992-10-27 | Sematech, Inc. | Pneumatic energy fluxmeter |
US5159264A (en) * | 1991-10-02 | 1992-10-27 | Sematech, Inc. | Pneumatic energy fluxmeter |
US5461753A (en) * | 1993-10-22 | 1995-10-31 | Albion Industries, Inc. | Seal for swivel caster assembly |
US6124211A (en) * | 1994-06-14 | 2000-09-26 | Fsi International, Inc. | Cleaning method |
JPH0864559A (ja) * | 1994-06-14 | 1996-03-08 | Fsi Internatl Inc | 基板面から不要な物質を除去する方法 |
US6015503A (en) * | 1994-06-14 | 2000-01-18 | Fsi International, Inc. | Method and apparatus for surface conditioning |
US5534107A (en) * | 1994-06-14 | 1996-07-09 | Fsi International | UV-enhanced dry stripping of silicon nitride films |
US5479677A (en) * | 1994-09-07 | 1996-01-02 | Chong; Ping-Feng | Caster device |
US5635102A (en) | 1994-09-28 | 1997-06-03 | Fsi International | Highly selective silicon oxide etching method |
US6849471B2 (en) * | 2003-03-28 | 2005-02-01 | Reflectivity, Inc. | Barrier layers for microelectromechanical systems |
WO1997015069A1 (fr) * | 1995-10-19 | 1997-04-24 | Massachusetts Institute Of Technology | Procede d'elimination de metaux |
US5817174A (en) * | 1995-12-15 | 1998-10-06 | Kabushiki Kaisha Toshiba | Semiconductor substrate and method of treating semiconductor substrate |
US7025831B1 (en) | 1995-12-21 | 2006-04-11 | Fsi International, Inc. | Apparatus for surface conditioning |
US6077451A (en) * | 1996-03-28 | 2000-06-20 | Kabushiki Kaisha Toshiba | Method and apparatus for etching of silicon materials |
JP3055471B2 (ja) * | 1996-10-03 | 2000-06-26 | 日本電気株式会社 | 半導体基板の製造方法及びその製造装置 |
US5954884A (en) | 1997-03-17 | 1999-09-21 | Fsi International Inc. | UV/halogen metals removal process |
US6165273A (en) | 1997-10-21 | 2000-12-26 | Fsi International Inc. | Equipment for UV wafer heating and photochemistry |
US6465374B1 (en) | 1997-10-21 | 2002-10-15 | Fsi International, Inc. | Method of surface preparation |
KR100271763B1 (ko) * | 1997-12-05 | 2001-02-01 | 윤종용 | 폴리실리콘식각방법및그식각장치 |
US7041224B2 (en) * | 1999-10-26 | 2006-05-09 | Reflectivity, Inc. | Method for vapor phase etching of silicon |
US6949202B1 (en) | 1999-10-26 | 2005-09-27 | Reflectivity, Inc | Apparatus and method for flow of process gas in an ultra-clean environment |
US6960305B2 (en) * | 1999-10-26 | 2005-11-01 | Reflectivity, Inc | Methods for forming and releasing microelectromechanical structures |
US6942811B2 (en) * | 1999-10-26 | 2005-09-13 | Reflectivity, Inc | Method for achieving improved selectivity in an etching process |
US7019376B2 (en) * | 2000-08-11 | 2006-03-28 | Reflectivity, Inc | Micromirror array device with a small pitch size |
AU2002303842A1 (en) * | 2001-05-22 | 2002-12-03 | Reflectivity, Inc. | A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants |
US7189332B2 (en) | 2001-09-17 | 2007-03-13 | Texas Instruments Incorporated | Apparatus and method for detecting an endpoint in a vapor phase etch |
US20030073302A1 (en) * | 2001-10-12 | 2003-04-17 | Reflectivity, Inc., A California Corporation | Methods for formation of air gap interconnects |
US6965468B2 (en) * | 2003-07-03 | 2005-11-15 | Reflectivity, Inc | Micromirror array having reduced gap between adjacent micromirrors of the micromirror array |
US7027200B2 (en) * | 2002-03-22 | 2006-04-11 | Reflectivity, Inc | Etching method used in fabrications of microstructures |
US7803536B2 (en) | 2002-09-20 | 2010-09-28 | Integrated Dna Technologies, Inc. | Methods of detecting fluorescence with anthraquinone quencher dyes |
US6913942B2 (en) | 2003-03-28 | 2005-07-05 | Reflectvity, Inc | Sacrificial layers for use in fabrications of microelectromechanical devices |
JP4204374B2 (ja) * | 2003-04-21 | 2009-01-07 | 信越石英株式会社 | 石英ガラス治具の製造方法 |
US20040239062A1 (en) * | 2003-05-30 | 2004-12-02 | Red Lan | Stroller with a rotatable seat disposed rotatably on a stroller frame through bearings and connected fixedly to a fork member |
US6980347B2 (en) * | 2003-07-03 | 2005-12-27 | Reflectivity, Inc | Micromirror having reduced space between hinge and mirror plate of the micromirror |
US7645704B2 (en) * | 2003-09-17 | 2010-01-12 | Texas Instruments Incorporated | Methods and apparatus of etch process control in fabrications of microstructures |
DE102004036803A1 (de) * | 2004-07-29 | 2006-03-23 | Robert Bosch Gmbh | Verfahren zum Ätzen einer Schicht auf einem Substrat |
CN101880880B (zh) * | 2009-05-06 | 2011-07-27 | 中国科学院微电子研究所 | 二氧化碳缓冲硅片打孔装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2787804A (en) * | 1955-03-23 | 1957-04-09 | Faultless Caster Corp | Caster bearing seal and damper |
BE575793A (fr) * | 1959-02-17 | |||
DE1202616B (de) * | 1962-02-23 | 1965-10-07 | Siemens Ag | Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht |
US3243323A (en) * | 1962-06-11 | 1966-03-29 | Motorola Inc | Gas etching |
US3399421A (en) * | 1965-03-22 | 1968-09-03 | Thomas A. Crawford | Sanitary seal for casters |
-
1967
- 1967-05-08 US US636928A patent/US3511727A/en not_active Expired - Lifetime
- 1967-05-08 US US636938A patent/US3479680A/en not_active Expired - Lifetime
-
1968
- 1968-04-09 GB GB07008/68A patent/GB1180187A/en not_active Expired
- 1968-05-03 DE DE19681771301 patent/DE1771301B1/de active Pending
- 1968-05-06 FR FR1563406D patent/FR1563406A/fr not_active Expired
- 1968-05-07 BE BE714771D patent/BE714771A/xx unknown
- 1968-05-08 NL NL6806497A patent/NL6806497A/xx unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2551583A1 (fr) * | 1983-07-27 | 1985-03-08 | American Telephone & Telegraph | Procede d'attaque selective de materiaux dans les dispositifs semi-conducteurs |
Also Published As
Publication number | Publication date |
---|---|
US3479680A (en) | 1969-11-25 |
US3511727A (en) | 1970-05-12 |
BE714771A (fr) | 1968-11-07 |
GB1180187A (en) | 1970-02-04 |
DE1771301B1 (de) | 1971-10-07 |
NL6806497A (fr) | 1968-11-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |