DE1765417A1 - Maskenloses Aufdampfverfahren - Google Patents

Maskenloses Aufdampfverfahren

Info

Publication number
DE1765417A1
DE1765417A1 DE19681765417 DE1765417A DE1765417A1 DE 1765417 A1 DE1765417 A1 DE 1765417A1 DE 19681765417 DE19681765417 DE 19681765417 DE 1765417 A DE1765417 A DE 1765417A DE 1765417 A1 DE1765417 A1 DE 1765417A1
Authority
DE
Germany
Prior art keywords
vapor deposition
substrate
maskless
electron beam
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19681765417
Other languages
German (de)
English (en)
Inventor
Baldwin Edwin Charles
Goll Frederick Martin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE1765417A1 publication Critical patent/DE1765417A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Manufacturing Of Electric Cables (AREA)
DE19681765417 1967-05-29 1968-05-16 Maskenloses Aufdampfverfahren Pending DE1765417A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64201367A 1967-05-29 1967-05-29

Publications (1)

Publication Number Publication Date
DE1765417A1 true DE1765417A1 (de) 1972-01-05

Family

ID=24574805

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681765417 Pending DE1765417A1 (de) 1967-05-29 1968-05-16 Maskenloses Aufdampfverfahren

Country Status (5)

Country Link
US (1) US3516855A (enExample)
CH (1) CH491207A (enExample)
DE (1) DE1765417A1 (enExample)
FR (1) FR1558881A (enExample)
GB (1) GB1209266A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989005361A1 (en) * 1987-12-04 1989-06-15 National Research Development Corporation Deposition of materials in a desired pattern on to substrates

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1800193A1 (de) * 1968-10-01 1970-05-14 Telefunken Patent Verfahren zum Herstellen von Kontakten
US4042006A (en) * 1973-01-05 1977-08-16 Siemens Aktiengesellschaft Pyrolytic process for producing a band-shaped metal layer on a substrate
FR2218652B1 (enExample) * 1973-02-20 1976-09-10 Thomson Csf
US3908183A (en) * 1973-03-14 1975-09-23 California Linear Circuits Inc Combined ion implantation and kinetic transport deposition process
CA1047654A (en) * 1974-10-17 1979-01-30 Norman Rain Electrodeposition on semiconductor material
US4144066A (en) * 1977-11-30 1979-03-13 Ppg Industries, Inc. Electron bombardment method for making stained glass photomasks
DE2843990A1 (de) * 1978-10-09 1980-04-24 Siemens Ag Verfahren zur erzeugung von strukturen auf halbleiteroberflaechen und/oder ionenimplantation in halbleiterkoerpern
US4656314A (en) * 1982-02-08 1987-04-07 Industrial Science Associates Printed circuit
US4401686A (en) * 1982-02-08 1983-08-30 Raymond Iannetta Printed circuit and method of forming same
FR2537777A1 (fr) * 1982-12-10 1984-06-15 Commissariat Energie Atomique Procede et dispositif d'implantation de particules dans un solide
US4520268A (en) * 1983-05-26 1985-05-28 Pauline Y. Lau Method and apparatus for introducing normally solid materials into substrate surfaces
US4731539A (en) * 1983-05-26 1988-03-15 Plaur Corporation Method and apparatus for introducing normally solid material into substrate surfaces
JPS60182726A (ja) * 1984-02-29 1985-09-18 Seiko Instr & Electronics Ltd パタ−ン膜形成方法
US4930439A (en) * 1984-06-26 1990-06-05 Seiko Instruments Inc. Mask-repairing device
US4876984A (en) * 1987-06-12 1989-10-31 Ricoh Company, Ltd. Apparatus for forming a thin film
GB2251631B (en) * 1990-12-19 1994-10-12 Mitsubishi Electric Corp Thin-film forming apparatus
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6048411A (en) 1997-05-12 2000-04-11 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
AU6905000A (en) 1999-08-10 2001-03-05 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3117022A (en) * 1960-09-06 1964-01-07 Space Technhology Lab Inc Deposition arrangement
DE1298851B (de) * 1963-12-02 1969-07-03 Steigerwald Verfahren zur Materialbearbeitung mittels Strahlungsenergie
US3419487A (en) * 1966-01-24 1968-12-31 Dow Corning Method of growing thin film semiconductors using an electron beam

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989005361A1 (en) * 1987-12-04 1989-06-15 National Research Development Corporation Deposition of materials in a desired pattern on to substrates

Also Published As

Publication number Publication date
FR1558881A (enExample) 1969-02-28
GB1209266A (en) 1970-10-21
US3516855A (en) 1970-06-23
CH491207A (de) 1970-05-31

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