DE1764829B1 - Planartransistor mit einem scheibenfoermigen halbleiter koerper - Google Patents

Planartransistor mit einem scheibenfoermigen halbleiter koerper

Info

Publication number
DE1764829B1
DE1764829B1 DE19681764829 DE1764829A DE1764829B1 DE 1764829 B1 DE1764829 B1 DE 1764829B1 DE 19681764829 DE19681764829 DE 19681764829 DE 1764829 A DE1764829 A DE 1764829A DE 1764829 B1 DE1764829 B1 DE 1764829B1
Authority
DE
Germany
Prior art keywords
zone
collector
base
carrier layer
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19681764829
Other languages
German (de)
English (en)
Inventor
Dingwall Andrew Gordon Francis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE1764829B1 publication Critical patent/DE1764829B1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Bipolar Transistors (AREA)
DE19681764829 1967-11-17 1968-08-14 Planartransistor mit einem scheibenfoermigen halbleiter koerper Withdrawn DE1764829B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68402067A 1967-11-17 1967-11-17

Publications (1)

Publication Number Publication Date
DE1764829B1 true DE1764829B1 (de) 1972-01-13

Family

ID=24746394

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681764829 Withdrawn DE1764829B1 (de) 1967-11-17 1968-08-14 Planartransistor mit einem scheibenfoermigen halbleiter koerper

Country Status (8)

Country Link
US (1) US3510736A (cg-RX-API-DMAC10.html)
JP (1) JPS4827505B1 (cg-RX-API-DMAC10.html)
BE (1) BE719511A (cg-RX-API-DMAC10.html)
DE (1) DE1764829B1 (cg-RX-API-DMAC10.html)
ES (1) ES356515A1 (cg-RX-API-DMAC10.html)
FR (1) FR1575404A (cg-RX-API-DMAC10.html)
GB (1) GB1162487A (cg-RX-API-DMAC10.html)
NL (1) NL6810406A (cg-RX-API-DMAC10.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916431A (en) * 1974-06-21 1975-10-28 Rca Corp Bipolar integrated circuit transistor with lightly doped subcollector core
US3976512A (en) * 1975-09-22 1976-08-24 Signetics Corporation Method for reducing the defect density of an integrated circuit utilizing ion implantation
US4079408A (en) * 1975-12-31 1978-03-14 International Business Machines Corporation Semiconductor structure with annular collector/subcollector region
US4388634A (en) * 1980-12-04 1983-06-14 Rca Corporation Transistor with improved second breakdown capability
US4571275A (en) * 1983-12-19 1986-02-18 International Business Machines Corporation Method for minimizing autodoping during epitaxial deposition utilizing a graded pattern subcollector
US4644383A (en) * 1985-04-08 1987-02-17 Harris Corporation Subcollector for oxide and junction isolated IC's
US5311054A (en) * 1991-03-25 1994-05-10 Harris Corporation Graded collector for inductive loads

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3260902A (en) * 1962-10-05 1966-07-12 Fairchild Camera Instr Co Monocrystal transistors with region for isolating unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3260902A (en) * 1962-10-05 1966-07-12 Fairchild Camera Instr Co Monocrystal transistors with region for isolating unit

Also Published As

Publication number Publication date
GB1162487A (en) 1969-08-27
US3510736A (en) 1970-05-05
JPS4827505B1 (cg-RX-API-DMAC10.html) 1973-08-23
ES356515A1 (es) 1970-04-01
FR1575404A (cg-RX-API-DMAC10.html) 1969-07-18
NL6810406A (cg-RX-API-DMAC10.html) 1969-05-20
BE719511A (cg-RX-API-DMAC10.html) 1969-01-16

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Legal Events

Date Code Title Description
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee