DE1621532B2 - Verfahren zum herstellen formgebender einaetzungen an einer monokristallinen halbleiterscheibe - Google Patents

Verfahren zum herstellen formgebender einaetzungen an einer monokristallinen halbleiterscheibe

Info

Publication number
DE1621532B2
DE1621532B2 DE19671621532 DE1621532A DE1621532B2 DE 1621532 B2 DE1621532 B2 DE 1621532B2 DE 19671621532 DE19671621532 DE 19671621532 DE 1621532 A DE1621532 A DE 1621532A DE 1621532 B2 DE1621532 B2 DE 1621532B2
Authority
DE
Germany
Prior art keywords
etching
etched
mask
solution
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19671621532
Other languages
German (de)
English (en)
Other versions
DE1621532A1 (de
Inventor
Roger Clyde Bethlehem Waggener Herbert Atkin Allentown Pa Kragness (V St A)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE1621532A1 publication Critical patent/DE1621532A1/de
Publication of DE1621532B2 publication Critical patent/DE1621532B2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Weting (AREA)
DE19671621532 1966-12-20 1967-12-19 Verfahren zum herstellen formgebender einaetzungen an einer monokristallinen halbleiterscheibe Withdrawn DE1621532B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60329266A 1966-12-20 1966-12-20

Publications (2)

Publication Number Publication Date
DE1621532A1 DE1621532A1 (de) 1970-10-22
DE1621532B2 true DE1621532B2 (de) 1971-10-07

Family

ID=24414811

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19671621532 Withdrawn DE1621532B2 (de) 1966-12-20 1967-12-19 Verfahren zum herstellen formgebender einaetzungen an einer monokristallinen halbleiterscheibe

Country Status (7)

Country Link
BE (1) BE708163A (enrdf_load_stackoverflow)
DE (1) DE1621532B2 (enrdf_load_stackoverflow)
FR (1) FR1548079A (enrdf_load_stackoverflow)
GB (1) GB1212379A (enrdf_load_stackoverflow)
MY (1) MY7300447A (enrdf_load_stackoverflow)
NL (1) NL144778B (enrdf_load_stackoverflow)
SE (1) SE342526B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0226451A3 (en) * 1985-12-13 1989-08-23 Xerox Corporation Sensor arrays

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3844858A (en) * 1968-12-31 1974-10-29 Texas Instruments Inc Process for controlling the thickness of a thin layer of semiconductor material and semiconductor substrate
GB1288278A (enrdf_load_stackoverflow) * 1968-12-31 1972-09-06
US3579057A (en) * 1969-08-18 1971-05-18 Rca Corp Method of making a semiconductor article and the article produced thereby
CA957782A (en) * 1970-01-26 1974-11-12 Theodore Kamprath Capacitor structure for integrated circuits
DE2106540A1 (de) * 1970-02-13 1971-08-19 Texas Instruments Inc Halbleiterschaltung und Verfahren zu ihrer Herstellung
DE3879771D1 (de) * 1987-05-27 1993-05-06 Siemens Ag Aetzverfahren zum erzeugen von lochoeffnungen oder graeben in n-dotiertem silizium.
GB9204078D0 (en) * 1992-02-26 1992-04-08 Philips Electronics Uk Ltd Infrared detector manufacture
US5508231A (en) * 1994-03-07 1996-04-16 National Semiconductor Corporation Apparatus and method for achieving mechanical and thermal isolation of portions of integrated monolithic circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0226451A3 (en) * 1985-12-13 1989-08-23 Xerox Corporation Sensor arrays

Also Published As

Publication number Publication date
GB1212379A (en) 1970-11-18
MY7300447A (en) 1973-12-31
NL6716390A (enrdf_load_stackoverflow) 1968-06-21
FR1548079A (enrdf_load_stackoverflow) 1968-11-29
NL144778B (nl) 1975-01-15
DE1621532A1 (de) 1970-10-22
BE708163A (enrdf_load_stackoverflow) 1968-05-02
SE342526B (enrdf_load_stackoverflow) 1972-02-07

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Legal Events

Date Code Title Description
E77 Valid patent as to the heymanns-index 1977
8339 Ceased/non-payment of the annual fee