DE1589917A1 - Verfahren zur Herstellung von Planartransistoren - Google Patents
Verfahren zur Herstellung von PlanartransistorenInfo
- Publication number
- DE1589917A1 DE1589917A1 DE19671589917 DE1589917A DE1589917A1 DE 1589917 A1 DE1589917 A1 DE 1589917A1 DE 19671589917 DE19671589917 DE 19671589917 DE 1589917 A DE1589917 A DE 1589917A DE 1589917 A1 DE1589917 A1 DE 1589917A1
- Authority
- DE
- Germany
- Prior art keywords
- diffusion
- zones
- zone
- diffusion process
- distance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 62
- 239000004065 semiconductor Substances 0.000 claims description 28
- 235000012431 wafers Nutrition 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 230000000873 masking effect Effects 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 3
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US520621A US3389023A (en) | 1966-01-14 | 1966-01-14 | Methods of making a narrow emitter transistor by masking and diffusion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1589917A1 true DE1589917A1 (de) | 1970-06-04 |
Family
ID=24073385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19671589917 Pending DE1589917A1 (de) | 1966-01-14 | 1967-01-05 | Verfahren zur Herstellung von Planartransistoren |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3389023A (en, 2012) |
| BE (1) | BE692593A (en, 2012) |
| CH (1) | CH455054A (en, 2012) |
| DE (1) | DE1589917A1 (en, 2012) |
| FR (1) | FR1508601A (en, 2012) |
| GB (1) | GB1142068A (en, 2012) |
| NL (1) | NL6700625A (en, 2012) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1099049A (en) * | 1965-12-28 | 1968-01-10 | Telefunken Patent | A method of manufacturing transistors |
| GB1153497A (en) * | 1966-07-25 | 1969-05-29 | Associated Semiconductor Mft | Improvements in and relating to Semiconductor Devices |
| US3489622A (en) * | 1967-05-18 | 1970-01-13 | Ibm | Method of making high frequency transistors |
| JPS5148286A (en) * | 1974-10-23 | 1976-04-24 | Mitsubishi Electric Corp | Shusekikairogatasenkeizofukuki |
| JPS6410951B2 (en, 2012) * | 1979-12-28 | 1989-02-22 | Intaanashonaru Bijinesu Mashiinzu Corp |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3281915A (en) * | 1963-04-02 | 1966-11-01 | Rca Corp | Method of fabricating a semiconductor device |
| US3319311A (en) * | 1963-05-24 | 1967-05-16 | Ibm | Semiconductor devices and their fabrication |
-
1966
- 1966-01-14 US US520621A patent/US3389023A/en not_active Expired - Lifetime
- 1966-12-05 GB GB54311/66A patent/GB1142068A/en not_active Expired
-
1967
- 1967-01-05 DE DE19671589917 patent/DE1589917A1/de active Pending
- 1967-01-11 FR FR8285A patent/FR1508601A/fr not_active Expired
- 1967-01-13 BE BE692593D patent/BE692593A/xx unknown
- 1967-01-13 NL NL6700625A patent/NL6700625A/xx unknown
- 1967-01-13 CH CH52467A patent/CH455054A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3389023A (en) | 1968-06-18 |
| FR1508601A (fr) | 1968-01-05 |
| GB1142068A (en) | 1969-02-05 |
| CH455054A (de) | 1968-04-30 |
| NL6700625A (en, 2012) | 1967-07-17 |
| BE692593A (en, 2012) | 1967-06-16 |
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