DE1564317A1 - Halbleiter-Bauelement - Google Patents

Halbleiter-Bauelement

Info

Publication number
DE1564317A1
DE1564317A1 DE19661564317 DE1564317A DE1564317A1 DE 1564317 A1 DE1564317 A1 DE 1564317A1 DE 19661564317 DE19661564317 DE 19661564317 DE 1564317 A DE1564317 A DE 1564317A DE 1564317 A1 DE1564317 A1 DE 1564317A1
Authority
DE
Germany
Prior art keywords
negative resistance
semiconductor
doped
semiconductor component
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19661564317
Other languages
German (de)
English (en)
Inventor
Masaru Tanaka
Akio Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE1564317A1 publication Critical patent/DE1564317A1/de
Pending legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19661564317 1965-04-07 1966-04-06 Halbleiter-Bauelement Pending DE1564317A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2094565 1965-04-07

Publications (1)

Publication Number Publication Date
DE1564317A1 true DE1564317A1 (de) 1969-08-21

Family

ID=12041325

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19661564317 Pending DE1564317A1 (de) 1965-04-07 1966-04-06 Halbleiter-Bauelement

Country Status (4)

Country Link
US (1) US3448350A (enExample)
DE (1) DE1564317A1 (enExample)
GB (1) GB1145075A (enExample)
NL (1) NL6604621A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501513B1 (enExample) * 1968-12-11 1975-01-18
US3654531A (en) * 1969-10-24 1972-04-04 Bell Telephone Labor Inc Electronic switch utilizing a semiconductor with deep impurity levels
US3806774A (en) * 1972-07-10 1974-04-23 Bell Telephone Labor Inc Bistable light emitting devices
US4063210A (en) * 1976-02-17 1977-12-13 General Motors Corporation Temperature independent semiconductor resistor and method of making same
US4578126A (en) * 1983-06-22 1986-03-25 Trw Inc. Liquid phase epitaxial growth process
US5019530A (en) * 1990-04-20 1991-05-28 International Business Machines Corporation Method of making metal-insulator-metal junction structures with adjustable barrier heights

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1295089B (de) * 1960-12-23 1969-05-14 Philips Patentverwaltung Verfahren zum Herstellen einer Halbleiteranordnung, insbesondere eines Transistors
US3287611A (en) * 1961-08-17 1966-11-22 Gen Motors Corp Controlled conducting region geometry in semiconductor devices
US3132408A (en) * 1962-01-18 1964-05-12 Gen Electric Method of making semiconductor strain sensitive devices

Also Published As

Publication number Publication date
GB1145075A (en) 1969-03-12
US3448350A (en) 1969-06-03
NL6604621A (enExample) 1966-10-10

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Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971