GB1145075A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1145075A
GB1145075A GB13926/66A GB1392666A GB1145075A GB 1145075 A GB1145075 A GB 1145075A GB 13926/66 A GB13926/66 A GB 13926/66A GB 1392666 A GB1392666 A GB 1392666A GB 1145075 A GB1145075 A GB 1145075A
Authority
GB
United Kingdom
Prior art keywords
doped
alloying
deep
semi
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13926/66A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1145075A publication Critical patent/GB1145075A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
GB13926/66A 1965-04-07 1966-03-29 Semiconductor device Expired GB1145075A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2094565 1965-04-07

Publications (1)

Publication Number Publication Date
GB1145075A true GB1145075A (en) 1969-03-12

Family

ID=12041325

Family Applications (1)

Application Number Title Priority Date Filing Date
GB13926/66A Expired GB1145075A (en) 1965-04-07 1966-03-29 Semiconductor device

Country Status (4)

Country Link
US (1) US3448350A (enExample)
DE (1) DE1564317A1 (enExample)
GB (1) GB1145075A (enExample)
NL (1) NL6604621A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501513B1 (enExample) * 1968-12-11 1975-01-18
US3654531A (en) * 1969-10-24 1972-04-04 Bell Telephone Labor Inc Electronic switch utilizing a semiconductor with deep impurity levels
US3806774A (en) * 1972-07-10 1974-04-23 Bell Telephone Labor Inc Bistable light emitting devices
US4063210A (en) * 1976-02-17 1977-12-13 General Motors Corporation Temperature independent semiconductor resistor and method of making same
US4578126A (en) * 1983-06-22 1986-03-25 Trw Inc. Liquid phase epitaxial growth process
US5019530A (en) * 1990-04-20 1991-05-28 International Business Machines Corporation Method of making metal-insulator-metal junction structures with adjustable barrier heights

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1295089B (de) * 1960-12-23 1969-05-14 Philips Patentverwaltung Verfahren zum Herstellen einer Halbleiteranordnung, insbesondere eines Transistors
US3287611A (en) * 1961-08-17 1966-11-22 Gen Motors Corp Controlled conducting region geometry in semiconductor devices
US3132408A (en) * 1962-01-18 1964-05-12 Gen Electric Method of making semiconductor strain sensitive devices

Also Published As

Publication number Publication date
DE1564317A1 (de) 1969-08-21
US3448350A (en) 1969-06-03
NL6604621A (enExample) 1966-10-10

Similar Documents

Publication Publication Date Title
US2983854A (en) Semiconductive device
JPS55133574A (en) Insulated gate field effect transistor
GB1065150A (en) Semiconductor switch
GB1393792A (en) Field effect transistor
IE32729L (en) Drift field thyristor
GB1145075A (en) Semiconductor device
IE32763L (en) High speed switching rectifier
GB971261A (en) Improvements in semiconductor devices
GB1200379A (en) Magnetoresistance element
US3241012A (en) Semiconductor signal-translating device
GB1174236A (en) Negative Resistance Semiconductor Device
GB1303235A (enExample)
US3444444A (en) Pressure-responsive semiconductor device
GB1168255A (en) Semiconductor Device
GB1250020A (en) Semiconductor device
GB988264A (en) Semi-conductor device with self-protection against overvoltage
GB1146609A (en) Semiconductor device
GB1141980A (en) Negative resistance device
GB910486A (en) A semi-conductor device
GB969530A (en) A tunnel diode
GB912114A (en) Semiconductor devices
GB980338A (en) An improved quantum mechanical tunneling semiconductor device
GB925398A (en) Improvements in or relating to semi-conductor switching devices
GB1113445A (en) A semiconductor device
GB1024622A (en) Two-terminal solid state devices having a current-controlled negative-resistance characteristic