GB1146609A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB1146609A GB1146609A GB1727866A GB1727866A GB1146609A GB 1146609 A GB1146609 A GB 1146609A GB 1727866 A GB1727866 A GB 1727866A GB 1727866 A GB1727866 A GB 1727866A GB 1146609 A GB1146609 A GB 1146609A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- impurity
- conductor
- alloyed
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
1,146,609. Semi-conductor devices. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 20 April, 1966 [27 April, 1965], No. 17278/66. Heading H1K. A semi-conductor device having a negative resistance characteristic comprises a pair of regions of the same conductivity type disposed on opposite sides of the semi-conductor body and between which the electric bias is applied and an intermediate region doped throughout with a deep energy level impurity. In one embodiment a silicon body is doped with a deep level impurity such as nickel, cobalt, gold, iron, copper, maganese or zinc by plating or evaporating the impurity on to the surface of the body and then diffusing it in at 1000‹ C. in a hydrogen atmosphere, and gold containing 0À8% antimony is alloyed to opposite sides of the body to form an nin structure. Alternatively, a group III impurity such as aluminium may be alloyed to the body to form a pip device. In another embodiment, a gallium arsenide body is doped with copper to provide the deep level impurity and tin or manganese is alloyed to opposite faces of the body to form an nin or pip structure respectively. Germanium may also be used as the semi-conductor material.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2550765A JPS494592B1 (en) | 1965-04-27 | 1965-04-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1146609A true GB1146609A (en) | 1969-03-26 |
Family
ID=12167965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1727866A Expired GB1146609A (en) | 1965-04-27 | 1966-04-20 | Semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS494592B1 (en) |
| DE (1) | DE1564320B2 (en) |
| GB (1) | GB1146609A (en) |
| NL (1) | NL6605640A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3041818A1 (en) * | 1980-11-06 | 1982-06-09 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Semiconductor device for use above intrinsic conductivity temp. - esp. as temp. sensor has majority charge carriers fixed in high ohmic zone |
-
1965
- 1965-04-27 JP JP2550765A patent/JPS494592B1/ja active Pending
-
1966
- 1966-04-20 GB GB1727866A patent/GB1146609A/en not_active Expired
- 1966-04-27 DE DE1966M0069302 patent/DE1564320B2/en active Granted
- 1966-04-27 NL NL6605640A patent/NL6605640A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS494592B1 (en) | 1974-02-01 |
| NL6605640A (en) | 1966-10-28 |
| DE1564320A1 (en) | 1969-10-09 |
| DE1564320B2 (en) | 1973-11-08 |
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