DE1544338A1 - Zuechtung von Lithiumniobat-Kristallen - Google Patents

Zuechtung von Lithiumniobat-Kristallen

Info

Publication number
DE1544338A1
DE1544338A1 DE19661544338 DE1544338A DE1544338A1 DE 1544338 A1 DE1544338 A1 DE 1544338A1 DE 19661544338 DE19661544338 DE 19661544338 DE 1544338 A DE1544338 A DE 1544338A DE 1544338 A1 DE1544338 A1 DE 1544338A1
Authority
DE
Germany
Prior art keywords
melt
seed crystal
crystal
growth
niobium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19661544338
Other languages
German (de)
English (en)
Inventor
Loiacono Gabriel Michael
Kurt Nassau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE1544338A1 publication Critical patent/DE1544338A1/de
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G33/00Compounds of niobium
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/30Niobates; Vanadates; Tantalates
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/60Optical properties, e.g. expressed in CIELAB-values
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901Levitation, reduced gravity, microgravity, space
    • Y10S117/902Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE19661544338 1965-07-12 1966-06-23 Zuechtung von Lithiumniobat-Kristallen Pending DE1544338A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47115765A 1965-07-12 1965-07-12

Publications (1)

Publication Number Publication Date
DE1544338A1 true DE1544338A1 (de) 1970-02-26

Family

ID=23870475

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19661544338 Pending DE1544338A1 (de) 1965-07-12 1966-06-23 Zuechtung von Lithiumniobat-Kristallen

Country Status (6)

Country Link
US (1) US3446603A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE683900A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1544338A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1148080A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL6607871A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE300811B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3653814A (en) * 1970-08-03 1972-04-04 Bell Telephone Labor Inc Technique for the growth of single crystal lead molybdate
US4001076A (en) * 1974-12-11 1977-01-04 Gte Laboratories Incorporated Method for growing thin epitaxial layers of a non-linear, optically active material
US3998687A (en) * 1975-03-10 1976-12-21 Bell Telephone Laboratories, Incorporated Technique for growth of thin film lithium niobate by liquid phase epitaxy
US4284663A (en) * 1976-05-10 1981-08-18 Bell Telephone Laboratories, Incorporated Fabrication of optical waveguides by indiffusion of metals
JPH0628234B2 (ja) * 1984-10-05 1994-04-13 株式会社日立製作所 GaAs単結晶および半導体装置
US5733805A (en) * 1984-10-05 1998-03-31 Hitachi, Ltd. Method of fabricating semiconductor device utilizing a GaAs single crystal
US5171400A (en) * 1989-11-29 1992-12-15 Stanford University Method of producing crystalline rods having regions of reversed dominant ferroelectric polarity and method for clarifying such a rod
RU2188159C1 (ru) * 2001-06-14 2002-08-27 Гринберг Евгений Ефимович Способ получения метаниобата лития
US6809027B2 (en) * 2002-06-06 2004-10-26 International Business Machines Corporation Self-aligned borderless contacts
DE102004003596B4 (de) * 2004-01-15 2007-06-21 Forschungsverbund Berlin E.V. Verfahren zur Herstellung von ZnO-Einkristallen
EP3410529B1 (en) * 2016-01-29 2020-12-23 National Institute of Advanced Industrial Science and Technology Solid electrolyte material and all solid lithium ion secondary battery
CN105624790A (zh) 2016-03-01 2016-06-01 南开大学 铋镁双掺铌酸锂晶体

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3346344A (en) * 1965-07-12 1967-10-10 Bell Telephone Labor Inc Growth of lithium niobate crystals

Also Published As

Publication number Publication date
US3446603A (en) 1969-05-27
NL6607871A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1967-01-13
SE300811B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1968-05-13
BE683900A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1966-12-16
GB1148080A (en) 1969-04-10

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