DE1544183A1 - Zuechtung von duennen Halbleiterschichten - Google Patents
Zuechtung von duennen HalbleiterschichtenInfo
- Publication number
- DE1544183A1 DE1544183A1 DE19661544183 DE1544183A DE1544183A1 DE 1544183 A1 DE1544183 A1 DE 1544183A1 DE 19661544183 DE19661544183 DE 19661544183 DE 1544183 A DE1544183 A DE 1544183A DE 1544183 A1 DE1544183 A1 DE 1544183A1
- Authority
- DE
- Germany
- Prior art keywords
- electrical energy
- supplied
- substrate
- steam
- cause
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/04—Treatment of selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/905—Electron beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/048—Energy beam assisted EPI growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/071—Heating, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/158—Sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/971—Stoichiometric control of host substrate composition
Claims (9)
1. Verfahren zum Abscheiden oder Niederschlagen dünner
Filme aus Halbleitermaterial auf einer Unterlage, dadurch gekennzeichnet, daß die Unterlage in eine Reaktionskammer
eingeführt, die Reaktionskammer mit einem Dampf beschickt wird, der die chemischen Elemente des
Halbleitermaterials enthält, und daß elektrische Energie diesem Dampf mit hinreichender Intensität zugeführt wird,
um eine Abscheidung auf der Unterlage zu bewirken.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die elektrische Energie in Form einer Glimmentladung
in dem Dampf zwischen einer Elektrode und dieser Unterlage zugeführt wird.
3. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß
die elektrische Energie zugeführt wird, indem ein Elektronenstrahl
durch den Dampf auf die Unterlage gerichtet wird.
4. Verfahren nach Anspruch 3» dadurch gekennzeichnet, daß der Elektronenstrahl über bestimmte Bereiche dieser Unterlage
gelenkt wird, um eine Niederschlagsbildung in diesen bestimmten Bereichen zu bewirken.
Vom Dent ;·}>,;>! Patentamt nhne Jt1Ie
fjewihr ' ι, iV . Al.'i riff /Ή1
fjewihr ' ι, iV . Al.'i riff /Ή1
Untwi-if - - ... ■ .·...; J ..-. ;. ■:.,::!, „heu
Wedfi-j!.. ' a. .α .;"vi:;uet sind,
Wedfi-j!.. ' a. .α .;"vi:;uet sind,
009826/1643
- MS -
<J
5. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß ein Dampf verwendet wird, der verdampftes Kadmium, welches
auf der Unterlage niedergeschlagen wird und Schwefelwasserstoff enthält, der durch die elektrische Energie
ionisiert wird, um eine Reaktion des Schwefels mit dem Kadmium auf der Unterlage unter Bildung von Kadmiumsulfid
zu bewirken.
6. Verfahren nach einem der vorangehenden Ansprüche, um eine Unterlage mit dünnen Halbleiterschichten zu beschichten,
wobei das Halbleitermaterial aus intermetallischen Verbindungen besteht, dadurch gekennzeichnet, daß
eine Schicht des metallischen Elements dieser intermetallischen Verbindung auf der Unterlage abgeschieden
wird, daß ein Dampf über das andere Element der gewünschten intermetallischen Verbindung über die Oberfläche dieser
Unterlage geleitet wird und daß elektrische Energie zu dieser Unterlage mit hinreichender Stärke zugeführt wird,
um die Reaktion dieser Elemente und die Abscheidung auf die Unterlage zu bewirken.
7. Verfahren nach Anspruch 6, dadurch gekennzeichnet, daß die elektrische Energie in Form einer Glimmentladung
in dem Dampf zwischen einer Elektrode und dieser Unterlage zugeführt wird.
Ci,:■>;..
■ ■ ; ..
009826/1643
15AA183
- te -
8. Verfahren nach Anspruch 6, dadurch gekennzeichnet, daß die elektrische Energie zugeführt wird, indem ein
Elektronenstrahl durch den Dampf auf die Unterlage gerichtet wird.
9. Verfahren nach Anspruch 8, dadurch gekennzeichnet,
daß der Elektronenstrahl über bestimmte Bereiche dieser
Unterlage gelenkt wird, um die Bildung der intermetallischen Verbindung nur in diesen bestimmten Bereichen zu
bewirken.
V
0098 26/16 43
Leerseite
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US522580A US3419487A (en) | 1966-01-24 | 1966-01-24 | Method of growing thin film semiconductors using an electron beam |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1544183A1 true DE1544183A1 (de) | 1970-06-25 |
Family
ID=24081443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19661544183 Pending DE1544183A1 (de) | 1966-01-24 | 1966-09-15 | Zuechtung von duennen Halbleiterschichten |
Country Status (5)
Country | Link |
---|---|
US (1) | US3419487A (de) |
BE (1) | BE693024A (de) |
DE (1) | DE1544183A1 (de) |
FR (1) | FR1508795A (de) |
NL (1) | NL6701070A (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3516855A (en) * | 1967-05-29 | 1970-06-23 | Ibm | Method of depositing conductive ions by utilizing electron beam |
US3889019A (en) * | 1969-03-13 | 1975-06-10 | United Aircraft Corp | Vapor randomization in vacuum deposition of coatings |
US3663265A (en) * | 1970-11-16 | 1972-05-16 | North American Rockwell | Deposition of polymeric coatings utilizing electrical excitation |
US3916034A (en) * | 1971-05-21 | 1975-10-28 | Hitachi Ltd | Method of transporting substances in a plasma stream to and depositing it on a target |
US3847114A (en) * | 1971-06-09 | 1974-11-12 | Ise Electronics Corp | Apparatus for vapor deposition and ion implantation |
US3791852A (en) * | 1972-06-16 | 1974-02-12 | Univ California | High rate deposition of carbides by activated reactive evaporation |
CH571038A5 (de) * | 1972-07-24 | 1975-12-31 | Bbc Brown Boveri & Cie | |
JPS5123393B2 (de) * | 1972-10-03 | 1976-07-16 | ||
US4042006A (en) * | 1973-01-05 | 1977-08-16 | Siemens Aktiengesellschaft | Pyrolytic process for producing a band-shaped metal layer on a substrate |
US3898359A (en) * | 1974-01-15 | 1975-08-05 | Precision Electronic Component | Thin film magneto-resistors and methods of making same |
US4099969A (en) * | 1974-10-10 | 1978-07-11 | Xerox Corporation | Coating method to improve adhesion of photoconductors |
US4170662A (en) * | 1974-11-05 | 1979-10-09 | Eastman Kodak Company | Plasma plating |
US4058638A (en) * | 1974-12-19 | 1977-11-15 | Texas Instruments Incorporated | Method of optical thin film coating |
US4013463A (en) * | 1975-08-15 | 1977-03-22 | Leder Lewis B | Photoreceptor fabrication utilizing AC ion plating |
US4063974A (en) * | 1975-11-14 | 1977-12-20 | Hughes Aircraft Company | Planar reactive evaporation method for the deposition of compound semiconducting films |
US4072518A (en) * | 1976-12-30 | 1978-02-07 | Xerox Corporation | Method of making trigonal selenium interlayers by glow discharge |
US4226897A (en) * | 1977-12-05 | 1980-10-07 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
GB2069008B (en) * | 1980-01-16 | 1984-09-12 | Secr Defence | Coating in a glow discharge |
US4297387A (en) * | 1980-06-04 | 1981-10-27 | Battelle Development Corporation | Cubic boron nitride preparation |
US4336277A (en) * | 1980-09-29 | 1982-06-22 | The Regents Of The University Of California | Transparent electrical conducting films by activated reactive evaporation |
FR2513123A1 (fr) * | 1981-09-23 | 1983-03-25 | Goemar Sa | Nouveaux medicaments a base d'extraits d'algues, et formulations correspondantes |
EP0095384A3 (de) * | 1982-05-26 | 1984-12-27 | Konica Corporation | Vorrichtung für eine Vakuumbeschichtung |
US4505949A (en) * | 1984-04-25 | 1985-03-19 | Texas Instruments Incorporated | Thin film deposition using plasma-generated source gas |
US4717596A (en) * | 1985-10-30 | 1988-01-05 | International Business Machines Corporation | Method for vacuum vapor deposition with improved mass flow control |
US5078847A (en) * | 1990-08-29 | 1992-01-07 | Jerry Grosman | Ion plating method and apparatus |
CH683776A5 (de) * | 1991-12-05 | 1994-05-13 | Alusuisse Lonza Services Ag | Beschichten einer Substratfläche mit einer Permeationssperre. |
US7194801B2 (en) | 2000-03-24 | 2007-03-27 | Cymbet Corporation | Thin-film battery having ultra-thin electrolyte and associated method |
US7294209B2 (en) | 2003-01-02 | 2007-11-13 | Cymbet Corporation | Apparatus and method for depositing material onto a substrate using a roll-to-roll mask |
US6906436B2 (en) | 2003-01-02 | 2005-06-14 | Cymbet Corporation | Solid state activity-activated battery device and method |
US7603144B2 (en) | 2003-01-02 | 2009-10-13 | Cymbet Corporation | Active wireless tagging system on peel and stick substrate |
US7211351B2 (en) * | 2003-10-16 | 2007-05-01 | Cymbet Corporation | Lithium/air batteries with LiPON as separator and protective barrier and method |
KR20070024473A (ko) | 2004-01-06 | 2007-03-02 | 사임베트 코퍼레이션 | 층상 배리어구조와 그 형성방법 |
US7776478B2 (en) | 2005-07-15 | 2010-08-17 | Cymbet Corporation | Thin-film batteries with polymer and LiPON electrolyte layers and method |
KR101387855B1 (ko) | 2005-07-15 | 2014-04-22 | 사임베트 코퍼레이션 | 연질 및 경질 전해질층을 가진 박막 배터리 및 그 제조방법 |
US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
EP3762989A4 (de) | 2018-03-07 | 2021-12-15 | Space Charge, LLC | Dünnfilm-festkörper-energiespeichervorrichtungen |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB481842A (en) * | 1936-06-17 | 1938-03-18 | Bernhard Berghaus | Improvements in and relating to the coating of articles by vaporisation of the coating materials |
US2292914A (en) * | 1939-06-13 | 1942-08-11 | Telefunken Gmbh | Luminescent material |
US3119707A (en) * | 1960-03-31 | 1964-01-28 | Space Technology Lab Inc | Method for the deposition of thin films by electron deposition |
US3329601A (en) * | 1964-09-15 | 1967-07-04 | Donald M Mattox | Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial |
-
1966
- 1966-01-24 US US522580A patent/US3419487A/en not_active Expired - Lifetime
- 1966-09-15 DE DE19661544183 patent/DE1544183A1/de active Pending
-
1967
- 1967-01-23 FR FR92177A patent/FR1508795A/fr not_active Expired
- 1967-01-23 BE BE693024D patent/BE693024A/xx unknown
- 1967-01-24 NL NL6701070A patent/NL6701070A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
US3419487A (en) | 1968-12-31 |
BE693024A (de) | 1967-07-24 |
NL6701070A (de) | 1967-07-25 |
FR1508795A (fr) | 1968-01-05 |
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