DE1539007A1 - Transistor - Google Patents

Transistor

Info

Publication number
DE1539007A1
DE1539007A1 DE19661539007 DE1539007A DE1539007A1 DE 1539007 A1 DE1539007 A1 DE 1539007A1 DE 19661539007 DE19661539007 DE 19661539007 DE 1539007 A DE1539007 A DE 1539007A DE 1539007 A1 DE1539007 A1 DE 1539007A1
Authority
DE
Germany
Prior art keywords
xylylene
insulating layer
areas
substituted
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19661539007
Other languages
German (de)
English (en)
Inventor
Westbrook Russel David
Shepard Robert Lane
Wagener Johann Siegfried
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Union Carbide Corp
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Publication of DE1539007A1 publication Critical patent/DE1539007A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/035—Diffusion through a layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Thin Film Transistor (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
DE19661539007 1965-02-25 1966-02-25 Transistor Pending DE1539007A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US435124A US3375419A (en) 1965-02-25 1965-02-25 Field effect transistor with poly-p-xylylene insulated gate structure and method

Publications (1)

Publication Number Publication Date
DE1539007A1 true DE1539007A1 (de) 1969-08-14

Family

ID=23727082

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19661539007 Pending DE1539007A1 (de) 1965-02-25 1966-02-25 Transistor

Country Status (6)

Country Link
US (1) US3375419A (enExample)
DE (1) DE1539007A1 (enExample)
FR (1) FR1469938A (enExample)
GB (1) GB1138025A (enExample)
NL (1) NL6602450A (enExample)
SE (1) SE316838B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2716419A1 (de) * 1976-04-14 1977-11-03 Ates Componenti Elettron Verfahren zum passivieren von leistungs-halbleiterbauelementen
DE2700463A1 (de) * 1977-01-07 1978-07-13 Siemens Ag Verfahren zum passivieren von halbleiterelementen

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1260542B1 (en) * 2001-05-16 2007-03-07 Kishimoto Sangyo Co., Ltd. Polymer thin film, its production method, binder for bio chip, bio chip, and its production method
WO2004016672A2 (en) * 2002-08-19 2004-02-26 Rensselaer Polytechnic Institute Surface modification of cvd polymer films

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299194A (enExample) * 1962-10-15

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2716419A1 (de) * 1976-04-14 1977-11-03 Ates Componenti Elettron Verfahren zum passivieren von leistungs-halbleiterbauelementen
DE2700463A1 (de) * 1977-01-07 1978-07-13 Siemens Ag Verfahren zum passivieren von halbleiterelementen

Also Published As

Publication number Publication date
NL6602450A (enExample) 1966-08-26
SE316838B (enExample) 1969-11-03
US3375419A (en) 1968-03-26
FR1469938A (fr) 1967-02-17
GB1138025A (en) 1968-12-27

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