GB1138025A - Transistor device and method for the production thereof - Google Patents

Transistor device and method for the production thereof

Info

Publication number
GB1138025A
GB1138025A GB8077/66A GB807766A GB1138025A GB 1138025 A GB1138025 A GB 1138025A GB 8077/66 A GB8077/66 A GB 8077/66A GB 807766 A GB807766 A GB 807766A GB 1138025 A GB1138025 A GB 1138025A
Authority
GB
United Kingdom
Prior art keywords
xylylene
substrate
poly
deposited
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8077/66A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Union Carbide Corp
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Publication of GB1138025A publication Critical patent/GB1138025A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/035—Diffusion through a layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
GB8077/66A 1965-02-25 1966-12-24 Transistor device and method for the production thereof Expired GB1138025A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US435124A US3375419A (en) 1965-02-25 1965-02-25 Field effect transistor with poly-p-xylylene insulated gate structure and method

Publications (1)

Publication Number Publication Date
GB1138025A true GB1138025A (en) 1968-12-27

Family

ID=23727082

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8077/66A Expired GB1138025A (en) 1965-02-25 1966-12-24 Transistor device and method for the production thereof

Country Status (6)

Country Link
US (1) US3375419A (enExample)
DE (1) DE1539007A1 (enExample)
FR (1) FR1469938A (enExample)
GB (1) GB1138025A (enExample)
NL (1) NL6602450A (enExample)
SE (1) SE316838B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1059086B (it) * 1976-04-14 1982-05-31 Ates Componenti Elettron Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa
DE2700463A1 (de) * 1977-01-07 1978-07-13 Siemens Ag Verfahren zum passivieren von halbleiterelementen
DE60218568T2 (de) * 2001-05-16 2007-11-22 Kishimoto Sangyo Co. Ltd. Dünne Polymer-Schicht, Herstellungsverfahren, Bindemittel für Bio-Chip, Bio-Chip und Verfahren zu seiner Herstellung
AU2003263911A1 (en) * 2002-08-19 2004-03-03 Rensselaer Polytechnic Institute Surface modification of cvd polymer films

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299194A (enExample) * 1962-10-15

Also Published As

Publication number Publication date
SE316838B (enExample) 1969-11-03
NL6602450A (enExample) 1966-08-26
FR1469938A (fr) 1967-02-17
US3375419A (en) 1968-03-26
DE1539007A1 (de) 1969-08-14

Similar Documents

Publication Publication Date Title
Deal et al. Characteristics of Fast Surface States Associated with SiO2‐Si and Si3 N 4‐SiO2‐Si Structures
US4055884A (en) Fabrication of power field effect transistors and the resulting structures
US6767843B2 (en) Method of N2O growth of an oxide layer on a silicon carbide layer
US3761327A (en) Planar silicon gate mos process
US4532695A (en) Method of making self-aligned IGFET
JP6945585B2 (ja) ワイドバンドギャップ半導体デバイスおよびワイドバンドギャップ半導体デバイスを形成する方法
US3859716A (en) Production of thin layer complementary channel mos circuits
US3502950A (en) Gate structure for insulated gate field effect transistor
GB1242896A (en) Semiconductor device and method of fabrication
GB1388772A (en) Semiconductor devices and a method of producing the same
GB1446268A (en) Method of making a semiconductor device
GB1138025A (en) Transistor device and method for the production thereof
EP0386085A1 (en) Mosfet in silicon carbide
GB1253820A (en) Fabrication of field effect transistors
CN107871781A (zh) 一种碳化硅mosfet及其制造方法
US4116721A (en) Gate charge neutralization for insulated gate field-effect transistors
KR970053015A (ko) 반도체 소자의 트랜지스터 제조방법
CN105161531A (zh) 4H-SiC金属半导体场效应晶体管及其制作方法
ES337635A1 (es) Un dispositivo semiconductor.
CN105206679B (zh) 4H-SiC金属半导体场效应晶体管及其制作方法
US20240079237A1 (en) Method of manufacturing ohmic contacts of an electronic device, with thermal budget optimization
JP2874175B2 (ja) 半導体装置の製造方法
KR101006512B1 (ko) 엠이이엘 소자의 제조방법
JPS5730368A (en) Tunnel fet
KR800000442B1 (ko) 안정 반도체 소자