CN105161526A - 提高垂直导电结构 SiC MOSFET沟道迁移率的方法 - Google Patents
提高垂直导电结构 SiC MOSFET沟道迁移率的方法 Download PDFInfo
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- CN105161526A CN105161526A CN201510486185.6A CN201510486185A CN105161526A CN 105161526 A CN105161526 A CN 105161526A CN 201510486185 A CN201510486185 A CN 201510486185A CN 105161526 A CN105161526 A CN 105161526A
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- 238000000034 method Methods 0.000 title claims abstract description 58
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- 238000002513 implantation Methods 0.000 claims description 25
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- 230000015572 biosynthetic process Effects 0.000 claims description 19
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 18
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
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- 229910000077 silane Inorganic materials 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
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- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 6
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- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 5
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
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- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
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- 230000035484 reaction time Effects 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 5
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- 229910003465 moissanite Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
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- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510486185.6A CN105161526B (zh) | 2015-08-07 | 2015-08-07 | 提高垂直导电结构SiC MOSFET沟道迁移率的方法 |
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CN201510486185.6A CN105161526B (zh) | 2015-08-07 | 2015-08-07 | 提高垂直导电结构SiC MOSFET沟道迁移率的方法 |
Publications (2)
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CN105161526A true CN105161526A (zh) | 2015-12-16 |
CN105161526B CN105161526B (zh) | 2017-12-01 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106711208A (zh) * | 2016-12-29 | 2017-05-24 | 西安电子科技大学 | 一种碳化硅纵向绝缘栅双极型晶体管及制备方法 |
CN114551600A (zh) * | 2022-02-22 | 2022-05-27 | 苏州龙驰半导体科技有限公司 | 半导体器件的制作方法和半导体器件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6841436B2 (en) * | 2001-10-15 | 2005-01-11 | Denso Corporation | Method of fabricating SiC semiconductor device |
US20050215066A1 (en) * | 2004-03-15 | 2005-09-29 | Sharp Laboratories Of America, Inc. | High density plasma process for the formation of silicon dioxide on silicon carbide substrates |
CN102779852A (zh) * | 2012-07-18 | 2012-11-14 | 电子科技大学 | 一种具有复合栅介质结构的SiC VDMOS器件 |
-
2015
- 2015-08-07 CN CN201510486185.6A patent/CN105161526B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6841436B2 (en) * | 2001-10-15 | 2005-01-11 | Denso Corporation | Method of fabricating SiC semiconductor device |
US20050215066A1 (en) * | 2004-03-15 | 2005-09-29 | Sharp Laboratories Of America, Inc. | High density plasma process for the formation of silicon dioxide on silicon carbide substrates |
CN102779852A (zh) * | 2012-07-18 | 2012-11-14 | 电子科技大学 | 一种具有复合栅介质结构的SiC VDMOS器件 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106711208A (zh) * | 2016-12-29 | 2017-05-24 | 西安电子科技大学 | 一种碳化硅纵向绝缘栅双极型晶体管及制备方法 |
CN114551600A (zh) * | 2022-02-22 | 2022-05-27 | 苏州龙驰半导体科技有限公司 | 半导体器件的制作方法和半导体器件 |
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Publication number | Publication date |
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CN105161526B (zh) | 2017-12-01 |
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Effective date of registration: 20220602 Address after: No. 518, Linjiang Road, Gaobu Town, Yuecheng District, Shaoxing City, Zhejiang Province Patentee after: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. Address before: 710071 Taibai South Road, Yanta District, Xi'an, Shaanxi Province, No. 2 Patentee before: XIDIAN University |
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Effective date of registration: 20231219 Address after: Room 203-18, Building 1, No. 1433 Renmin East Road, Gaobu Street, Yuecheng District, Shaoxing City, Zhejiang Province, 312035 Patentee after: Xinlian Power Technology (Shaoxing) Co.,Ltd. Address before: No. 518, Linjiang Road, Gaobu Town, Yuecheng District, Shaoxing City, Zhejiang Province Patentee before: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. |