DE1521795B2 - Verfahren zum gaspolieren von halbleitermateiral - Google Patents

Verfahren zum gaspolieren von halbleitermateiral

Info

Publication number
DE1521795B2
DE1521795B2 DE19651521795 DE1521795A DE1521795B2 DE 1521795 B2 DE1521795 B2 DE 1521795B2 DE 19651521795 DE19651521795 DE 19651521795 DE 1521795 A DE1521795 A DE 1521795A DE 1521795 B2 DE1521795 B2 DE 1521795B2
Authority
DE
Germany
Prior art keywords
gas
polishing
polished
plate
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19651521795
Other languages
German (de)
English (en)
Other versions
DE1521795A1 (de
Inventor
Melvin Reisman Arnold Yorktown Heights NY Berkenbht (V St A )
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE1521795A1 publication Critical patent/DE1521795A1/de
Publication of DE1521795B2 publication Critical patent/DE1521795B2/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/054—Flat sheets-substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • ing And Chemical Polishing (AREA)
DE19651521795 1964-08-12 1965-08-11 Verfahren zum gaspolieren von halbleitermateiral Pending DE1521795B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US389017A US3366520A (en) 1964-08-12 1964-08-12 Vapor polishing of a semiconductor wafer

Publications (2)

Publication Number Publication Date
DE1521795A1 DE1521795A1 (de) 1970-02-12
DE1521795B2 true DE1521795B2 (de) 1972-01-27

Family

ID=23536484

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19651521795 Pending DE1521795B2 (de) 1964-08-12 1965-08-11 Verfahren zum gaspolieren von halbleitermateiral

Country Status (5)

Country Link
US (2) US3366520A (ref)
JP (1) JPS4929790B1 (ref)
DE (1) DE1521795B2 (ref)
GB (1) GB1081888A (ref)
NL (1) NL6509555A (ref)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544187A1 (de) * 1964-04-25 1971-03-04 Fujitsu Ltd Verfahren zum Herstellen von Halbleiterkristallen durch Abscheidung aus der Gasphase
US3522118A (en) * 1965-08-17 1970-07-28 Motorola Inc Gas phase etching
US3546036A (en) * 1966-06-13 1970-12-08 North American Rockwell Process for etch-polishing sapphire and other oxides
US3639186A (en) * 1969-02-24 1972-02-01 Ibm Process for the production of finely etched patterns
US4671847A (en) * 1985-11-18 1987-06-09 The United States Of America As Represented By The Secretary Of The Navy Thermally-activated vapor etchant for InP
US4708766A (en) * 1986-11-07 1987-11-24 Texas Instruments Incorporated Hydrogen iodide etch of tin oxide
ATE355397T1 (de) * 2002-05-01 2006-03-15 Danfoss As Verfahren zur modifizierung einer metalloberfläche

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030189A (en) * 1958-05-19 1962-04-17 Siemens Ag Methods of producing substances of highest purity, particularly electric semiconductors
US3218204A (en) * 1962-07-13 1965-11-16 Monsanto Co Use of hydrogen halide as a carrier gas in forming ii-vi compound from a crude ii-vicompound

Also Published As

Publication number Publication date
GB1081888A (en) 1967-09-06
USB389017I5 (ref)
JPS4929790B1 (ref) 1974-08-07
DE1521795A1 (de) 1970-02-12
US3366520A (en) 1968-01-30
NL6509555A (ref) 1966-02-14

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Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971