DE1521255B2 - Verfahren zum ausbilden begrenzter schichten durch vakuumaufdampfen - Google Patents

Verfahren zum ausbilden begrenzter schichten durch vakuumaufdampfen

Info

Publication number
DE1521255B2
DE1521255B2 DE19661521255 DE1521255A DE1521255B2 DE 1521255 B2 DE1521255 B2 DE 1521255B2 DE 19661521255 DE19661521255 DE 19661521255 DE 1521255 A DE1521255 A DE 1521255A DE 1521255 B2 DE1521255 B2 DE 1521255B2
Authority
DE
Germany
Prior art keywords
layer
fluoride
semiconductor
auxiliary layer
lift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19661521255
Other languages
German (de)
English (en)
Other versions
DE1521255A1 (de
Inventor
Ivan William Los Altos Cahf Lehrer (V St A ) C23d 5 02
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of DE1521255A1 publication Critical patent/DE1521255A1/de
Publication of DE1521255B2 publication Critical patent/DE1521255B2/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Surface Treatment Of Glass (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
DE19661521255 1965-11-26 1966-10-18 Verfahren zum ausbilden begrenzter schichten durch vakuumaufdampfen Pending DE1521255B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50982565A 1965-11-26 1965-11-26

Publications (2)

Publication Number Publication Date
DE1521255A1 DE1521255A1 (de) 1970-02-12
DE1521255B2 true DE1521255B2 (de) 1971-03-11

Family

ID=24028228

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19661521255 Pending DE1521255B2 (de) 1965-11-26 1966-10-18 Verfahren zum ausbilden begrenzter schichten durch vakuumaufdampfen

Country Status (10)

Country Link
US (1) USB509825I5 (OSRAM)
BE (1) BE687592A (OSRAM)
CH (1) CH480448A (OSRAM)
DE (1) DE1521255B2 (OSRAM)
DK (1) DK121522B (OSRAM)
ES (1) ES333330A1 (OSRAM)
FR (1) FR1504611A (OSRAM)
GB (1) GB1124894A (OSRAM)
NL (1) NL6612593A (OSRAM)
SE (1) SE319824B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3127996A1 (de) * 1980-07-15 1982-03-04 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleitervorrichtung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH507542A (de) * 1969-02-17 1970-12-31 Liss S A Verfahren zur Herstellung von Zifferblättern
DE3514094A1 (de) * 1985-04-16 1986-10-23 Schering AG, Berlin und Bergkamen, 1000 Berlin Herstellung metallischer strukturen auf anorganischen nichtleitern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3127996A1 (de) * 1980-07-15 1982-03-04 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleitervorrichtung

Also Published As

Publication number Publication date
DK121522B (da) 1971-10-25
CH480448A (de) 1969-10-31
USB509825I5 (OSRAM)
SE319824B (OSRAM) 1970-01-26
FR1504611A (fr) 1967-12-08
BE687592A (OSRAM) 1967-03-01
ES333330A1 (es) 1967-08-16
NL6612593A (OSRAM) 1967-05-29
DE1521255A1 (de) 1970-02-12
GB1124894A (en) 1968-08-21

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