DE1514254B2 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE1514254B2
DE1514254B2 DE19651514254 DE1514254A DE1514254B2 DE 1514254 B2 DE1514254 B2 DE 1514254B2 DE 19651514254 DE19651514254 DE 19651514254 DE 1514254 A DE1514254 A DE 1514254A DE 1514254 B2 DE1514254 B2 DE 1514254B2
Authority
DE
Germany
Prior art keywords
zone
layer
shielding layer
base
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19651514254
Other languages
German (de)
English (en)
Other versions
DE1514254A1 (de
Inventor
Günther Carl Maximilian» Eduard lersel Alfons Matthijs Reimer van Rongen Jacobus Johannes Moors Petrus Martinus Albertus Wilhelmus Nymegen Wolfrum (Niederlande)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL6405411A external-priority patent/NL6405411A/xx
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Priority claimed from NL6510237A external-priority patent/NL6510237A/xx
Publication of DE1514254A1 publication Critical patent/DE1514254A1/de
Publication of DE1514254B2 publication Critical patent/DE1514254B2/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W20/40—
    • H10W72/90—
    • H10W74/43—
    • H10W72/5363—
    • H10W72/5522—
    • H10W72/59—
    • H10W72/923—
    • H10W72/934—
    • H10W72/952—

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Wire Bonding (AREA)
DE19651514254 1964-05-15 1965-05-12 Halbleiterbauelement Pending DE1514254B2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL6405411A NL6405411A (enExample) 1964-05-15 1964-05-15
NL6510237A NL6510237A (enExample) 1965-08-06 1965-08-06

Publications (2)

Publication Number Publication Date
DE1514254A1 DE1514254A1 (de) 1970-03-05
DE1514254B2 true DE1514254B2 (de) 1971-02-25

Family

ID=26643768

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19651514254 Pending DE1514254B2 (de) 1964-05-15 1965-05-12 Halbleiterbauelement

Country Status (9)

Country Link
US (1) US3373323A (enExample)
JP (1) JPS4820951B1 (enExample)
BE (2) BE663896A (enExample)
CH (1) CH432661A (enExample)
DE (1) DE1514254B2 (enExample)
DK (1) DK117084B (enExample)
GB (1) GB1111663A (enExample)
NL (1) NL134388C (enExample)
SE (1) SE320128B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6606714A (enExample) * 1966-05-17 1967-11-20
NL6609002A (enExample) * 1966-06-29 1968-01-02
DE1564705A1 (de) * 1966-09-12 1970-05-14 Siemens Ag Halbleiteranordnung mit mindestens einem in Emitterschaltung betriebenen Transistor
US3518504A (en) * 1966-11-15 1970-06-30 Int Standard Electric Corp Transistor with lead-in electrodes
NL158027B (nl) * 1967-09-12 1978-09-15 Philips Nv Gestabiliseerde planaire halfgeleiderinrichting met een hoog gedoteerde oppervlaktezone.
US3573571A (en) * 1967-10-13 1971-04-06 Gen Electric Surface-diffused transistor with isolated field plate
GB1188879A (en) * 1967-12-13 1970-04-22 Matsushita Electronics Corp Planar Transistor
DE1926989A1 (de) * 1969-05-27 1970-12-03 Beneking Prof Dr Rer Nat Heinz Hochfrequenzleitung
DE1927876C3 (de) * 1969-05-31 1979-09-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
US3763550A (en) * 1970-12-03 1973-10-09 Gen Motors Corp Geometry for a pnp silicon transistor with overlay contacts
US3697828A (en) * 1970-12-03 1972-10-10 Gen Motors Corp Geometry for a pnp silicon transistor with overlay contacts
JPS547196B2 (enExample) * 1971-08-26 1979-04-04
US4017886A (en) * 1972-10-18 1977-04-12 Hitachi, Ltd. Discrete semiconductor device having polymer resin as insulator and method for making the same
US4360823A (en) * 1977-03-16 1982-11-23 U.S. Philips Corporation Semiconductor device having an improved multilayer wiring system
US4302530A (en) * 1977-12-08 1981-11-24 University Of Pennsylvania Method for making substance-sensitive electrical structures by processing substance-sensitive photoresist material
US4644380A (en) * 1977-12-08 1987-02-17 University Of Pennsylvania Substance-sensitive electrical structures
JPS54157092A (en) * 1978-05-31 1979-12-11 Nec Corp Semiconductor integrated circuit device
JPS5850417B2 (ja) * 1979-07-31 1983-11-10 富士通株式会社 半導体装置の製造方法
US4442529A (en) * 1981-02-04 1984-04-10 At&T Bell Telephone Laboratories, Incorporated Power supply rejection characteristics of CMOS circuits
JPS6042855A (ja) * 1983-08-19 1985-03-07 Hitachi Ltd 半導体装置
US4693780A (en) * 1985-02-22 1987-09-15 Siemens Aktiengesellschaft Electrical isolation and leveling of patterned surfaces
US4908689A (en) * 1986-05-06 1990-03-13 International Business Machines Corporation Organic solder barrier
US5053850A (en) * 1988-03-14 1991-10-01 Motorola, Inc. Bonding pad for semiconductor devices
US5874782A (en) * 1995-08-24 1999-02-23 International Business Machines Corporation Wafer with elevated contact structures
JP2003078022A (ja) * 2001-09-06 2003-03-14 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3257588A (en) * 1959-04-27 1966-06-21 Rca Corp Semiconductor device enclosures
US3271201A (en) * 1962-10-30 1966-09-06 Itt Planar semiconductor devices
US3271685A (en) * 1963-06-20 1966-09-06 Westinghouse Electric Corp Multipurpose molecular electronic semiconductor device for performing amplifier and oscillator-mixer functions including degenerative feedback means

Also Published As

Publication number Publication date
SE320128B (enExample) 1970-02-02
DE1514254A1 (de) 1970-03-05
US3373323A (en) 1968-03-12
BE669821A (enExample) 1966-03-17
BE663896A (enExample) 1965-11-16
JPS4820951B1 (enExample) 1973-06-25
DK117084B (da) 1970-03-16
CH432661A (de) 1967-03-31
NL134388C (enExample) 1900-01-01
GB1111663A (en) 1968-05-01

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Legal Events

Date Code Title Description
E77 Valid patent as to the heymanns-index 1977