CH432661A - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
CH432661A
CH432661A CH662865A CH662865A CH432661A CH 432661 A CH432661 A CH 432661A CH 662865 A CH662865 A CH 662865A CH 662865 A CH662865 A CH 662865A CH 432661 A CH432661 A CH 432661A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
CH662865A
Other languages
German (de)
English (en)
Inventor
Eduard Wolfrum Guen Maximilian
Johannes Rongen Jacobus
Reinier Van Iersel Al Matthijs
Wilhelmus Moors Petru Albertus
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL6405411A external-priority patent/NL6405411A/xx
Application filed by Philips Nv filed Critical Philips Nv
Priority claimed from NL6510237A external-priority patent/NL6510237A/xx
Publication of CH432661A publication Critical patent/CH432661A/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/14Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P95/00
    • H10W20/40
    • H10W72/90
    • H10W74/43
    • H10W72/5363
    • H10W72/5522
    • H10W72/59
    • H10W72/923
    • H10W72/934
    • H10W72/952

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Bipolar Integrated Circuits (AREA)
CH662865A 1964-05-15 1965-05-12 Halbleitervorrichtung CH432661A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL6405411A NL6405411A (enExample) 1964-05-15 1964-05-15
NL6510237A NL6510237A (enExample) 1965-08-06 1965-08-06

Publications (1)

Publication Number Publication Date
CH432661A true CH432661A (de) 1967-03-31

Family

ID=26643768

Family Applications (1)

Application Number Title Priority Date Filing Date
CH662865A CH432661A (de) 1964-05-15 1965-05-12 Halbleitervorrichtung

Country Status (9)

Country Link
US (1) US3373323A (enExample)
JP (1) JPS4820951B1 (enExample)
BE (2) BE663896A (enExample)
CH (1) CH432661A (enExample)
DE (1) DE1514254B2 (enExample)
DK (1) DK117084B (enExample)
GB (1) GB1111663A (enExample)
NL (1) NL134388C (enExample)
SE (1) SE320128B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053850A (en) * 1988-03-14 1991-10-01 Motorola, Inc. Bonding pad for semiconductor devices

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6606714A (enExample) * 1966-05-17 1967-11-20
NL6609002A (enExample) * 1966-06-29 1968-01-02
DE1564705A1 (de) * 1966-09-12 1970-05-14 Siemens Ag Halbleiteranordnung mit mindestens einem in Emitterschaltung betriebenen Transistor
US3518504A (en) * 1966-11-15 1970-06-30 Int Standard Electric Corp Transistor with lead-in electrodes
NL158027B (nl) * 1967-09-12 1978-09-15 Philips Nv Gestabiliseerde planaire halfgeleiderinrichting met een hoog gedoteerde oppervlaktezone.
US3573571A (en) * 1967-10-13 1971-04-06 Gen Electric Surface-diffused transistor with isolated field plate
GB1188879A (en) * 1967-12-13 1970-04-22 Matsushita Electronics Corp Planar Transistor
DE1926989A1 (de) * 1969-05-27 1970-12-03 Beneking Prof Dr Rer Nat Heinz Hochfrequenzleitung
DE1927876C3 (de) * 1969-05-31 1979-09-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
US3697828A (en) * 1970-12-03 1972-10-10 Gen Motors Corp Geometry for a pnp silicon transistor with overlay contacts
US3763550A (en) * 1970-12-03 1973-10-09 Gen Motors Corp Geometry for a pnp silicon transistor with overlay contacts
JPS547196B2 (enExample) * 1971-08-26 1979-04-04
US4017886A (en) * 1972-10-18 1977-04-12 Hitachi, Ltd. Discrete semiconductor device having polymer resin as insulator and method for making the same
US4360823A (en) * 1977-03-16 1982-11-23 U.S. Philips Corporation Semiconductor device having an improved multilayer wiring system
US4302530A (en) * 1977-12-08 1981-11-24 University Of Pennsylvania Method for making substance-sensitive electrical structures by processing substance-sensitive photoresist material
US4644380A (en) * 1977-12-08 1987-02-17 University Of Pennsylvania Substance-sensitive electrical structures
JPS54157092A (en) * 1978-05-31 1979-12-11 Nec Corp Semiconductor integrated circuit device
JPS5850417B2 (ja) * 1979-07-31 1983-11-10 富士通株式会社 半導体装置の製造方法
US4442529A (en) * 1981-02-04 1984-04-10 At&T Bell Telephone Laboratories, Incorporated Power supply rejection characteristics of CMOS circuits
JPS6042855A (ja) * 1983-08-19 1985-03-07 Hitachi Ltd 半導体装置
US4693780A (en) * 1985-02-22 1987-09-15 Siemens Aktiengesellschaft Electrical isolation and leveling of patterned surfaces
US4908689A (en) * 1986-05-06 1990-03-13 International Business Machines Corporation Organic solder barrier
US5874782A (en) * 1995-08-24 1999-02-23 International Business Machines Corporation Wafer with elevated contact structures
JP2003078022A (ja) * 2001-09-06 2003-03-14 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3257588A (en) * 1959-04-27 1966-06-21 Rca Corp Semiconductor device enclosures
US3271201A (en) * 1962-10-30 1966-09-06 Itt Planar semiconductor devices
US3271685A (en) * 1963-06-20 1966-09-06 Westinghouse Electric Corp Multipurpose molecular electronic semiconductor device for performing amplifier and oscillator-mixer functions including degenerative feedback means

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053850A (en) * 1988-03-14 1991-10-01 Motorola, Inc. Bonding pad for semiconductor devices

Also Published As

Publication number Publication date
BE669821A (enExample) 1966-03-17
JPS4820951B1 (enExample) 1973-06-25
GB1111663A (en) 1968-05-01
DK117084B (da) 1970-03-16
DE1514254A1 (de) 1970-03-05
US3373323A (en) 1968-03-12
DE1514254B2 (de) 1971-02-25
BE663896A (enExample) 1965-11-16
SE320128B (enExample) 1970-02-02
NL134388C (enExample) 1900-01-01

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