NL6606714A - - Google Patents
Info
- Publication number
- NL6606714A NL6606714A NL6606714A NL6606714A NL6606714A NL 6606714 A NL6606714 A NL 6606714A NL 6606714 A NL6606714 A NL 6606714A NL 6606714 A NL6606714 A NL 6606714A NL 6606714 A NL6606714 A NL 6606714A
- Authority
- NL
- Netherlands
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
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- H10W20/484—
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- H10W72/90—
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- H10W72/5363—
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- H10W72/59—
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- H10W72/932—
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Element Separation (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6606714A NL6606714A (enExample) | 1966-05-17 | 1966-05-17 | |
| US635091A US3482152A (en) | 1966-05-17 | 1967-05-01 | Semiconductor devices having a field effect transistor structure |
| GB22096/67A GB1189355A (en) | 1966-05-17 | 1967-05-12 | Improvements in and relating to Semiconductor Devices |
| ES340523A ES340523A1 (es) | 1966-05-17 | 1967-05-13 | Un dispositivo semiconductor. |
| DE1614248A DE1614248C3 (de) | 1966-05-17 | 1967-05-13 | Sperrschicht-Feldeffekttransistor, Verwendung desselben in einer Schaltung zur Verstärkung elektrischer Signale und Verfahren zu seiner Herstellung |
| AT459167A AT277320B (de) | 1966-05-17 | 1967-05-16 | Halbleitervorrichtung mit einer Feldeffekttransistorstruktur |
| CH688667A CH478461A (de) | 1966-05-17 | 1967-05-16 | Feldeffekttransistor mit einem Halbleiterkörper |
| BE698544D BE698544A (enExample) | 1966-05-17 | 1967-05-16 | |
| FR106658A FR1524522A (fr) | 1966-05-17 | 1967-05-17 | Dispositif semi-conducteur renfermant une structure de transistor à effet de champ et son procédé de fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6606714A NL6606714A (enExample) | 1966-05-17 | 1966-05-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6606714A true NL6606714A (enExample) | 1967-11-20 |
Family
ID=19796621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6606714A NL6606714A (enExample) | 1966-05-17 | 1966-05-17 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3482152A (enExample) |
| AT (1) | AT277320B (enExample) |
| BE (1) | BE698544A (enExample) |
| CH (1) | CH478461A (enExample) |
| DE (1) | DE1614248C3 (enExample) |
| ES (1) | ES340523A1 (enExample) |
| GB (1) | GB1189355A (enExample) |
| NL (1) | NL6606714A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108628038A (zh) * | 2018-06-28 | 2018-10-09 | 京东方科技集团股份有限公司 | 发光晶体管及其发光方法、阵列基板和显示装置 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4063271A (en) * | 1972-07-26 | 1977-12-13 | Texas Instruments Incorporated | FET and bipolar device and circuit process with maximum junction control |
| JPS54157092A (en) * | 1978-05-31 | 1979-12-11 | Nec Corp | Semiconductor integrated circuit device |
| US4376983A (en) * | 1980-03-21 | 1983-03-15 | Texas Instruments Incorporated | High density dynamic memory cell |
| US4888562A (en) * | 1987-09-09 | 1989-12-19 | National Semiconductor Corporation | Low noise, high speed current or voltage amplifier |
| US5027082A (en) * | 1990-05-01 | 1991-06-25 | Microwave Modules & Devices, Inc. | Solid state RF power amplifier having improved efficiency and reduced distortion |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL134388C (enExample) * | 1964-05-15 | 1900-01-01 | ||
| US3414740A (en) * | 1965-09-08 | 1968-12-03 | Ibm | Integrated insulated gate field effect logic circuitry |
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1966
- 1966-05-17 NL NL6606714A patent/NL6606714A/xx unknown
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1967
- 1967-05-01 US US635091A patent/US3482152A/en not_active Expired - Lifetime
- 1967-05-12 GB GB22096/67A patent/GB1189355A/en not_active Expired
- 1967-05-13 ES ES340523A patent/ES340523A1/es not_active Expired
- 1967-05-13 DE DE1614248A patent/DE1614248C3/de not_active Expired
- 1967-05-16 AT AT459167A patent/AT277320B/de not_active IP Right Cessation
- 1967-05-16 CH CH688667A patent/CH478461A/de not_active IP Right Cessation
- 1967-05-16 BE BE698544D patent/BE698544A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108628038A (zh) * | 2018-06-28 | 2018-10-09 | 京东方科技集团股份有限公司 | 发光晶体管及其发光方法、阵列基板和显示装置 |
| CN108628038B (zh) * | 2018-06-28 | 2021-02-26 | 京东方科技集团股份有限公司 | 发光晶体管及其发光方法、阵列基板和显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1189355A (en) | 1970-04-22 |
| ES340523A1 (es) | 1968-07-01 |
| DE1614248A1 (de) | 1970-05-27 |
| BE698544A (enExample) | 1967-11-16 |
| AT277320B (de) | 1969-12-29 |
| CH478461A (de) | 1969-09-15 |
| DE1614248C3 (de) | 1979-12-06 |
| US3482152A (en) | 1969-12-02 |
| DE1614248B2 (de) | 1979-04-05 |