DE1446211A1 - Verfahren zum Herstellen von Halbleiterkoerpern - Google Patents
Verfahren zum Herstellen von HalbleiterkoerpernInfo
- Publication number
- DE1446211A1 DE1446211A1 DE19601446211 DE1446211A DE1446211A1 DE 1446211 A1 DE1446211 A1 DE 1446211A1 DE 19601446211 DE19601446211 DE 19601446211 DE 1446211 A DE1446211 A DE 1446211A DE 1446211 A1 DE1446211 A1 DE 1446211A1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing semiconductor
- semiconductor bodies
- der
- bath original
- bath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000463 material Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 2
- 235000016068 Berberis vulgaris Nutrition 0.000 description 1
- 241000335053 Beta vulgaris Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/059—Germanium on silicon or Ge-Si on III-V
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/074—Horizontal melt solidification
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/936—Graded energy gap
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Exhaust Gas After Treatment (AREA)
- Catalysts (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL239785 | 1959-06-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1446211A1 true DE1446211A1 (de) | 1969-02-06 |
Family
ID=19751761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19601446211 Pending DE1446211A1 (de) | 1959-06-02 | 1960-05-30 | Verfahren zum Herstellen von Halbleiterkoerpern |
Country Status (3)
Country | Link |
---|---|
US (1) | US3102828A (US07413550-20080819-C00001.png) |
DE (1) | DE1446211A1 (US07413550-20080819-C00001.png) |
NL (1) | NL239785A (US07413550-20080819-C00001.png) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL281602A (US07413550-20080819-C00001.png) * | 1959-06-18 | |||
NL277300A (US07413550-20080819-C00001.png) * | 1961-04-20 | |||
US3275906A (en) * | 1962-08-20 | 1966-09-27 | Nippon Electric Co | Multiple hetero-layer composite semiconductor device |
US3271179A (en) * | 1962-09-24 | 1966-09-06 | Temescal Metallurgical Corp | Method for the manufacture of an optical filter |
DE1298512B (de) * | 1964-03-13 | 1969-07-03 | Telefunken Patent | Einrichtung zum Aufdampfen einkristalliner Schichten auf Unterlagen |
US3338760A (en) * | 1964-06-03 | 1967-08-29 | Massachusetts Inst Technology | Method of making a heterojunction semiconductor device |
US3428474A (en) * | 1964-06-24 | 1969-02-18 | Bausch & Lomb | Method for forming ceramic metallic bonds |
US3458368A (en) * | 1966-05-23 | 1969-07-29 | Texas Instruments Inc | Integrated circuits and fabrication thereof |
NL6615059A (US07413550-20080819-C00001.png) * | 1966-10-25 | 1968-04-26 | ||
US3766447A (en) * | 1971-10-20 | 1973-10-16 | Harris Intertype Corp | Heteroepitaxial structure |
DE2607911A1 (de) * | 1976-02-26 | 1977-09-01 | Siemens Ag | Verfahren zur reinigung eines germaniumkoerpers |
US4357183A (en) * | 1980-08-13 | 1982-11-02 | Massachusetts Institute Of Technology | Heteroepitaxy of germanium silicon on silicon utilizing alloying control |
US4861393A (en) * | 1983-10-28 | 1989-08-29 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semiconductor heterostructures having Gex Si1-x layers on Si utilizing molecular beam epitaxy |
ATE199043T1 (de) * | 1994-05-06 | 2001-02-15 | Nestle Sa | System zum dosieren von pulverförmigen stoffen |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB742239A (en) * | 1951-10-24 | 1955-12-21 | Ass Elect Ind | Improvements in barrier layer cells |
NL168491B (US07413550-20080819-C00001.png) * | 1951-11-16 | Roussel-Uclaf, Societe Anonyme Te Parijs. | ||
DE966848C (de) * | 1952-07-29 | 1957-08-29 | Licentia Gmbh | Verfahren zum Herstellen von scharf abgegrenzten Schichten entgegengesetzten Leitfaehigkeitstyps auf einem fertigen Halbleiterkristall eines bestimmten Leitfaehigkeitstyps |
NL180750B (nl) * | 1952-08-20 | Bristol Myers Co | Werkwijze voor het bereiden van een 7-amino-3-cefem-4-carbonzuur derivaat door een 7-acylamino-3-cefem-4-carbonzuur derivaat om te zetten. | |
DE1240188B (de) * | 1954-10-29 | 1967-05-11 | Telefunken Patent | Verfahren zum Herstellen von Halbleiterbauelementen mit einem oder mehreren einlegierten p-n-UEbergaengen |
GB805493A (en) * | 1955-04-07 | 1958-12-10 | Telefunken Gmbh | Improved method for the production of semi-conductor devices of npn or pnp type |
US2855334A (en) * | 1955-08-17 | 1958-10-07 | Sprague Electric Co | Method of preparing semiconducting crystals having symmetrical junctions |
-
0
- NL NL239785D patent/NL239785A/xx unknown
-
1960
- 1960-05-30 DE DE19601446211 patent/DE1446211A1/de active Pending
- 1960-06-01 US US33291A patent/US3102828A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
NL239785A (US07413550-20080819-C00001.png) | |
US3102828A (en) | 1963-09-03 |
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